Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF1570N
Rev. 10, 6/2009
RF Power Field Effect Transistors
MRF1570NT1
MRF1570FNT1
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment.
• Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 11.5 dB
Efficiency — 60%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
400 - 470 MHz
• Broadband Demonstration Amplifier Information Available Upon Request
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
470 MHz, 70 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366 - 05, STYLE 1
TO - 272 - 8 WRAP
PLASTIC
MRF1570NT1
CASE 1366A - 03, STYLE 1
TO - 272 - 8
PLASTIC
MRF1570FNT1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
+0.5, +40
Vdc
Gate - Source Voltage
VGS
± 20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
165
0.5
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
0.29
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
1
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IDSS
—
—
1
μA
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 0.8 mAdc)
VGS(th)
1
—
3
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
—
—
1
Vdc
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Ciss
—
—
500
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss
—
—
250
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Crss
—
—
35
pF
Gps
—
11.5
—
dB
η
—
60
—
%
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics
RF Characteristics (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA)
f = 470 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA)
f = 470 MHz
MRF1570NT1 MRF1570FNT1
2
RF Device Data
Freescale Semiconductor
B1
VGG
C14
C13
C12
B3
+
C11
C10
C38
R1
Z2
RF
INPUT
C1 Z1
C2
L1
Z4
C4
L3
Z6
R3
Z8
C8
C36
Z12
L9
Z14
Z16
C20
C22
C24
Z10
C6
B4
C37
L5
C26
C35
L7
Z22
C21
Z5
C5
L4
Z7
C23
C25
C27
Z9
Z11
Z13
Z15
B2
C19
C18
C17
Z17
L6
C32
+
C16
L8
Z19
C29
L10
R2
VGG
C30
RF
OUTPUT
Z21
C9
C7
Z18
Z20
R4
L2
+ VDD
C33
C28
DUT
C3
Z3
C34
C31
B5
C15
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products
C1, C32, C37, C43
270 pF, 100 mil Chip Capacitors
C2, C20, C21
33 pF, 100 mil Chip Capacitors
C3
18 pF, 100 mil Chip Capacitor
C4, C5
30 pF, 100 mil Chip Capacitors
C6, C7
180 pF, 100 mil Chip Capacitors
C8, C9
150 pF, 100 mil Chip Capacitors
C10, C15
300 pF, 100 mil Chip Capacitors
C11, C16, C33, C39
10 μF, 50 V Electrolytic Capacitors
C12, C17, C34, C40 0.1 μF, 100 mil Chip Capacitors
C13, C18, C35, C41 1000 pF, 100 mil Chip Capacitors
C14, C19, C36, C42 470 pF, 100 mil Chip Capacitors
C22, C23
110 pF, 100 mil Chip Capacitors
C24, C25
68 pF, 100 mil Chip Capacitors
C26, C27
120 pF, 100 mil Chip Capacitors
C28, C29
24 pF, 100 mil Chip Capacitors
C30, C31
27 pF, 100 mil Chip Capacitors
C38, C44
240 pF, 100 mil Chip Capacitors
L1, L2
17.5 nH, 6 Turn Inductors, Coilcraft
C44
C43
L3, L4
L5, L6, L7, L8
L9, L10
N1, N2
R1, R2
R3, R4
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9, Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22
Board
B6
C42
C41
C40
+ VDD
C39
5 nH, 2 Turn Inductors, Coilcraft
1 Turn, #18 AWG, 0.33″ ID Inductors
3 Turn, #16 AWG, 0.165″ ID Inductors
Type N Flange Mounts
25.5 Ω Chip Resistors (1206)
9.3 Ω Chip Resistors (1206)
0.32″ x 0.080″ Microstrip
0.46″ x 0.080″ Microstrip
0.34″ x 0.080″ Microstrip
0.45″ x 0.080″ Microstrip
0.28″ x 0.240″ Microstrip
0.39″ x 0.080″ Microstrip
0.27″ x 0.080″ Microstrip
0.25″ x 0.080″ Microstrip
0.29″ x 0.080″ Microstrip
0.14″ x 0.080″ Microstrip
0.32″ x 0.080″ Microstrip
31 mil Glass Teflon®
Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic
MRF1570NT1 MRF1570FNT1
RF Device Data
Freescale Semiconductor
3
VDD
VGG
C11
B3
B4
B1
GND
C6
C1
C10
L1
C4
C3
C5
L5
C8
R3
R4
C9
L4
L2
C7
C17 C18 C19
C28 C36 C35 C34
C20 C24
R1
L3
C2
GND
C37
C38
C12 C13 C14
C33
L9
L7
C30
C26
C22
C23
C31
C27
L10
R2
C15
C32
L8
L6
C29 C42 C41 C40
C21 C25
C44
C43
B5
B6
B2
C16
C39
MRF1570T1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout
TYPICAL CHARACTERISTICS, 135 - 175 MHz
0
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
100
80
135 MHz
60
175 MHz
40
150 MHz
20
−5
135 MHz
−10
175 MHz
155 MHz
−15
VDD = 12.5 Vdc
VDD = 12.5 Vdc
0
−20
0
1
2
3
4
5
6
10
20
30
40
50
60
70
80
90
Pin, INPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
Figure 4. Input Return Loss versus Output Power
MRF1570NT1 MRF1570FNT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS, 135 - 175 MHz
18
70
155 MHz
VDD = 12.5 Vdc
G ps , POWER GAIN (dB)
η, DRAIN EFFICIENCY (%)
155 MHz
17
175 MHz
135 MHz
16
15
14
13
60
175 MHz
50
135 MHz
40
30
VDD = 12.5 Vdc
12
10
20
30
40
50
60
70
80
20
10
90
30
50
60
70
80
90
Figure 5. Gain versus Output Power
Figure 6. Drain Efficiency versus Output Power
η, DRAIN EFFICIENCY (%)
100
135 MHz
80
175 MHz
155 MHz
70
60
600
800
1000
1200
1400
80
155 MHz
60
175 MHz
135 MHz
40
20
VDD = 12.5 Vdc
Pin = 36 dBm
50
400
VDD = 12.5 Vdc
Pin = 36 dBm
0
400
1600
600
800
1000
1200
1400
1600
IDQ, BIASING CURRENT (mA)
IDQ, BIASING CURRENT (mA)
Figure 7. Output Power versus Biasing Current
Figure 8. Drain Efficiency versus Biasing Current
100
100
80
η, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
40
Pout, OUTPUT POWER (WATTS)
90
Pout , OUTPUT POWER (WATTS)
20
Pout, OUTPUT POWER (WATTS)
135 MHz
175 MHz
155 MHz
60
40
20
Pin = 36 dBm
IDQ = 800 mA
0
10
155 MHz
80
175 MHz
135 MHz
60
40
20
Pin = 36 dBm
IDQ = 800 mA
0
11
12
13
14
15
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (VOLTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
Figure 10. Drain Efficiency versus Supply Voltage
MRF1570NT1 MRF1570FNT1
RF Device Data
Freescale Semiconductor
5
B1
VGG
C14
C13
C12
+
B3
C11
C10
C9
R1
Z3
R3
RF
INPUT
Z1
Z5
Z7
Z9
C2
Z11
C21
DUT
C5
Z2
C36
C35
C34
+ VDD
C33
L3
Z17
L5
C7
C1
B4
C37
Z13
C23
Z15
L1
C25
C27
Z19
C3
C22
C4
C24
C31
C29
RF
OUTPUT
C32
R4
Z4
Z6
C6
R2
Z8
Z10
Z12
C8
C20
C19
C18
+
C17
Z16
L2
C26
L4
Z18
C28
C30
L6
B2
VGG
Z14
B5
C16
C15
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products
C1, C9, C15, C32
270 pF, 100 mil Chip Capacitors
C2, C3
7.5 pF, 100 mil Chip Capacitors
C4
5.1 pF, 100 mil Chip Capacitor
C5, C6
180 pF, 100 mil Chip Capacitors
C7, C8
47 pF, 100 mil Chip Capacitors
C10, C16, C37, C42 120 pF, 100 mil Chip Capacitors
C11, C17, C33, C38
10 μF, 50 V Electrolytic Capacitors
C12, C18, C34, C39 470 pF, 100 mil Chip Capacitors
C13, C19, C35, C40 1200 pF, 100 mil Chip Capacitors
C14, C20, C36, C41 0.1 μF, 100 mil Chip Capacitors
C21, C22
33 pF, 100 mil Chip Capacitors
C23, C24
27 pF, 100 mil Chip Capacitors
C25, C26
15 pF, 100 mil Chip Capacitors
C27, C28
2.2 pF, 100 mil Chip Capacitors
C29, C30
6.2 pF, 100 mil Chip Capacitors
C31
1.0 pF, 100 mil Chip Capacitor
C42
L1, L2, L3, L4
L5, L6
N1, N2
R1, R2
R3, R4
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19
Board
B6
C41
C40
C39
+ VDD
C38
1 Turn, #18 AWG, 0.085″ ID Inductors
2 Turn, #16 AWG, 0.165″ ID Inductors
Type N Flange Mounts
25.5 Ω Chip Resistors (1206)
10 Ω Chip Resistors (1206)
0.240″ x 0.080″ Microstrip
0.185″ x 0.080″ Microstrip
