IPB60R125CP Data Sheet (357 KB, EN)

IPB60R125CP
CoolMOSTM Power Transistor
Product Summary
Features
V DS @ Tj,max
• Lowest figure-of-merit R ONxQg
650
0.125 Ω
R DS(on),max
• Ultra low gate charge
V
Q g,typ
53
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO263
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
Package
IPB60R125CP
Ordering Code
PG-TO263
Marking
SP000088488
6R125P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
25
T C=100 °C
16
Pulsed drain current2)
I D,pulse
T C=25 °C
82
Avalanche energy, single pulse
E AS
I D=11 A, V DD=50 V
708
Avalanche energy, repetitive t AR2),3)
E AR
I D=11 A, V DD=50 V
1.2
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev. 1.0
Unit
A
mJ
11
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
208
W
-55 ... 150
°C
page 1
2007-02-06
IPB60R125CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
16
T C=25 °C
A
82
15
V/ns
Values
Unit
min.
typ.
max.
-
-
0.6
SMD version, device
on PCB, minimal
footprint
-
-
62
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
35
-
reflow MSL1
-
-
260
°C
V
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance, junction ambient
Soldering temperature,
wave- & reflowsoldering allowed
T sold
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=1.1 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
2
V DS=600 V, V GS=0 V,
T j=150 °C
-
20
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=16 A,
T j=25 °C
-
0.11
0.125
Ω
V GS=10 V, I D=16 A,
T j=150 °C
-
0.30
-
f =1 MHz, open drain
-
2.1
-
Gate resistance
Rev. 1.0
RG
page 2
Ω
2007-02-06
IPB60R125CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2500
-
-
120
-
-
110
-
-
300
-
-
15
-
-
5
-
-
50
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related6)
Effective output capacitance, time
related7)
C o(er)
C o(tr)
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
pF
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
12
-
Gate to drain charge
Q gd
-
18
-
Gate charge total
Qg
-
53
70
Gate plateau voltage
V plateau
-
5.0
-
V
-
0.9
1.2
V
-
430
-
ns
-
9
-
µC
-
42
-
A
V DD=400 V,
V GS=10 V, I D=16 A,
R G=3.3 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=16 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=16 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air
6)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.0
page 3
2007-02-06
IPB60R125CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
250
102
limited by on-state
resistance
1 µs
10 µs
200
100 µs
1 ms
101
10 ms
DC
I D [A]
P tot [W]
150
100
100
50
10-1
0
0
40
80
120
100
160
101
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z thJC=f(t P)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
120
100
105
20 V
8V
75
0.2
10-1
10 V
90
7V
I D [A]
Z thJC [K/W]
0.5
0.1
60
6V
0.05
45
0.02
5.5 V
30
0.01
5V
15
4.5 V
single pulse
10-2
10-5
0
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 1.0
0
5
10
15
20
V DS [V]
page 4
2007-02-06
IPB60R125CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
50
0.5
8V
6V
7V
7V
10 V
40
6.5 V
5.5 V
5V
20 V
6V
0.4
20 V
5.5 V
R DS(on) [Ω]
I D [A]
30
5V
20
0.3
0.2
4.5 V
10
0.1
0
0
0
5
10
15
20
0
10
20
30
40
50
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=16 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
0.4
120
C °25
0.3
I D [A]
R DS(on) [Ω]
80
0.2
C °150
98 %
40
typ
0.1
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
0
2
4
6
8
10
V GS [V]
page 5
2007-02-06
IPB60R125CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=16 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
25 °C, 98%
9
150 °C, 98%
8
120 V
25 °C
400 V
150 °C
7
101
I F [A]
V GS [V]
6
5
4
100
3
2
1
10-1
0
0
10
20
30
40
50
0
60
0.5
1
Q gate [nC]
1.5
12 Drain-source breakdown voltage
E AS=f(T j); I D=11 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
800
700
600
660
V BR(DSS) [V]
E AS [mJ]
11 Avalanche energy
400
200
620
580
0
540
20
60
100
140
180
T j [°C]
Rev. 1.0
2
V SD [V]
-60
-20
20
60
100
140
180
T j [°C]
page 6
2007-02-06
IPB60R125CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
20
104
16
Ciss
103
C [pF]
E oss [µJ]
12
102
8
Coss
101
4
Crss
100
0
0
100
200
300
400
500
Rev. 1.0
0
100
200
300
400
500
600
V DS [V]
V DS [V]
page 7
2007-02-06
IPB60R125CP
Definition of diode switching characteristics
Rev. 1.0
page 8
2007-02-06
IPB60R125CP
PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines
Dimensions in mm/inches:
Rev. 1.0
page 9
2007-02-06
IPB60R125CP
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 1.0
page 10
2007-02-06