Si7401DN Datasheet

Si7401DN
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (Ω)
ID (A)
0.021 at VGS = – 4.5 V
– 11
0.028 at VGS = – 2.5 V
– 9.8
0.034 at VGS = – 1.8 V
– 8.9
• TrenchFET® Power MOSFETS: 1.8-V Rated
• New PowerPAK® Package
– Low Thermal Resistance, RthJC
– Low 1.07-mm Profile
Pb-free
Available
RoHS*
COMPLIANT
APPLICATIONS
• Load/Power Switching In Cell Phones and Pagers
• PA Switch for Cellular Devices
• Battery Operated Systems
PowerPAK 1212-8
S
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
D
5
P-Channel MOSFET
Bottom View
Ordering Information: Si7401DN-T1
Si7401DN-T1–E3 (Lead (Pb)–free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
TA = 25 °C
TA = 85 °C
Continuous Drain Current (TJ = 150 °C)a
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25 °C
TA = 85 °C
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
PD
10 secs
Steady State
– 20
±8
V
– 11
– 8.2
– 7.3
– 5.2
– 30
– 3.2
3.8
2.0
TJ, Tstg
– 1.3
1.5
0.8
– 55 to 150
260
b,c
Soldering Recommendations
Unit
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t ≤ 10 sec
Steady State
Steady State
RthJA
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
°C/W
Maximum Junction-to-Case
RthJC
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71423
S-51210–Rev. B, 27-Jun-05
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Si7401DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Condition
Min
Typ
Gate Threshold Voltage
– 0.45
Max
Unit
Static
VGS(th)
VDS = VGS, ID = – 2 mA
– 1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
IDSS
VDS = – 20 V, VGS = 0 V
–1
Zero Gate Voltage Drain Current
VDS = – 20 V, VGS = 0 V, TJ = 85 °C
–5
On-State Drain Currenta
ID(on)
VDS ≤ – 5 V, VGS = – 4.5 V
VGS = – 4.5 V, ID = – 11 A
0.017
0.021
rDS(on)
VGS = – 2.5 V, ID = – 9.8 A
0.022
0.028
VGS = – 1.8 V, ID = – 2 A
0.027
0.034
Drain-Source On-State
Resistancea
Diode Forward Voltage
a
– 30
A
gfs
VDS = – 15 V, ID = – 11 A
31
VSD
IS = – 3.2 A, VGS = 0 V
– 0.8
– 1.2
29
44
Forward Transconductancea
µA
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
VDS = – 10 V, VGS = – 4.5 V, ID = – 11 A
23
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
5.2
tr
Turn-Off DelayTime
5.9
35
VDD = – 10 V, RL = 10 Ω
ID ≅ – 1 A, VGEN = – 4.5 V, RG = 6 Ω
45
70
130
195
95
140
IF = – 3.2 A, di/dt = 100 A/µs
30
60
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
30
30
VGS = 5 thru 2 V
25
20
I D – Drain Current (A)
I D – Drain Current (A)
25
15
1.5 V
10
5
20
15
10
TC = 125 °C
5
25 °C
– 55 °C
1V
0
0
1
2
3
VDS – Drain-to-Source Voltage (V)
Output Characteristics
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2
4
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS – Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71423
S-51210–Rev. B, 27-Jun-05
Si7401DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
0.06
5000
4000
0.04
C – Capacitance (pF)
r DS(on) – On-Resistance (Ω )
0.05
VGS = 1.8 V
0.03
VGS = 2.5 V
0.02
VGS = 4.5 V
Ciss
3000
2000
1000
0.01
0.00
Coss
Crss
0
0
5
10
15
20
25
30
0
4
ID – Drain Current (A)
8
16
20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
5
VDS = 10 V
ID = 11 A
4
3
2
1
7
14
21
28
1.2
1.0
0.8
0.6
- 50
0
0
VGS = 4.5 V
ID = 11 A
1.4
rD S(on) – On–Resistance
(Normalized)
V GS – Gate-to-Source Voltage (V)
12
35
- 25
0
25
50
75
100
125
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.06
30
rDS(on) – On–Resistance (Ω)
I S – Source Current (A)
0.05
TJ = 150 °C
10
TJ = 25 °C
ID = 11 A
0.04
0.03
0.02
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71423
S-51210–Rev. B, 27-Jun-05
1.2
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si7401DN
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.4
50
ID = 2 mA
40
0.2
Power (W)
V GS(th) Variance (V)
0.3
0.1
30
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
TJ – Temperature (°C)
125
150
0
0.01
Threshold Voltage
0.1
1
10
Time (sec)
100
600
Single Pulse Power, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
4. Surface Mounted
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71423.
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Document Number: 71423
S-51210–Rev. B, 27-Jun-05
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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