1.500″ x 0.080″ Microstrip
0.150″ x 0.240″ Microstrip
0.140″ x 0.240″ Microstrip
0.140″ x 0.240″ Microstrip
0.150″ x 0.240″ Microstrip
0.270″ x 0.080″ Microstrip
0.680″ x 0.080″ Microstrip
0.320″ x 0.080″ Microstrip
0.380″ x 0.080″ Microstrip
31 mil Glass Teflon®
Figure 11. 400 - 470 MHz Broadband Test Circuit Schematic
MRF1570NT1 MRF1570FNT1
6
RF Device Data
Freescale Semiconductor
VDD
VGG
C11
GND
B3
B4
C10
B1
C33
GND
C37
C12 C13 C14
C1
C9
C5
R1
C2
C4
C3
R2
C7
R3
R4
C8
C21 C23
L5
L1
C25
C26
C22 C24
C6
C31
L2
L6
C32
C30
L4
C15
C18 C19 C20
C27 C34 C35 C36
L3
C29
C28 C39 C40 C41
C42
B2
B5
B6
C16
C17
C38
MRF1570T1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 12. 400 - 470 MHz Broadband Test Circuit Component Layout
TYPICAL CHARACTERISTICS, 400 - 470 MHz
0
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
100
80
400 MHz
60
440 MHz
470 MHz
40
20
VDD = 12.5 Vdc
−5
−10
440 MHz
−15
400 MHz
VDD = 12.5 Vdc
470 MHz
0
−20
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
Pin, INPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 13. Output Power versus Input Power
Figure 14. Input Return Loss versus Output Power
MRF1570NT1 MRF1570FNT1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS, 400 - 470 MHz
17
70
15
60
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
400 MHz
440 MHz
13
470 MHz
11
9
7
470 MHz
400 MHz
50
440 MHz
40
30
20
10
VDD = 12.5 Vdc
VDD = 12.5 Vdc
5
0
0
10
20
30
40
50
60
80
70
0
10
20
Pout, OUTPUT POWER (WATTS)
Figure 15. Gain versus Output Power
40
50
60
70
80
Figure 16. Drain Efficiency versus Output Power
80
η, DRAIN EFFICIENCY (%)
100
Pout , OUTPUT POWER (WATTS)
90
470 MHz
440 MHz
400 MHz
70
60
VDD = 12.5 Vdc
Pin = 38 dBm
50
400
600
800
1000
1200
1400
80
470 MHz
400 MHz
60
440 MHz
40
20
VDD = 12.5 Vdc
Pin = 38 dBm
0
400
1600
600
800
IDQ, BIASING CURRENT (mA)
1000
1200
1400
1600
IDQ, BIASING CURRENT (mA)
Figure 17. Output Power versus Biasing Current
Figure 18. Drain Efficiency versus Biasing Current
100
100
400 MHz
90
η, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
30
Pout, OUTPUT POWER (WATTS)
470 MHz
80
440 MHz
70
60
Pin = 38 dBm
IDQ = 800 mA
50
40
10
11
12
13
14
80
400 MHz
60
440 MHz
470 MHz
40
Pin = 38 dBm
IDQ = 800 mA
20
15
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 19. Output Power versus Supply Voltage
0
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 20. Drain Efficiency versus Supply Voltage
MRF1570NT1 MRF1570FNT1
8
RF Device Data
Freescale Semiconductor
B1
VGG
C13
C12
C11
+
B3
C10
C9
C8
R1
Z2
Z4
RF
INPUT
R3
Z6
Z8
Z10
C6
C4
Z1
Z12
C20
DUT
C31
C30
+ VDD
C29
Z14
Z16
L1
Z18
C24
C22
Z20
C21
R4
Z3
Z5
Z7
C5
R2
C3
Z9
Z11
C18
C17
+
C16
C23
Z13
C26
RF
OUTPUT
C28
Z15
C7
Z17
L2
Z19
C25
C27
L4
B2
VGG
C19
C32
L3
C2
C1
B4
C33
B5
C15
C14
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products
C1, C8, C14, C28
270 pF, 100 mil Chip Capacitors
C2, C3
10 pF, 100 mil Chip Capacitors
C4, C5
180 pF, 100 mil Chip Capacitors
C6, C7
47 pF, 100 mil Chip Capacitors
C9, C15, C33, C38
120 pF, 100 mil Chip Capacitors
C10, C16, C29, C34 10 μF, 50 V Electrolytic Capacitors
C11, C17, C30, C35
470 pF, 100 mil Chip Capacitors
C12, C18, C31, C36 1200 pF, 100 mil Chip Capacitors
C13, C19, C32, C37 0.1 μF, 100 mil Chip Capacitors
C20, C21
22 pF, 100 mil Chip Capacitors
C22, C23
20 pF, 100 mil Chip Capacitors
C24, C25, C26, C27 5.1 pF, 100 mil Chip Capacitors
L1, L2
1 Turn, #18 AWG, 0.115″ ID Inductors
L3, L4
2 Turn, #16 AWG, 0.165″ ID Inductors
C38
B6
N1, N2
R1, R2
R3, R4
