Si4808DY Datasheet

Si4808DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.022 at VGS = 10 V
7.5
0.030 at VGS = 4.5 V
6.5
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus
• Compliant to RoHS directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.50 V at 1.0 A
2.0
D1
D2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Schottky Diode
G1
G2
Top View
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Ordering Information: Si4808DY-T1-E3 (Lead (Pb)-free)
Si4808DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
5.7
6.0
4.6
TA = 70 °C
PD
1.7
0.9
2.0
1.1
1.3
0.7
TJ, Tstg
Operating Junction and Storage Temperature Range
A
30
IS
TA = 25 °C
V
7.5
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
W
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady-State
Steady-State
RthJA
RthJC
Schottky
Typ.
Max.
Typ.
Max.
52
62.5
53
62.5
93
110
93
110
35
40
35
40
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71157
S09-0867-Rev. C, 18-May-09
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Si4808DY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = 250 µA
0.8
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VDS = 24 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
ID(on)
± 100
Ch-1
1
Ch-2
100
Ch-1
15
Ch-2
VDS = 5 V, VGS = 10 V
RDS(on)
gfs
VSD
V
µA
2000
20
A
VGS = 10 V, ID = 7.5 A
0.018
0.022
VGS = 4.5 V, ID = 6.5 A
0.024
0.030
VDS = 15 V, ID = 7.5 A
22
IS = 1 A, VGS = 0 V
nA
Ω
S
Ch-1
0.8
1.2
Ch-2
0.47
0.5
13
20
V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDS = 15 V, VGS = 10 V, ID = 7.5 A
0.5
td(on)
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery
Time
trr
nC
2
2.7
3.2
8
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
IF = 1.7 A, dI/dt = 100 A/µs
Ω
16
10
20
21
40
10
20
Ch-1
40
80
Ch-2
32
70
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
Test Conditions
Typ.
Max.
IF = 1.0 A
Min.
0.47
0.50
IF = 1.0 A, TJ = 125 °C
0.36
0.42
VR = 30 V
0.004
0.100
VR = 30 V, TJ = 100 °C
0.7
10
VR = - 30 V, TJ = 125 °C
3.0
20
VR = 10 V
50
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71157
S09-0867-Rev. C, 18-May-09
Si4808DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
VGS = 10 V thru 4 V
3V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
12
8
TC = 125 °C
4
4
25 °C
2V
- 55 °C
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
1.0
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.040
1000
0.032
800
VGS = 4.5 V
0.024
VGS = 10 V
0.016
3.0
Ciss
600
400
Coss
Crss
200
0.008
0
0.000
0
4
8
12
16
0
20
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
10
VGS = 10 V
ID = 7.5 A
VDS = 15 V
ID = 7.5 A
1.4
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
1.5
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
6
4
1.2
1.0
0.8
2
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71157
S09-0867-Rev. C, 18-May-09
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4808DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.04
20
ID = 7.5 A
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
I S - Source Current (A)
10
TJ = 25 °C
0.03
0.02
0.01
0.00
1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
6
8
10
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
50
0.2
40
ID = 250 µA
0.0
Power (W)
V GS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
- 0.2
30
20
- 0.4
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
10 -3
10 -2
10 -1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 93 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 71157
S09-0867-Rev. C, 18-May-09
Si4808DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
10
I F - Forward Current (A)
I R - Reverse Current (mA)
TJ = 150 °C
1
30 V
0.1
24 V
0.01
TJ = 25 °C
0.001
0.0001
0
25
50
75
100
125
1
0.0
150
0.3
0.6
0.9
1.2
1.5
VF - Forward Voltage Drop (V)
TJ - Temperature (°C)
Forward Voltage Drop
Reverse Current vs. Junction Temperature
200
C - Capacitance (pF)
160
120
80
Coss
40
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71157.
Document Number: 71157
S09-0867-Rev. C, 18-May-09
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Revision: 02-Oct-12
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Document Number: 91000