SPW35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS(on),max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances PG-TO247 • Improved transconductance Type Package Ordering Code Marking SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 34.6 T C=100 °C 21.9 Unit A Pulsed drain current1) I D,pulse T C=25 °C 103.8 Avalanche energy, single pulse E AS I D=17.3 A, V DD=50 V 1500 Avalanche energy, repetitive t AR1),2) E AR I D=34.6 A, V DD=50 V 1.5 Avalanche current, repetitive t AR1) I AR Drain source voltage slope dv /dt I D=34.6 A, V DS=480 V, T j=125 °C 50 V/ns Gate source voltage V GS static ±20 V V GS AC (f >1 Hz) ±30 Power dissipation P tot T C=25 °C 313 W Operating and storage temperature T j, T stg -55 ... 150 °C Reverse diode dv/dt 6) dv/dt Rev. 2.5 34.6 15 Page 1 mJ A V/ns 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 0.4 leaded - - 62 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA Soldering temperature, wavesoldering T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=34.6 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=1.9 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=600 V, V GS=0 V, T j=150 °C - - 100 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=21.9 A, T j=25 °C - 0.081 0.1 Ω V GS=10 V, I D=21.9 A, T j=150 °C - 0.2 - Gate resistance RG f =1 MHz, open drain - 0.6 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=21.9 A - 36 - Rev. 2.5 Page 2 S 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - 4500 - - 1500 - - 100 - - 180 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy C o(er) related3) V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related4) C o(tr) - 324 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - Turn-off delay time t d(off) - 70 - Fall time tf - 10 - Gate to source charge Q gs - 18 - Gate to drain charge Q gd - 70 - Gate charge total Qg - 150 200 Gate plateau voltage V plateau - 5.3 - V DD=480 V, V GS=10 V, I D=34.6 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=480 V, I D=34.6 A, V GS=0 to 10 V nC V 1) Pulse width limited by maximum temperature T j,max only 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 6) ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.5 Page 3 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 Parameter Values Symbol Conditions Unit min. typ. max. - - 34.6 - - 103.8 - 0.95 1.2 V - 600 - ns - 21 - µC - 90 - A Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm T C=25 °C V GS=0 V, I F=34.6 A, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs A Typical Transient Thermal Characteristics Symbol Value Unit Symbol typ. R th1 0.00441 R th2 Value Unit typ. K/W C th1 0.00037 0.00608 C th2 0.00223 R th3 0.0341 C th3 0.00315 R th4 0.0602 C th4 0.0179 R th5 0.0884 C th5 0.098 C th6 4.45) Ws/K 5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Rev. 2.5 Page 4 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 400 103 limited by on-state resistance 300 1 µs 102 100 µs I D [A] P tot [W] 10 µs 200 101 DC 1 ms 10 ms 100 100 0 10-1 0 40 80 120 160 100 101 T C [°C] 102 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 100 7V 20 V Z thJC [K/W] 6.5 V 80 0.5 10-1 103 0.2 6V 60 I D [A] 0.1 0.05 5.5 V 40 -2 10 0.02 0.01 5V single pulse 20 4.5 V 4V 10-3 10-6 0 10-5 10-4 10-3 10-2 10-1 100 5 10 15 20 V DS [V] t p [s] Rev. 2.5 0 Page 5 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 60 0.8 20 V 6V 7V 50 0.7 5.5 V 6.5 V 0.6 4.5 V 4V 5.5 V 5V 40 R DS(on) [Ω] I D [A] 0.5 5V 30 0.4 6V 0.3 20 4.5 V 20 V 0.2 10 4V 0.1 0 0 0 5 10 15 20 0 10 20 30 V DS [V] 40 50 60 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=21.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 100 25 °C 0.25 80 60 150 °C I D [A] R DS(on) [Ω] 0.2 0.15 98 % 0.1 40 typ 20 0.05 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 2.5 0 2 4 6 8 10 V GS [V] Page 6 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=34.6 A pulsed I F=f(V SD) parameter: V DD parameter: T j 12 103 10 25 °C, 98% 25 °C 102 8 120 V 150 °C, 98% 480 V I F [A] V GS [V] 150 °C 6 101 4 100 2 10-1 0 0 50 100 150 200 0 0.5 1 1.5 2 2.5 V SD [V] Q gate [nC] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=17.3 A; V DD=50 V 40 1600 30 1200 E AS [mJ] I AV [A] parameter: T j(start) 20 800 25 °C 125 °C 10 400 0 0 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 60 100 140 180 T j [°C] t AR [µs] Rev. 2.5 20 Page 7 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS)=f(T j); I D=0.25 mA C =f(V DS); V GS=0 V; f =1 MHz 700 105 660 104 C [pF] V BR(DSS) [V] Ciss 620 103 Coss 102 580 Crss 101 540 -60 -20 20 60 100 140 180 T j [°C] 0 100 200 300 400 500 V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 30 25 E oss [µJ] 20 15 10 5 0 0 100 200 300 400 500 600 V DS [V] Rev. 2.5 Page 8 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 Definition of diode switching characteristics Rev. 2.5 Page 9 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 PG-TO-247-3-1 Rev. 2.5 Page 10 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW35N60C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.5 Page 11 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A Data sheet erratum PCN 2009-134-A New package outlines TO-247 1 New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Rev. 2.0, 2010-02-01