Si5463EDC Datasheet

Si5463EDC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.062 at VGS = - 4.5 V
- 5.1
0.068 at VGS = - 3.6 V
- 4.9
0.085 at VGS = - 2.5 V
- 4.4
0.120 at VGS = - 1.8 V
- 3.7
• Halogen-free According to IEC 61249-2-21
Available
• ESD Protectedb 5000 V
1206-8 ChipFET ®
S
1
D
D
D
D
D
D
G
Marking Code
G
LB
5.4 kΩ
XX
Lot Traceability
and Date Code
S
Part #
Code
Bottom View
D
Ordering Information: Si5463EDC-T1-E3 (Lead (Pb)-free)
Si5463EDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
± 12
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TA = 85 °C
Continuous Source Currenta
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 85 °C
PD
- 3.8
- 3.7
- 2.7
- 15
- 1.9
- 1.0
2.3
1.25
1.2
0.65
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 5.1
IDM
Pulsed Drain Current
Soldering Recommendations (Peak Temperature)
ID
- 55 to 150
c, d
Unit
A
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
45
55
84
100
20
25
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. When using HBM. The MM rating is 300 V.
c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71364
S09-0129-Rev. D, 02-Feb-09
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1
Si5463EDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.45
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
a
Forward Transconductance
Diode Forward Voltage
a
VDS = - 16 V, VGS = 0 V
-1
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
-5
VDS ≤ - 5 V, VGS = - 4.5 V
RDS(on)
V
± 1.5
µA
- 15
A
VGS = - 4.5 V, ID = - 4.0 A
0.051
0.062
VGS = - 3.6 V, ID = - 3.5 A
0.056
0.068
VGS = - 2.5 V, ID = - 3.0 A
0.070
0.085
0.120
VGS = - 1.8 V, ID = - 1.5 A
0.100
gfs
VDS = - 5 V, ID = - 4.0 A
10
VSD
IS = - 1.0 A, VGS = 0 V
- 0.75
- 1.2
9.7
15
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.0 A
2.7
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
nC
Gate-Drain Charge
Qgd
1.4
Turn-On Delay Time
td(on)
1.85
2.5
3.2
4.5
1.9
2.5
3.2
4.5
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
15
2.5 V
TC = - 55 °C
VGS = 4.5 thru 3 V
12
I D - Drain Current (A)
I D - Drain Current (A)
12
9
2V
6
3
25 °C
125 °C
9
6
3
1.5 V
1 V, 0.5 V
0
0
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2
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
3.0
Document Number: 71364
S09-0129-Rev. D, 02-Feb-09
Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2000
0.20
1500
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.25
VGS = 1.8 V
0.15
0.10
VGS = 2.5 V
VGS = 3.6 V
Ciss
1000
Coss
500
0.05
VGS = 4.5 V
Crss
0
0.00
0
3
6
9
12
0
15
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
12
1.6
VGS = 4.5 V
ID = 4.0 A
VDS = 10 V
ID = 4.0 A
6
3
(Normalized)
1.4
9
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
12
1.2
1.0
0.8
0.6
- 50
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.20
20
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.0
0.15
ID = 4.0 A
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71364
S09-0129-Rev. D, 02-Feb-09
1.2
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
40
ID = 250 µA
0.2
Power (W)
VGS(th) Variance (V)
0.3
0.1
30
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
10-3
150
10 -2
10-1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
1000
100
600
10
20
10 000
1000
800
100
I GSS (µA)
I GSS (µA)
TA = 25 °C
600
400
10
150 °C
1
0.1
25 °C
0.01
200
0.001
0
0
2
4
6
8
10
12
0.0001
0.10
VGS - Gate-to-Source Voltage (V)
1
VGS - Gate-to-Source Voltage (V)
Gate-Source Voltage vs. Gate Current
Gate-Source Voltage vs. Gate Current
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 71364
S09-0129-Rev. D, 02-Feb-09
Si5463EDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71364.
Document Number: 71364
S09-0129-Rev. D, 02-Feb-09
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Revision: 02-Oct-12
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Document Number: 91000