SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS(on) 0.38 Ω ID 11 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW11N60S5 Package PG-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 11 TC = 100 °C 7 Pulsed drain current, tp limited by Tjmax I D puls 22 Avalanche energy, single pulse EAS 340 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.6 mJ I D = 5.5 A, VDD = 50 V I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 11 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 125 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.4 Page 1 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=11A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=500µΑ, VGS=V DS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.4 RG µA Tj=25°C, - - 25 Tj=150°C - - 250 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=7A, Tj=25°C - 0.34 0.38 Tj=150°C - 0.92 - f=1MHz, open Drain - 29 - Page 2 nA 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 6 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=7A Input capacitance Ciss V GS=0V, V DS=25V, - 1460 - Output capacitance Coss f=1MHz - 610 - Reverse transfer capacitance Crss - 21 - - 45 - - 85 - Effective output capacitance, 2) Co(er) energy related V GS=0V, V DS=0V to 480V Effective output capacitance, 3) Co(tr) time related Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 130 - Rise time tr ID=11A, R G=6.8Ω - 35 - Turn-off delay time t d(off) - 150 225 Fall time tf - 20 30 - 10.5 - - 24 - - 41.5 54 - 8 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg pF VDD=350V, ID=11A VDD=350V, ID=11A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=11A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.4 Page 3 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 11 - - 22 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 650 1105 ns Reverse recovery charge Qrr di F/dt=100A/µs - 7.9 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.015 R th2 Cth1 0.0001878 0.03 Cth2 0.0007106 R th3 0.056 Cth3 0.000988 R th4 0.197 Cth4 0.002791 R th5 0.216 Cth5 0.007285 R th6 0.083 Cth6 0.063 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.4 Page 4 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 140 10 2 SPW11N60S5 W A 120 110 10 1 90 ID Ptot 100 80 10 0 70 60 50 40 10 -1 30 20 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 3 35 20V 12V 10V K/W A 25 ID ZthJC 10 0 10 -1 9V 20 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 15 8V 10 7V 5 6V 10 -4 -7 10 Rev. 2.4 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 5 10 15 VDS 25 V 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 2 18 20V 12V 10V A 9V mΩ RDS(on) 14 ID 8V 12 10 20V 12V 10V 9V 8V 7V 6V 1 8 7V 6 0.5 4 6V 2 0 0 5 10 V 15 0 0 25 2 4 6 8 10 12 14 VDS A ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 7 A, VGS = 10 V parameter: tp = 10 µs 2.1 SPW11N60S5 18 32 Ω A 1.6 24 1.4 ID RDS(on) 1.8 20 1.2 16 1 0.8 12 0.6 8 98% 0.4 typ 4 0.2 0 -60 -20 20 60 100 °C 180 0 0 4 8 12 V 20 VGS Tj Rev. 2.4 25 °C 150 °C Page 6 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 11 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPW11N60S5 V SPW11N60S5 A 0.2 VDS max 10 1 10 IF VGS 12 0.8 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 10 20 30 40 50 nC 10 -1 0 65 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 5.5 A, V DD = 50 V 350 11 A mJ 9 250 EAS IAR 8 7 200 6 5 Tj (START) =25°C 150 4 3 100 Tj (START) =125°C 2 50 1 0 -3 10 Rev. 2.4 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR Page 7 0 20 40 60 80 100 120 °C 160 Tj 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.6mJ 720 SPW11N60S5 300 V 680 PAR V(BR)DSS W 660 200 640 150 620 100 600 580 50 560 540 -60 -20 20 60 100 °C 0 4 10 180 10 5 Hz Tj 10 6 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 7.5 µJ pF Ciss 6 10 3 C Eoss 5.5 5 4.5 4 10 2 Coss 3.5 3 2.5 10 1 2 Crss 1.5 1 0.5 10 0 0 100 200 300 400 V 600 VDS Rev. 2.4 0 0 100 200 300 400 V 600 VDS Page 8 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW11N60S5 Definition of diodes switching characteristics Rev. 2.4 Page 9 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A 63:116S5 3G72 Rev. 2.4 PDJH 8211 Please note the new package dimensions arccording to PCN 2009-134-A 63:116S5 Rev. 2.4 Page 11 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A Data sheet erratum PCN 2009-134-A New package outlines TO-247 1 New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Rev. 2.0, 2010-02-01