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20
Board
C37
C36
C35
+ VDD
C34
Type N Flange Mounts
1.0 kΩ Chip Resistors (1206)
10 Ω Chip Resistors (1206)
0.40″ x 0.080″ Microstrip
0.26″ x 0.080″ Microstrip
1.35″ x 0.080″ Microstrip
0.17″ x 0.240″ Microstrip
0.12″ x 0.240″ Microstrip
0.14″ x 0.240″ Microstrip
0.15″ x 0.240″ Microstrip
0.18″ x 0.172″ Microstrip
1.23″ x 0.080″ Microstrip
0.12″ x 0.080″ Microstrip
0.40″ x 0.080″ Microstrip
31 mil Glass Teflon®
Figure 21. 450 - 520 MHz Broadband Test Circuit Schematic
MRF1570NT1 MRF1570FNT1
RF Device Data
Freescale Semiconductor
9
VDD
VGG
C10
B1
GND
C29
B3
B4
GND
C33
C9
C13 C12 C11
C8
C4
R1
C2
C1
C3
R2
C30 C31 C32
L1
C6
R3
R4
C7
C24
C20 C22 L3
C28
C21 C23 L4
C19 C18 C17
C27
C25
C5
C14
C26
L2
C35 C36 C37
C15
C38
B5
B6
B2
C16
C34
MRF1570T1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 22. 450 - 520 MHz Broadband Test Circuit Component Layout
TYPICAL CHARACTERISTICS, 450 - 520 MHz
0
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
100
80
470 MHz
60
450 MHz
500 MHz
40
520 MHz
20
−5
−10
470 MHz
500 MHz
−15
450 MHz
520 MHz
−20
VDD = 12.5 Vdc
VDD = 12.5 Vdc
0
−25
0
1
2
3
4
5
6
7
Pin, INPUT POWER (WATTS)
Figure 23. Output Power versus Input Power
8
0
10
20
30
40
50
60
70
80
90
Pout, OUTPUT POWER (WATTS)
Figure 24. Input Return Loss versus Output Power
MRF1570NT1 MRF1570FNT1
10
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS, 450 - 520 MHz
15
70
450 MHz
470 MHz
500 MHz
13
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
14
520 MHz
12
11
10
60
520 MHz
500 MHz
450 MHz
50
470 MHz
40
30
VDD = 12.5 Vdc
VDD = 12.5 Vdc
9
0
10
20
30
40
50
60
70
80
20
10
90
20
30
Pout, OUTPUT POWER (WATTS)
Figure 25. Gain versus Output Power
60
70
80
90
80
80
η, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
50
Figure 26. Drain Efficiency versus Output Power
90
450 MHz
470 MHz
500 MHz
70
520 MHz
60
70
520 MHz
500 MHz
60
470 MHz
50
450 MHz
VDD = 12.5 Vdc
Pin = 38 dBm
VDD = 12.5 Vdc
Pin = 38 dBm
50
400
800
1200
1600
40
400
800
IDQ, BIASING CURRENT (mA)
1200
1600
IDQ, BIASING CURRENT (mA)
Figure 27. Output Power versus Biasing Current
Figure 28. Drain Efficiency versus Biasing Current
80
100
90
η, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
40
Pout, OUTPUT POWER (WATTS)
80
70
450 MHz
470 MHz
500 MHz
520 MHz
60
50
70
520 MHz
500 MHz
60
470 MHz
450 MHz
50
Pin = 38 dBm
IDQ = 800 mA
40
30
10
11
12
13
14
Pin = 38 dBm
IDQ = 800 mA
15
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 29. Output Power versus Supply Voltage
40
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 30. Drain Efficiency versus Supply Voltage
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TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
1011
1010
109
108
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 31. MTTF Factor versus Junction Temperature
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ZOL*
f = 135 MHz
f = 175 MHz
f = 135 MHz
Zin
Zo = 5 Ω
f = 175 MHz
f = 400 MHz
f = 470 MHz
Zo = 5 Ω
Zin
f = 520 MHz
ZOL*
f = 400 MHz
f = 450 MHz
f = 450 MHz
ZOL*
Zin
f = 470 MHz
f = 520 MHz
VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W
VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W
VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
135
2.8 +j0.05
0.65 +j0.42
400
0.92 - j0.71
1.05 - j1.10
450
0.94 - j1.12
0.61 - j1.14
155
3.9 +j0.34
1.01 +j0.63
440
1.12 - j1.11
0.83 - j1.45
470
1.03 - j1.17
0.62 - j1.12
175
2.4 - j0.47
0.71 +j0.37
470
0.82 - j0.79
