SPD04N60S5

SPU04N60S5
SPD04N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS
600
V
RDS(on)
0.95
Ω
ID
4.5
A
PG-TO252
• Periodic avalanche rated
• Extreme dv/dt rated
PG-TO251
2
• Ultra low effective capacitances
3
1
1
• Improved transconductance
Type
Package
Ordering Code
SPU04N60S5
PG-TO251
Q67040-S4228
Marking
04N60S5
SPD04N60S5
PG-TO252
Q67040-S4202
04N60S5
2
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
4.5
TC = 100 °C
2.8
9
Pulsed drain current, tp limited by Tjmax
I D puls
Avalanche energy, single pulse
EAS
130
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
0.4
mJ
I D = 3.4 A, VDD = 50 V
I D = 4.5 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage
VGS
4.5
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
50
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Rev. 2.5
Page 1
2008-04-08
3
SPU04N60S5
SPD04N60S5
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
20
V/ns
Values
Unit
V DS = 480 V, ID = 4.5 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
2.5
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm2 cooling area 2)
-
35
-
-
-
260
Soldering temperature, *)
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=4.5A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
3.5
4.5
5.5
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=200µΑ, VGS=V DS
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
µA
Tj=25°C,
-
0.5
1
Tj=150°C
-
-
50
VGS=20V, VDS=0V
-
-
100
nA
Ω
VGS=10V, ID=2.8A,
Tj=25°C
-
0.85
0.95
Tj=150°C
-
2.3
-
f=1MHz, open Drain
-
20
-
*) TO252: reflow soldering, MSL3; TO251: wavesoldering
Rev. 2.5
Page 2
2008-04-08
SPU04N60S5
SPD04N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
2.5
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=2.8A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
580
-
Output capacitance
Coss
f=1MHz
-
220
-
Reverse transfer capacitance
Crss
-
7
-
-
20
-
-
35
-
-
55
-
-
30
-
Effective output capacitance, 3) Co(er)
energy related
V GS=0V,
V DS=0V to 480V
Effective output capacitance, 4) Co(tr)
time related
Turn-on delay time
t d(on)
pF
V DD=350V, V GS=0/10V,
ns
ID=4.5A, RG=18Ω
Rise time
tr
V DD=350V, V GS=0/10V,
ID=4.5A, RG=18
Turn-off delay time
t d(off)
V DD=350V, V GS=0/10V,
-
60
90
Fall time
tf
ID=4.5A, RG=18Ω
-
15
22.5
Gate to source charge
Qgs
VDD=350V, ID=4.5A
-
4.5
-
Gate to drain charge
Qgd
-
11
-
Gate charge total
Qg
-
17.6
22.9
-
8
-
Gate Charge Characteristics
VDD=350V, ID=4.5A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=4.5A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V
o(er)
DSS.
