25 V, 269 A, Single N-Channel, SO-8FL Power MOSFET

NTMFS4H013NF
Power MOSFET
25 V, 269 A, Single N−Channel, SO−8FL
Features
•
•
•
•
•
Integrated Schottky Diode
Optimized Design to Minimize Conduction and Switching Losses
Optimized Package to Minimize Parasitic Inductances
Optimized material for improved thermal performance
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•
•
•
•
High Performance DC-DC Converters
System Voltage Rails
Netcom, Telecom
Servers & Point of Load
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VGS
MAX RDS(on)
TYP QGTOT
4.5 V
1.4 mW
26 nC
10 V
0.9 mW
56 nC
PIN CONNECTIONS
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
SO8−FL (5 x 6 mm)
Symbol
Value
Units
Drain-to-Source Voltage
VDSS
25
V
Gate-to-Source Voltage
VGS
±20
V
Continuous Drain Current RqJA
(TA = 25°C, Note 1)
ID
43
A
Power Dissipation RqJA
(TA = 25°C, Note 1)
PD
2.70
W
Continuous Drain Current RqJC
(TC = 25°C, Note 1)
ID
269
A
Power Dissipation RqJC
(TC = 25°C, Note 1)
PD
104
W
Pulsed Drain Current (tp = 10 ms)
IDM
505
A
Single Pulse Drain-to-Source Avalanche
Energy (Note 1) (IL = 51 Apk, L = 0.3 mH)
EAS
390
mJ
G
Drain to Source dV/dt
dV/dt
7
V/ns
(4)
TJ(max)
150
°C
Storage Temperature Range
TSTG
−55 to
150
°C
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
TSLD
260
°C
Maximum Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 33 A, EAS = 164 mJ.
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D
(5−8)
S
(1, 2, 3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMALCHARACTERISTICS
Parameter
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
Symbol
Max
RqJA
RqJC
40.0
1.5
Units
°C/W
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 0
1
Publication Order Number:
NTMFS4H013NF/D
NTMFS4H013NF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
V
34.5
VGS = 0 V,
VDS = 20 V
TJ = 25 °C
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = +20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mV/°C
500
mA
+100
nA
2.1
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
4.6
mV/°C
VGS = 10 V
ID = 30 A
0.72
0.9
VGS = 4.5 V
ID = 30 A
1.1
1.4
gFS
VDS = 12 V, ID = 15 A
119
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
114
Total Gate Charge
QG(TOT)
26
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
Gate Resistance
3923
VGS = 0 V, f = 1 MHz, VDS = 12 V
2537
pF
2.9
VGS = 4.5 V, VDS = 12 V; ID = 30 A
nC
10.7
5.8
QG(TOT)
VGS = 10 V, VDS = 12 V; ID = 30 A
56
nC
RG
TA = 25°C
1.0
W
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
17.6
VGS = 4.5 V, VDD = 12 V, ID = 15 A,
RG = 3.0 W
tf
55.1
ns
29.4
9.96
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
11.3
VGS = 10 V, VDD = 12 V,
ID = 15 A, RG = 3.0 W
tf
44.2
ns
39.2
7.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 2.0 A
TJ = 25°C
0.38
TJ = 125°C
0.297
0.6
V
61.3
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
30.4
ns
30.9
66
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4H013NF
TYPICAL CHARACTERISTICS
VGS = 10 V to 3.0 V
VGS = 2.8 V
160
140
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
160
120
100
VGS = 2.6 V
80
60
40
VGS = 2.4 V
120
100
80
TJ = 125°C
60
TJ = 25°C
40
20
20
VGS = 2.0 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
2.5
2.0
1.5
1.0
0.5
0
3
4
5
6
7
8
9
10
VGS, GATE VOLTAGE (V)
2.5
3.0
3.5
4.0
1.2
VGS = 4.5 V
1.1
1.0
TJ = 25°C
0.9
0.8
VGS = 10 V
0.7
0.6
20
40
60
80
100
140
120
160
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1E−01
ID = 30 A
VGS = 10 V
TJ = 150°C
1E−02
TJ = 125°C
−IDSS, LEAKAGE (A)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
2.0
Figure 2. Transfer Characteristics
3.0
1.5
1E−03
1.4
1.3
TJ = 85°C
1E−04
1.2
1.1
1E−05
1.0
0.9
0.8
0.7
−50
1.5
Figure 1. On−Region Characteristics
TJ = 25°C
ID = 30 A
1.6
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
3.5
1.7
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4.0
2
TJ = −55°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
VDS ≤ 10 V
140
TJ = 25°C
1E−06
1E−07
−25
0
25
50
75
100
125
150
5
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
25
NTMFS4H013NF
TYPICAL CHARACTERISTICS
−VGS, GATE−TO−SOURCE VOLTAGE (V)
5000
C, CAPACITANCE (pF)
4500
Ciss
4000
3500
3000
Coss
TJ = 25°C
VGS = 12 V
f = 1 MHz
2500
2000
1500
1000
500
0
Crss
0
5
10
15
20
25
QT
8
6
Qgs
4
Qgd
TJ = 25°C
VDS = 12 V
ID = 30 A
2
0
0
8
16
24
32
40
56
48
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
160
1000
VDS = 12 V
ID = 15 A
VGS = 10 V
td(off)
IS, SOURCE CURRENT (A)
t, TIME (ns)
10
tf
100
tr
td(on)
10
140
120
TJ = 125°C
100
TJ = 25°C
80
60
TJ = −55°C
40
20
0
1
1
10
0.7
0.8
0.9
1.0
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
1 ms
10 ms
0 V ≤ VGS ≤ 10 V
Single Pulse
TA = 25°C
TJ = 150°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
dc
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
0.6
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
10
0.01
0.5
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
0.1
0.4
RG, GATE RESISTANCE (W)
1000
1
0.3
100
100
180
160
140
ID = 33 A
120
100
80
60
40
20
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
150
NTMFS4H013NF
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
50% Duty Cycle
10 20%
10%
5%
2%
1%
1
PCB Cu Area 645.16 mm2
PCB Cu thk 2 oz
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
100
10
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
1000
250
ID, DRAIN CURRENT (A)
GFS, TRANSCONDUCTANCE (S)
300
200
150
100
100
10
50
1
0
0
20
40
60
80
100
120
140
1E−07
1E−06
1E−05
1E−04
1E−03
ID, DRAIN CURRENT (A)
PULSE WIDTH (sec)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
1E−02
ORDERING INFORMATION
Package
Shipping†
NTMFS4H013NFT1G
SO8−FL
(Pb-Free)
1500 / Tape & Reel
NTMFS4H013NFT3G
SO8−FL
(Pb-Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
D
H13NF
AYWZZ
D
D
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5
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
NTMFS4H013NF
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE K
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
C
e
SEATING
PLANE
DETAIL A
A
0.10 C
DETAIL A
3X
4X
1.270
0.750
4X
b
0.10
C A B
0.05
c
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
SOLDERING FOOTPRINT*
SIDE VIEW
8X
3X
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.30
5.15
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
1.000
e/2
L
1
0.965
4
1.330
K
2X
0.905
2X
0.495
E2
PIN 5
(EXPOSED PAD)
G
L1
M
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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NTMFS4H013NF/D
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