INFINEON IPP60R165CP

IPP60R165CP
CoolMOSTM Power Transistor
Product Summary
Features
V DS @ Tj,max
• Lowest figure-of-merit R ONxQg
650
0.165 Ω
R DS(on),max
• Ultra low gate charge
V
Q g,typ
39
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
PG-TO220
CoolMOS CP is specially designed for:
• Hard switching topologies for Server and Telecom
Type
Package
IPP60R165CP
PG-TO220
Ordering Code
SP000084279
Marking
6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
21
T C=100 °C
13
Pulsed drain current2)
I D,pulse
T C=25 °C
61
Avalanche energy, single pulse
E AS
I D=7.9 A, V DD=50 V
522
Avalanche energy, repetitive t AR2),3)
E AR
I D=7.9 A, V DD=50 V
0.79
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Mounting torque
Rev. 2.0
Unit
A
mJ
7.9
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
192
W
-55 ... 150
°C
M3 and M3.5 screws
page 1
60
Ncm
2006-06-19
IPP60R165CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
12
T C=25 °C
A
61
15
V/ns
Values
Unit
min.
typ.
max.
-
-
0.65
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
V
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.79 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
10
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=12 A,
T j=25 °C
-
0.15
0.165
Ω
V GS=10 V, I D=12 A,
T j=150 °C
-
0.40
-
f =1 MHz, open drain
-
1.9
-
Gate resistance
Rev. 2.0
RG
page 2
Ω
2006-06-19
IPP60R165CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2000
-
-
100
-
-
83
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related4)
C o(er)
Effective output capacitance, time
related5)
C o(tr)
-
220
-
Turn-on delay time
t d(on)
-
12
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
50
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
9
-
Gate to drain charge
Q gd
-
13.0
-
Gate charge total
Qg
-
39
52
Gate plateau voltage
V plateau
-
5.0
-
V
-
0.9
1.2
V
-
390
-
ns
-
7.5
-
µC
-
38
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=12 A,
R G=3.3 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=12 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=12 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD=ID, di/dt<=200A/µs,VDClink=400V, Vpeak>V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
4)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2006-06-19
IPP60R165CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
200
limited by on-state
resistance
10 µs
1 µs
100 µs
150
101
I D [A]
P tot [W]
1 ms
100
DC
10 ms
100
50
10-1
0
0
40
80
120
100
160
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
ZthJC=f(tp)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
100
80
10V
12 V
20 V
0.5
60
0.2
10-1
I D [A]
Z thJC [K/W]
8V
0.1
40
6V
0.05
0.02
5.5 V
20
0.01
5V
single pulse
4.5 V
10-2
10-5
0
10-4
10-3
10-2
10-1
100
Rev. 2.0
0
5
10
15
20
25
V DS [V]
t p [s]
page 4
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IPP60R165CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
40
1.2
20 V
10 V
8V
12 V
6.5 V
6V
1
5.5 V
30
6V
5V
R DS(on) [Ω]
I D [A]
10 V
0.8
5.5 V
20
5V
7V
0.6
0.4
4.5 V
10
0.2
0
0
0
5
10
15
20
25
0
10
20
30
40
50
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=12 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
0.5
100
0.4
80
0.3
60
98%
0.2
40
typ
C °150
20
0.1
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.0
C °25
I D [A]
R DS(on) [Ω]
parameter: T j
0
2
4
6
8
10
V GS [V]
page 5
2006-06-19
IPP60R165CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=12 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
25 °C, 98%
8
150 °C, 98%
120 V
25 °C
150 °C
101
400 V
I F [A]
V GS [V]
6
4
100
2
10-1
0
0
10
20
30
0
40
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=7.9 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
600
700
660
E AS [mJ]
V BR(DSS) [V]
400
620
200
580
0
540
20
60
100
140
180
T j [°C]
Rev. 2.0
-60
-20
20
60
100
140
180
T j [°C]
page 6
2006-06-19
IPP60R165CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
14
12
104
10
Ciss
C [pF]
E oss [µJ]
103
Coss
102
8
6
4
10
1
2
Crss
100
0
0
100
200
300
400
500
Rev. 2.0
0
100
200
300
400
500
600
V DS [V]
V DS [V]
page 7
2006-06-19
IPP60R165CP
Definition of diode switching characteristics
Rev. 2.0
page 8
2006-06-19
IPP60R165CP
PG-TO220-3-1/TO-220-3-21: Outlines
Dimensions in mm/inches
Rev. 2.0
page 9
2006-06-19
IPP60R165CP
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 2.0
page 10
2006-06-19