4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.5
Page 3
2008-04-08
SPU04N60S5
SPD04N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
4.5
-
-
9
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=350V, IF =IS ,
-
900
1530
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
3.2
-
µC
Typical Transient Thermal Characteristics
Value
Symbol
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
R th1
0.039
R th2
Cth1
0.00007347
0.074
Cth2
0.0002831
R th3
0.132
Cth3
0.0004062
R th4
0.555
Cth4
0.001215
R th5
0.529
Cth5
0.00276
R th6
0.169
Cth6
0.029
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.5
Page 4
2008-04-08
SPU04N60S5
SPD04N60S5
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
55
10 1
SPU04N60S5
W
A
45
10 0
35
ID
Ptot
40
30
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
25
20
10 -1
15
10
5
0
0
20
40
60
80
100
°C
120
10 -2 0
10
160
10
1
10
2
10
V
VDS
TC
3 Transient thermal impedance
4 Typ. output characteristic
ZthJC = f (t p)
ID = f (VDS); Tj=25°C
parameter: D = tp/T
parameter: tp = 10 µs, VGS
10
1
14
A
10 0
20V
12V
10V
10
9.5V
8
9V
ID
ZthJC
K/W
8.5V
6
10 -1
8V
4
7.5V
7V
2
6.5V
10 -2 -5
10
10
-4
10
-3
10
-2
s
10
-1
tp
Rev. 2.5
0
0
5
10
15
V
25
VDS
Page 5
2008-04-08
3
SPU04N60S5
SPD04N60S5
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C
RDS(on)=f(ID)
parameter: tp = 10 µs, VGS
parameter: Tj=150°C, V GS
8
5
20V
12V
10V
9.5V
RDS(on)
9V
8.5V
ID
A
mΩ
8V
4
3.5
4
3
20V
12V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
7.5V
2.5
7V
2
2
6.5V
6V
0
0
5
10
1.5
V
15
1
0
25
1
2
3
4
5
6
7
VDS
A
ID
7 Drain-source on-state resistance
8 Typ. transfer characteristics
RDS(on) = f (Tj)
ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 2.8 A, VGS = 10 V
parameter: tp = 10 µs
5.5
SPU04N60S5
8.5
16
Ω
A
12
4
3.5
ID
RDS(on)
4.5
10
3
8
2.5
6
2
1.5
4
98%
1
typ
2
0.5
0
-60
-20
20
60
100
°C
180
Tj
Rev. 2.5
Page 6
0
0
2
4
6
8
10
12
14
16
V 20
VGS
2008-04-08
SPU04N60S5
SPD04N60S5
9 Typ. gate charge
10 Forward characteristics of body diode
VGS = f (QGate)
IF = f (VSD)
parameter: ID = 4.5 A pulsed
parameter: Tj , tp = 10 µs
16
10 1
SPU04N60S5
V
SPU04N60S5
A
0.2 VDS max
10 0
10
IF
VGS
12 0.8 VDS max
8
6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2
Tj = 150 °C (98%)
0
0
4
8
12
16
20
nC
10 -2
0
26
0.4
0.8
1.2
1.6
2.4 V
2
QGate
3
VSD
11 Avalanche SOA
12 Avalanche energy
IAR = f (tAR)
EAS = f (Tj)
par.: Tj ≤ 150 °C
par.: ID = 3.4 A, V DD = 50 V
5
160
A
mJ
4
Tj(START) =25°C
120
EAS
IAR
3.5
3
2.5
2
100
80
60
Tj(START) =125°C
1.5
40
1
20
0.5
0 -3
10
Rev. 2.5
10
-2
10
-1
10
0
10
1
10
2
µs 10
tAR
4
Page 7
0
20
40
60
80
100
120
°C
160
Tj
2008-04-08
SPU04N60S5
SPD04N60S5
13 Drain-source breakdown voltage
14 Avalanche power losses
V(BR)DSS = f (Tj)
PAR = f (f )
parameter: E AR=0.4mJ
720
SPU04N60S5
200
W
680
150
PAR
V(BR)DSS
V
660
125
640
100
620
75
600
50
580
25
560
540
-60
-20
20
60
100
°C
0 4
10
180
10
5
Hz
Tj
10
f
15 Typ. capacitances
16 Typ. Coss stored energy
C = f (VDS)
Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 4
3.5
pF
µJ
10 3
Ciss
C
Eoss
2.5
2
10 2
1.5
Coss
1
10 1
0.5
Crss
10 0
0
100
200
300
400
V
600
VDS
Rev. 2.5
0
0
100
200
300
400
V
600
VDS
Page 8
2008-04-08
6
SPU04N60S5
SPD04N60S5
Definition of diodes switching characteristics
Rev. 2.5
Page 9
2008-04-08
SPU04N60S5
SPD04N60S5
PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
Rev. 2.5
Page 10
2008-04-08
SPU04N60S5
SPD04N60S5
PG-TO251-3-1, PG-TO251-3-21 (I-PAK)
Rev. 2.5
Page 11
2008-04-08
SPU04N60S5
SPD04N60S5
Rev. 2.5
Page 12
2008-04-08