SPD03N60S5 Data Sheet (893 KB)

SPU03N60S5
SPD03N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS
600
V
RDS(on)
1.4
Ω
ID
3.2
A
PG-TO252
• Periodic avalanche rated
PG-TO251
• Extreme dv/dt rated
2
• Ultra low effective capacitances
3
1
• Improved transconductance
1
Type
Package
Ordering Code
SPU03N60S5
PG-TO251
Q67040-S4227
Marking
03N60S5
SPD03N60S5
PG-TO252
Q67040-S4187
03N60S5
2
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
3.2
TC = 100 °C
2
Pulsed drain current, tp limited by Tjmax
I D puls
5.7
Avalanche energy, single pulse
EAS
100
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
0.2
mJ
I D = 2.4 A, VDD = 50 V
I D = 3.2 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage
VGS
3.2
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
38
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Rev. 2.5
Page 1
2008-04-07
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SPU03N60S5
SPD03N60S5
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
20
V/ns
Values
Unit
V DS = 480 V, ID = 3.2 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
3.3
Thermal resistance, junction - ambient, leaded
RthJA
-
-
75
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
75
@ 6 cm2 cooling area 2)
-
-
50
-
-
260
Soldering temperature, *)
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=3.2A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
3.5
4.5
5.5
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=135µΑ, VGS=V DS
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
µA
Tj=25°C,
-
0.5
1
Tj=150°C
-
-
70
VGS=20V, VDS=0V
-
-
100
nA
Ω
VGS=10V, ID=2A,
Tj=25°C
-
1.26
1.4
Tj=150°C
-
3.4
-
*) TO252: reflow soldering, MSL3; TO251: wavesoldering
Rev. 2.5
Page 2
2008-04-07
SPU03N60S5
SPD03N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
1.8
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=2A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
420
-
Output capacitance
Coss
f=1MHz
-
150
-
Reverse transfer capacitance
Crss
-
3.6
-
Turn-on delay time
t d(on)
V DD=350V, V GS=0/10V,
-
35
-
Rise time
tr
ID=3.2A, RG=20Ω
-
25
-
Turn-off delay time
t d(off)
-
40
-
Fall time
tf
-
15
22.5
-
3.5
-
-
7
-
-
12.4
16
-
8
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=350V, ID=3.2A
VDD=350V, ID=3.2A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=3.2A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.5
Page 3
2008-04-07
SPU03N60S5
SPD03N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
3.2
-
-
5.7
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=350V, IF =IS ,
-
1000
1700
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
2.3
-
µC
Typical Transient Thermal Characteristics
Value
Symbol
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
R th1
0.054
R th2
Cth1
0.00005232
0.103
Cth2
0.0002034
R th3
0.178
Cth3
0.0002963
R th4
0.757
Cth4
0.0009103
R th5
0.682
Cth5
0.002084
R th6
0.202
Cth6
0.024
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.5
Page 4
2008-04-07
SPU03N60S5
SPD03N60S5
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
40
10 1
SPU03N60S5
W
A
32
10 0
ID
Ptot
28
24
20
16
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 -1
12
8
4
0
0
20
40
60
80
100
°C
120
10 -2 0
10
160
10
1
10
2
10
V
VDS
TC
3 Transient thermal impedance
4 Typ. output characteristic
ZthJC = f (t p)
ID = f (VDS); Tj=25°C
parameter: D = tp/T
parameter: tp = 10 µs, VGS
10
1
10
A
K/W
10V
20V
12V
7
10 0
ID
ZthJC
8
6
9V
5
8.5V
4
10 -1
8V
3
7.5V
2
7V
1
10 -2 -5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
Rev. 2.5
0
0
6.5V
5
10
15
V
25
VDS
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2008-04-07
3
SPU03N60S5
SPD03N60S5
5 Drain-source on-state resistance
6 Typ. transfer characteristics
RDS(on) = f (Tj)
ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 2 A, VGS = 10 V
parameter: tp = 10 µs
8
SPU03N60S5
8
A
6
6
ID
RDS(on)
Ω
5
5
4
4
3
3
2
2
98%
typ
1
1
0
-60
-20
20
60
°C
100
0
0
180
4
8
V
12
20
VGS
Tj
7 Typ. gate charge
8 Forward characteristics of body diode
VGS = f (QGate)
IF = f (VSD)
parameter: ID = 3.2 A pulsed
parameter: Tj , tp = 10 µs
16
10 1
SPU03N60S5
V
SPU03N60S5
A
0.2 VDS max
10 0
10
IF
VGS
12 0.8 VDS max
8
6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2
0
0
Tj = 150 °C (98%)
2
4
6
8
10
12
14
16 nC 19
QGate
Rev. 2.5
10 -2
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
Page 6
2008-04-07
SPU03N60S5
SPD03N60S5
9 Avalanche SOA
10 Avalanche energy
IAR = f (tAR)
EAS = f (Tj)
par.: Tj ≤ 150 °C
par.: ID = 2.4 A, V DD = 50 V
3.5
120
A
mJ
Tj(START) =25°C
IAR
EAS
2.5
80
2
60
1.5
Tj(START) =125°C
40
1
20
0.5
0 -3
10
10
-2
10
-1
10
0
10
1
10
2
µs 10
tAR
0
20
4
40
60
80
100
120
°C
160
Tj
11 Drain-source breakdown voltage
12 Typ. capacitances
V(BR)DSS = f (Tj)
C = f (VDS)
parameter: V GS=0V, f=1 MHz
720
10 4
SPU03N60S5
pF
680
10 3
Ciss
660
C
V(BR)DSS
V
640
10 2
Coss
620
600
10 1
580
Crss
560
540
-60
-20
20
60
100
°C
180
Tj
Rev. 2.5
10 0
0
10
20
30
40
50
60
70
80
V
100
VDS
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2008-04-07
SPU03N60S5
SPD03N60S5
Definition of diodes switching characteristics
Rev. 2.5
Page 8
2008-04-07
SPU03N60S5
SPD03N60S5
PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
Rev. 2.5
Page 9
2008-04-07
SPU03N60S5
SPD03N60S5
PG-TO251-3-1, PG-TO251-3-21 (I-PAK)
Rev. 2.5
Page 10
2008-04-07
SPU03N60S5
SPD03N60S5
Rev. 2.5
Page 11
2008-04-07