0.59 - j1.43
500
0.95 - j1.71
0.75 - j1.03
520
0.62 - j1.74
0.77 - j0.97
Zin
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
Notes:
Impedance Zin was measured with input terminated at 50 W.
Impedance ZOL was measured with output terminated at 50 W.
Input
Matching
Network
Output
Matching
Network
Device
Under Test
Z
in
Z
*
OL
Figure 32. Series Equivalent Input and Output Impedance
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APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common - source, RF power, N - Channel
enhancement mode, Lateral Metal - Oxide Semiconductor
Field - Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate - to - drain (Cgd), and
gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
Drain
Cgd
Gate
Cds
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
Cgs
Source
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full - on condition. This on - resistance, RDS(on), occurs
in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The
drain - source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate - to - source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can
result in turn - on of the devices due to voltage build - up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate - to - source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate - drain capacitance. If the
gate - to - source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate - threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 800 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MRF1570NT1 MRF1570FNT1
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RF Device Data
Freescale Semiconductor
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large - signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. See
Freescale Application Note AN215A, “RF Small - Signal
Design Using Two - Port Parameters” for a discussion of two
port network theory and stability.
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN211A: Field Effect Transistors in Theory and Practice
• AN215A: RF Small - Signal Design Using Two - Port Parameters
• AN721: Impedance Matching Networks Applied to RF Power Transistors
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
• AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
9
June 2008
Description
• Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance
values in the functional test table on p. 2
• Replaced Case Outline 1366 - 04 with 1366 - 05, Issue E, p. 1, 16 - 18. Removed Drain - ID label from View
Y - Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min,
respectively.
• Replaced Case Outline 1366A - 02 with 1366A - 03, Issue D, p. 1, 19 - 21. Removed Drain - ID label from View
Y - Y. Removed Surface Alignment tolerance label for cross hatched section on View Y - Y. Added Pin 9
designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. Added
dimension E3. Restored dimensions F and P designators to DIM column on Sheet 3.
• Added Product Documentation and Revision History, p. 22
10
June 2009
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to
Product Documentation, Application Notes, p. 22
• Added Electromigration MTTF Calculator availability to Product Software, p. 22
MRF1570NT1 MRF1570FNT1
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RF Device Data
Freescale Semiconductor
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MRF1570NT1 MRF1570FNT1
Document
Number:
RF
Device
Data MRF1570N
Rev. 10, 6/2009
Freescale
Semiconductor
23