Si7116DN Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.0078 @ VGS = 10 V 16.4 0.010 @ VGS = 4.5 V 14.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized D 100% Rg Tested Qg (Typ) 15 S D Synchronous Rectification D Intermediate Switch D Synchronous Buck 3.30 mm 1 COMPLIANT APPLICATIONS PowerPAK 1212-8 3.30 mm RoHS S D 2 S 3 G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: Si7116DN-T1—E3 (Lead (Pb)-Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current IS Avalanche Current L = 0.1 0 1 mH Avalanche Energy TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range 8.4 60 A 3.2 IAS 1.3 15 EAS PD 10.5 13.1 IDM Continuous Source Current (Diode Conduction)a V 16.4 ID Unit 11 mJ 3.8 1.5 2.0 0.8 TJ, Tstg –55 to 150 Soldering Recommendations (Peak Temperature)b,c W _C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 24 33 65 81 1.9 2.4 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73139 S-51412—Rev. C, 01-Aug-05 www.vishay.com 1 Si7116DN Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min 1.5 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 mA 2.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 40 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 55_C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 40 A VGS = 10 V, ID = 16.4 A 0.0065 0.0078 VGS = 4.5 V, ID = 14.5 A 0.0083 0.010 gfs VDS = 15 V, ID = 16.4 A 68 VSD IS = 3.2 A, VGS = 0 V 0.8 1.2 15 23 VDS = 20 V, VGS = 4.5 V, ID = 16.4 A 6.7 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate-Resistance Rg Turn-On Delay Time f = 1 MHz 1.4 2.1 td(on) 10 15 tr 10 15 36 55 10 15 Rise Time Turn-Off Delay Time nC 5.1 0.7 VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 3.2 A, di/dt = 100 A/ms 30 60 Body Diode Reverse Recovery Charge Qrr IF = 3.2 A, di/dt = 100 A/ms 26 52 W ns nc Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 I D – Drain Current (A) I D – Drain Current (A) 50 40 30 20 10 40 30 20 TC = 125_C 10 3V 25_C –55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) Document Number: 73139 S-51412—Rev. C, 01-Aug-05 Si7116DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2400 0.010 2000 VGS = 4.5 V C – Capacitance (pF) r DS(on) – On-Resistance ( W ) On-Resistance vs. Drain Current 0.012 0.008 VGS = 10 V 0.006 0.004 Ciss 1600 1200 800 Coss 0.002 400 0.000 Crss 0 0 10 20 30 40 50 60 0 5 15 20 25 30 35 40 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 1.8 10 VDS = 20 V ID = 16.4 A 8 VGS = 10 V ID = 16.4 A 1.6 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 10 6 4 2 1.4 1.2 1.0 0.8 0 0 5 10 15 20 25 30 0.6 –50 35 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.020 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 60 TJ = 150_C 10 TJ = 25_C 1 0.0 0.016 ID = 16.4 A 0.012 0.008 0.004 0.000 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 73139 S-51412—Rev. C, 01-Aug-05 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7116DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-to-Ambient 0.4 50 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 40 –0.0 –0.2 –0.4 30 20 –0.6 10 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 TJ – Temperature (_C) 10 100 600 Time (sec) Safe Operating Area IDM Limited 100 *Limited by rDS(on) P(t) = 0.0001 I D – Drain Current (A) 10 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73139 S-51412—Rev. C, 01-Aug-05 Si7116DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73139. Document Number: 73139 S-51412—Rev. C, 01-Aug-05 www.vishay.com 5