Xenon Flash Light IGBT Application Note Hyper Device Division March. 2014 Agenda 1. Operating Precautions 2. Recommended Circuit Example 3. Evaluation Board Data Agenda 1. Operating Precautions 2. Recommended Circuit Example 3. Evaluation Board Data Operating Precautions Please note the followings when you use the devices because flash IGBTs handle high current. Please evaluate the following points when designing. a. b. c. d. ICP precautions dv/dt precautions dv/dt adjustments Wiring precautions a. ICP precautions The ICP, collector current peak is restricted by VGE, gate-emitter voltage. Please use the device within the ICP-VGE safe operation area described in each product’s specification. Please note that the ICP is also restricted by the main condenser capacity. Operating waveform Collector Current Peak ICP Gate Signal Collector-Emitter Voltage VCE Collector Current IC Example: TIG065E8’s ASO ※Left chart shows the ASO for single-shot pulse. Considering heat generation, please use the device with channel temperature Tch≦150℃ in continuous operating b. dv/dt precautions Please use the device with 400V/μs or less of dv/dt , inclination of collectoremitter voltage in turn-off section. Using with dv/dt>400V/μs is not guaranteed. Operating waveform Expanded waveform in Turn-off section Gate Signal ⊿VCE Collector-Emitter Voltage VCE ⊿ｔ=100ns Collector Current IC Turn-off section [Definition of dv/dt] Max.⊿VCE/⊿ｔ shall be dv/dt in turn-off section. c. dv/dt adjustments Please adjust the gate series resistance RG to keep dv/dt to 400V/μs or less. There is no restriction for Rg. Though the dv/dt-Rg dependency differs according to the mount conditions, for your reference, we provide the dv/dt-Rg dependency graphs in each product’s specification. Example：TIG065E8’s dv/dt-Rg dependency graph Measurement condition VCC=320V,Ic=100A 600 dv/dt[V/usec] 550 500 450 400 350 300 250 200 100 150 200 250 Rg[Ω] 300 350 400 d. Wiring precautions If the wiring resistance between IGBT’s emitter terminal and GND is high, there will be rise in emitter terminal potential and lack in actual gate voltage during high current operation. This may cause the breakdown of IGBT. Flash Unit Application Circuit VCC Gate Voltage during high current operation will be: VGE － IC×RE Xe TC IC CM + IGBT GND VDD Wiring resistance RE gate series resistance Rg VGE GND Agenda 1. Operating Precautions 2. Recommended Circuit Example 3. Evaluation Board Data Recommended Circuit Example VCC ①High current path should be thick and short Xe TC IC CM VDD + IG ②Keep low impedance between IGBT-GND (3mΩ or less is recommended) gate series resistance Rg IGBT GND VGE GND ③Place IGBT & driver near by VCC Xe TC Recommended Circuit CM VDD + gate series resistance Rg IGBT GND GND Agenda 1. Operating Precautions 2. Recommended Circuit Example 3. Evaluation Board Data Evaluation Board TIG065E8 XE+ CM+ XE+ TC+ TC+ TC- XE- VDD VCC XE- TRG CM+ CM- TIG065E8 82⇒160 TC- [Conditions] VCC=300V(MAX320V) VDD=2.5～4.0V TRG=VDD TND724M CM- GND TIG065E8 Measured Data Pulse width in 30us operation 10us/div Turn-on expanded waveform 200ns/div VCM:50V/div VCM:50V/div VCE:50V/div VCE:50V/div VGE:2V/div VGE:2V/div Pw=30us Turn-off expanded waveform 200ns/div dv/dt=550V/us at RG=150Ω: This is out of guarantee. RG change is needed. Turn-off expanded waveform 200ns/div dv/dt=350V/us is down at RG=270Ω: This is the recommended level. VCE toｆｆ VCE toｆｆ dv/dt=550V/ns dv/dt=310V/ns RG=270Ω(Recommended Condition)