JFET Amplifier

BFR30LT1, BFR31LT1
JFET Amplifiers
N−Channel
Features
• Pb−Free Package is Available
http://onsemi.com
2 SOURCE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Î
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
3
GATE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain −Source Voltage
VDS
25
Vdc
Gate −Source Voltage
VGS
25
Vdc
1 DRAIN
MARKING
DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
417
°C/W
3
1
SOT−23
CASE 318
STYLE 10
2
1
PD
RJA
PD
RJA
TJ, Tstg
x
M
= 1 or 2
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BFR30LT1
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
BFR30LT1G
°C
−55 to +150
1. Device mounted on FR4 glass epoxy printed circuit board using the
recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
MxM
BFR31LT1
BFR31LT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 4
1
Publication Order Number:
BFR30LT1/D
BFR30LT1, BFR31LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Gate Reverse Current
(VGS = 10 Vdc, VDS = 0)
IGSS
−
0.2
nAdc
Gate Source Cutoff Voltage
(ID = 0.5 nAdc, VDS = 10 Vdc)
BFR30
BFR31
VGS(OFF)
−
−
5.0
2.5
Vdc
Gate Source Voltage
(ID = 1.0 mAdc, VDS = 10 Vdc)
BFR30
BFR31
BFR30
BFR31
VGS
−0.7
−
−
−
−3.0
−1.3
−4.0
−2.0
Vdc
BFR30
BFR31
IDSS
4.0
1.0
10
5.0
mAdc
1.0
1.5
0.5
0.75
4.0
4.5
−
−
40
20
25
15
OFF CHARACTERISTICS
(ID = 50 Adc, VDS = 10 Vdc)
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
SMALL−SIGNAL CHARACTERISTICS
yfs
Forward Transconductance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
BFR30
BFR31
BFR30
BFR31
(ID = 200 Adc, VDS = 10 Vdc, f = 1.0 kHz)
mmhos
yos
Output Admittance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz)
(ID = 200 Adc, VDS = 10 Vdc)
BFR30
BFR31
mhos
Input Capacitance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
(ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz)
Ciss
−
−
5.0
4.0
pF
Reverse Transfer Capacitance
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
(ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz)
Crss
−
−
1.5
1.5
pF
TYPICAL CHARACTERISTICS
14
VDS = 15 V
VGS = 0
RS = 1 M
4
VDS = 15 V
VGS = 0
f = 1 kHz
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5
3
2
10
8
6
4
1
2
0
0.01
0.1
1.0
f, FREQUENCY (kHz)
0
100
10
0.001
Figure 1. Noise Figure versus Frequency
0.01
0.1
1.0
RS, SOURCE RESISTANCE (Megohms)
Figure 2. Noise Figure versus Source
Resistance
http://onsemi.com
2
10
BFR30LT1, BFR31LT1
TYPICAL CHARACTERISTICS
1.2
VGS(OFF) −1.2 V
1.2
VGS(OFF) −1.2 V
VGS = 0 V
1.0
−0.2 V
0.8
0.6
−0.4 V
0.4
−0.6 V
0
VDS = 15 V
0.6
0.4
0
−1.2
25
5
10
15
20
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
0.8
0.2
−0.8 V
−1.0 V
0.2
0
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
1.0
Figure 3. Typical Drain Characteristics
0
Figure 4. Common Source Transfer
Characteristics
5
5
VGS = 0 V
VGS(OFF) −3.5 V
4
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
−0.8
−0.4
VGS, GATE−SOURCE VOLTAGE (VOLTS)
VGS(OFF) −3.5 V
3
−1 V
2
−2 V
1
4
3
VDS = 15 V
2
1
−3 V
0
0
5
10
15
20
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
0
−5
25
Figure 5. Typical Drain Characteristics
10
VGS(OFF) −5.8 V
I D , DRAIN CURRENT (mA)
I D , DRAIN CURRENT (mA)
VGS = 0 V
−1 V
6
−2 V
4
−3 V
2
0
Figure 6. Common Source Transfer
Characteristics
10
8
−3
−2
−1
−4
VGS, GATE−SOURCE VOLTAGE (VOLTS)
−4 V
VGS(OFF) −5.8 V
8
6
VDS = 15 V
4
2
−5 V
0
−7
0
0
5
10
15
20
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
25
Figure 7. Typical Drain Characteristics
−6
−5
−4
−3
−2
−1
VGS, GATE − SOURCE VOLTAGE (VOLTS)
Figure 8. Common Source Transfer
Characteristics
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Under dc conditions, self heating in higher IDSS units reduces IDSS.
http://onsemi.com
3
0
BFR30LT1, BFR31LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
4
For additional information, please contact your
local Sales Representative.
BFR30LT1/D