NDBA100N10B Power MOSFET 100V, 6.9mΩ, 100A, N-Channel www.onsemi.com Features • Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Avalanche Tested • Pb-Free, Halogen Free and RoHS Compliance VDSS RDS(on) Max 6.9 mΩ@15V 100V N-Channel Absolute Maximum Ratings at Ta = 25°C Parameter Symbol 2, 4 Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 100 A IDP 400 A PD 110 W 175 °C −55 to +175 °C PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Junction Temperature Tj Storage Temperature Tstg Source Current (Body Diode) IS 100 A Avalanche Energy (Single Pulse) *1 EAS 147 mJ TL 260 °C Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 Marking 4 100N10 1 2 B 3 LOT No. TO-263 CASE 418AJ Packing Type : TL Thermal Resistance Ratings Parameter Symbol Value Junction to Case Steady State RθJC 1.36 Junction to Ambient *2 RθJA 62.5 Unit °C/W TL Note : *1 VDD=48V, L=100μH, IAV=40A (Fig.1) *2 100A 8.2 mΩ@10V Electrical Connection Specifications Drain Current (Pulse) ID Max Surface mounted on FR4 board using recommended footprint Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 1 1 Publication Order Number : NDBA100N10B/D NDBA100N10B Electrical Characteristics at Ta = 25°C Parameter Symbol Value Conditions min typ Unit max Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 10 μA Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 4 V Forward Transconductance gFS VDS=10V, ID=50A 75 RDS(on)1 ID=50A, VGS=15V 5.7 6.9 mΩ RDS(on)2 ID=50A, VGS=10V 6.3 8.2 mΩ Static Drain to Source On-State Resistance 100 V 2 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD IS=100A, VGS=0V 1.1 Reverse Recovery Time trr See Fig.3 130 ns Reverse Recovery Charge Qrr IS=100A, VGS=0V, VDD=50V, di/dt=100A/μs 400 nC VDS=50V, f=1MHz See Fig.2 VDS=48V, VGS=10V, ID=100A 2,950 pF 1,250 pF 20 pF 40 ns 385 ns 68 ns 52 ns 35 nC 13 nC 10 nC 1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit ≥50Ω 10V 0V D L S NDBA100N10B G VDD 50Ω Fig.3 Reverse Recovery Time Test Circuit NDBA100N10B D L G S VDD Driver MOSFET www.onsemi.com 2 Fig.2 Switching Time Test Circuit NDBA100N10B www.onsemi.com 3 NDBA100N10B www.onsemi.com 4 NDBA100N10B Package Dimensions NDBA100N10BT4H D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ ISSUE B B E2 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CHAMFER OPTIONAL 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.005 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AT DATUM H. 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN DIMENSIONS E, L1, D1 AND E1. 6. OPTIONAL MOLD FEATURE A A E L1 c2 NOTE 3 A D1 L1 D H DETAIL C E1 0.10 M B AM L2 A e c NOTE 6 2X TOP VIEW b 0.10 VIEW A-A SIDE VIEW B AM M H GAUGE PLANE L3 A1 L M B SEATING PLANE DIM A A1 b c c2 D D1 E E1 e H L L1 L2 L3 M INCHES MIN MAX 0.160 0.190 0.000 0.010 0.020 0.039 0.012 0.029 0.045 0.065 0.330 0.380 0.260 ----0.380 0.420 0.245 ----0.100 BSC 0.575 0.625 0.070 0.110 ----0.066 ----0.070 0.010 BSC 0º 8º MILLIMETERS MIN MAX 4.06 4.83 0.00 0.25 0.51 0.99 0.30 0.74 1.14 1.65 8.38 9.65 6.60 ----9.65 10.67 6.22 ----2.54 BSC 14.60 15.88 1.78 2.79 ----1.68 ----1.78 0.25 BSC 0º 8º DETAIL C GENERIC MARKING DIAGRAMS* VIEW A-A OPTIONAL CONSTRUCTIONS RECOMMENDED SOLDERING FOOTPRINT* XX XXXXXXXXX AWLYWWG 0.436 XXXXXXXXG AYWW AYWW XXXXXXXXG AKA XXXXXX XXYMW 0.366 0.653 A WL Y WW W M G AKA 2X 0.169 2X 0.063 0.100 PITCH DIMENSIONS: INCHES = Assembly Location = Wafer Lot = Year = Work Week = Week Code (SSG) = Month Code (SSG) = Pb-Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb −Free indicator, “G” or microdot “ ”, may or may not be present. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION Device Package Shipping note NDBA100N10BT4H D2PAK-3 (TO-263, 3-LEAD) 800 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NDBA100N10B is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5