NTS12120EMFS D

NTS12120EMFS,
NRVTS12120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
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Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
LED Lighting
Instrumentation
•
MARKING
DIAGRAM
A
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE1212
A
Y
W
ZZ
Mechanical Characteristics:
•
•
•
•
5,6
1,2,3
1
Typical Applications
•
•
•
•
•
TRENCH SCHOTTKY
RECTIFIERS
12 AMPERES
120 VOLTS
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
A
C
TE1212
AYWWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTS12120EMFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTS12120EMFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVTS12120EMFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVTS12120EMFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1
Publication Order Number:
NTS12120EMFS/D
NTS12120EMFS, NRVTS12120EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
120
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV)
12
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 163°C)
IFRM
24
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
200
A
Storage Temperature Range
Tstg
−65 to +175
°C
TJ
−55 to +175
°C
EAS
100
mJ
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
V
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
2.0
−
°C/W
Symbol
Typ
Max
Unit
0.6
0.735
−
0.83
0.515
0.588
−
0.69
1.73
3.75
−
55
mA
mA
2.4
3.87
−
30
mA
mA
ELECTRICAL CHARACTERISTICS
Rating
Instantaneous Forward Voltage (Note 1)
(IF = 6 A, TJ = 25°C)
(IF = 12 A, TJ = 25°C)
VF
(IF = 6 A, TJ = 125°C)
(IF = 12 A, TJ = 125°C)
Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
IR
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
V
NTS12120EMFS, NRVTS12120EMFS
TYPICAL CHARACTERISTICS
100
iF, INSTANTANEOUS FORWARD
CURRENT (A)
TA = 125°C
10
TA = 150°C
1
TA = 175°C
TA = 25°C
TA = −55°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
TA = −55°C
0
0.1
0.2
0.3
0.4
0.6
0.5
0.7
0.8
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
TA = 175°C
1.E−02
TA = 150°C
TA = 150°C
TA = 125°C
1.E−02
TA = 125°C
0.9
TA = 175°C
1.E−01
1.E−03
1.E−03
1.E−04
1.E−04
TA = 25°C
1.E−05
1.E−05
TA = 25°C
1.E−06
0
10
20
30
40
50
60
1.E−06
70
90 100 110 120
80
0
10
20
30
40
50
60
70
80
90 100 110 120
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
TJ = 25°C
1000
100
0.1
1.E−07
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
10,000
C, JUNCTION CAPACITANCE (pF)
TA = 25°C
TA = 175°C
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−01
10
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E+00
1.E−07
TA = 150°C
0.1
0.9
TA = 125°C
10
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
IF(AV), AVERAGE FORWARD CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1
10
100
25
RqJC = 2.0 °C/W
20
DC
15
Square Wave
10
5
0
80
90
100
110
120
130
140
150
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
160
170
NTS12120EMFS, NRVTS12120EMFS
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
20
IPK/IAV = 20
18
IPK/IAV = 10
TJ = 175°C
16
14
IPK/IAV = 5
12
10
8
Square Wave
6
4
2
0
DC
0
1
2
3
4
5
6
7
9
8
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
R(t) (°C/W)
10
1
0.1
0.01
50% Duty Cycle
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Characteristics
R(t) (°C/W)
10
1 50% Duty Cycle
20%
10%
0.1 5%
2%
1%
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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4
NTS12120EMFS, NRVTS12120EMFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
2
A
B
D1
2X
0.20 C
3
q
E
2
2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
4X
E1
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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PUBLICATION ORDERING INFORMATION
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5
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For additional information, please contact your local
Sales Representative
NTS12120EMFS/D