SPP24N60C3 Data Sheet (345 KB, EN)

SPP24N60C3
Cool MOS™ Power Transistor
Feature
VDS @ Tjmax
650
V
RDS(on)
0.16
Ω
ID
24.3
A
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
PG-TO220-3-1
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPP24N60C3
Package
Ordering Code
PG-TO220-3-1 Q67040-S4639
Marking
24N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
24.3
TC = 100 °C
15.4
Pulsed drain current, tp limited by Tjmax
I D puls
72.9
Avalanche energy, single pulse
EAS
780
mJ
I D = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
1
I D = 24.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage static
VGS
24.3
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
240
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Reverse diode dv/dt 4)
dv/dt
Rev. 2.5
Page 1
15
V/ns
2009-12-01
SPP24N60C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
V DS = 480 , ID = 24.3 , Tj = 125 °C
Thermal Characteristics
Parameter
Symbol
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
0.52
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Soldering temperature, wavesoldering
Tsold
-
-
260
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=24.3A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
2.1
3
3.9
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=1200µΑ, VGS=VDS
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 2.5
RG
µA
Tj=25°C,
-
0.1
1
Tj=150°C
-
-
100
VGS=20, VDS =0V
-
-
100
Ω
VGS=10V, ID=15.4A,
Tj=25°C
-
0.14
0.16
Tj=150°C
-
0.34
-
f=1MHz, open Drain
-
0.66
-
Page 2
nA
2009-12-01
SPP24N60C3
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Transconductance
Symbol
g fs
Conditions
V DS≥2*I D*RDS(on)max,
Values
Unit
min.
typ.
max.
-
21.5
-
S
pF
ID=15.4A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
3000
-
Output capacitance
Coss
f=1MHz
-
1000
-
Reverse transfer capacitance
Crss
-
60
-
-
141
-
-
224
-
Effective output capacitance, 2) Co(er)
V GS=0V,
energy related
V DS=0V to 480V
Effective output capacitance, 3) Co(tr)
pF
time related
Turn-on delay time
td(on)
V DD=380V, V GS=0/10V,
-
13
-
Rise time
tr
ID=24.3A, R G=3.3Ω
-
21
-
Turn-off delay time
td(off)
-
140
-
Fall time
tf
-
14
-
-
12.7
-
-
45.8
-
-
104.9
135
-
5
-
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=480, ID=24.3A
VDD=480V, ID=24.3A,
ns
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=24.3A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
3C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
4ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 2.5
Page 3
2009-12-01
SPP24N60C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
24.3
-
-
72.9
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=480V, IF=IS ,
-
600
-
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
13
-
µC
Peak reverse recovery current
Irrm
-
70
-
A
Peak rate of fall of reverse
dirr /dt
-
1400
-
A/µs
recovery current
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
R th1
0.006524
R th2
Cth1
0.0004439
0.013
Cth2
0.001662
R th3
0.025
Cth3
0.002268
R th4
0.096
Cth4
0.006183
R th5
0.117
Cth5
0.014
R th6
0.053
Cth6
0.104
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.5
Page 4
2009-12-01
SPP24N60C3
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
260
10 2
SPP24N60C3
W
A
220
200
10 1
ID
Ptot
180
160
140
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
120
100
80
10 -1
60
40
20
0
0
20
40
60
80
100
120
°C
10 -2 0
10
160
10
1
10
2
10
V
VDS
TC
3 Transient thermal impedance
4 Typ. output characteristic
ZthJC = f (t p)
ID = f (VDS); Tj=25°C
parameter: D = tp/T
parameter: tp = 10 µs, VGS
10
0
100
Vgs = 20V
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V
80 Vgs = 6V
Vgs = 5.5V
70 Vgs = 5V
Vgs = 4.5V
60 Vgs = 4V
A
K/W
ID
ZthJC
10 -1
10 -2
50
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -3
40
30
20
10
10 -4 -7
10
Rev. 2.5
10
-6
10
-5
10
-4
10
-3
s
tp
10
-1
Page 5
0
0
4
8
12
16
20
26
V
VDS
2009-12-01
3
SPP24N60C3
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C
RDS(on)=f(ID)
parameter: tp = 10 µs, VGS
parameter: Tj=150°C, V GS
50
1
Vgs = 20V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
40 Vgs = 5V
Vgs = 4.5V
35 Vgs = 4V
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 6.5V
Vgs = 20V
Ω
RDS(on)
ID
A
30
25
0.8
0.7
0.6
20
0.5
15
0.4
10
0.3
5
0
0
4
8
12
16
20
0.2
0
26
V
VDS
5
10
15
20
25
30
35
40
A 50
ID
7 Drain-source on-state resistance
8 Typ. transfer characteristics
RDS(on) = f (Tj)
ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 15.4 A, VGS = 10 V
parameter: tp = 10 µs
100
Ω
A
0.8
80
0.7
70
ID
RDS(on)
1
SPP24N60C3
0.6
60
0.5
50
0.4
40
0.3
30
98%
0.2
Tj = 25°C
Tj = 150°C
20
typ
0.1
0
-60
10
-20
20
60
100
°C
180
Tj
Rev. 2.5
Page 6
0
0
1
2
3
4
5
6
7
8
V 10
VGS
2009-12-01
SPP24N60C3
9 Typ. gate charge
10 Forward characteristics of body diode
VGS = f (QGate)
IF = f (VSD)
parameter: ID = 24.3 A pulsed
parameter: Tj , tp = 10 µs
16
10 2
SPP24N60C3
V
SPP24N60C3
A
10
10 1
0.2 VDS max
IF
VGS
12
0.8 VDS max
8
6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2
0
0
Tj = 150 °C (98%)
20
40
60
80
100
10 -1
0
140 nC 170
120
0.4
0.8
1.2
1.6
2
2.4 V
QGate
3
VSD
11 Avalanche SOA
12 Avalanche energy
IAR = f (tAR)
EAS = f (Tj)
par.: Tj ≤ 150 °C
par.: ID = 10 A, VDD = 50 V
28
0.9
mJ
A
0.7
IAR
EAS
20
16
0.6
0.5
Tj(START)=25°C
12
0.4
0.3
8
Tj(START)=125°C
0.2
4
0 -3
10
Rev. 2.5
0.1
10
-2
10
-1
10
0
10
1
10
2
µs 10
tAR
4
Page 7
0
25
50
75
100
°C
150
Tj
2009-12-01
SPP24N60C3
13 Drain-source breakdown voltage
14 Avalanche power losses
V(BR)DSS = f (Tj)
PAR = f (f )
parameter: E AR=1mJ
720
SPP24N60C3
1000
V
680
PAR
V(BR)DSS
W
660
600
640
620
400
600
580
200
560
540
-60
-20
20
60
100
°C
0 3
10
180
10
4
5
10
Hz
Tj
10
f
15 Typ. capacitances
16 Typ. Coss stored energy
C = f (VDS)
Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 5
28
pF
Ciss
Coss
Crss
10 4
µJ
Eoss
C
20
10 3
16
12
10 2
8
10 1
4
10 0
0
100
200
300
400
V
600
VDS
Rev. 2.5
0
0
100
200
300
400
V
600
VDS
Page 8
2009-12-01
6
SPP24N60C3
Definition of diodes switching characteristics
Rev. 2.5
Page 9
2009-12-01
SPP24N60C3
PG-TO-220-3-1
Rev. 2.5
Page 10
2009-12-01
SPP24N60C3
Rev. 2.5
Page 11
2009-12-01