MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT Datasheet

MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
3
2
• Solder dip 260 °C, 40 s
1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-247AD (TO-3P)
PIN 1
PIN 2
PIN 3
CASE
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
40 A
VRRM
35 V, 45 V, 50 V, 60 V
IFSM
400 A
VF
0.55 V, 0.60 V
Case: TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
TJ max.
175 °C
Package
TO-247AD
Diode variations
Common cathode
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current (fig. 1)
IF(AV)
40
A
Non-repetitive avalanche energy per diode 
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
400
A
V
Peak repetitive reverse surge current per diode (1)
IRRM
2.0
1.0
A
Peak non-repetitive reverse energy (8/20 μs waveform)
ERSM
30
25
mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
VC
Voltage rate of change at (rated VR)
Operating junction temperature range
Storage temperature range
25
kV
dV/dt
10 000
V/μs
TJ
-65 to +175
°C
TSTG
-65 to +175
°C
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
Revision: 17-Aug-15
Document Number: 88794
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 20 A
IF = 40 A
TYP.
MAX.
TJ = 25 °C
IF = 20 A TJ = 125 °C
Maximum instantaneous forward voltage
per diode (1)
MBR40H35PT
MBR40H45PT
SYMBOL
VF
UNIT
TYP.
MAX.
-
0.63
-
0.69
0.49
0.55
0.56
0.60
-
0.73
-
0.83
IF = 40 A TJ = 125 °C
0.62
0.66
0.68
0.72
TJ = 25 °C
TJ = 125 °C
9.0
150
25
6.0
150
25
Maximum reverse current at rated VR
per diode (2)
TJ = 25 °C
MBR40H50PT
MBR40H60PT
IR
V
μA
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL MBR40H35PT
Thermal resistance, junction to case per diode
MBR40H45PT MBR40H50PT MBR40H60PT
RJC
1.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
MBR40H45PT-E3/45
6.13
45
30/tube
Tube

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
400
45
Peak Forward Surge Current (A)
Average Forward Current (A)
40
35
30
25
20
15
10
5
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
(JEDEC Method)
300
200
100
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
175
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 17-Aug-15
Document Number: 88794
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
10 000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 150 °C
TJ = 25 °C
1
TJ = 125 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
MBR40H35PT, MBR40H45PT
MBR40H50PT, MBR40H60PT
0.01
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.9
0.8
0.7
0.1
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Leakage
Current (mA)
10
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
TJ = 150 °C
10
1
TJ = 125 °C
0.1
MBR40H35PT, MBR40H45PT
MBR40H50PT, MBR40H60PT
0.01
0.001
TJ = 25 °C
0.1
0.01
0.0001
0
20
40
60
80
1
100
0.1
Percent of Rated Peak Reverse Voltage (%)
1
10
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.645 (16.4)
0.625 (15.9)
0.245 (6.2)
0.225 (5.7)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.078 (1.98) REF.
10
0.170
(4.3)
0.840 (21.3)
0.142 (3.6)
0.138 (3.5)
0.820 (20.8)
1
2
10° TYP.
Both Sides
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.160 (4.1)
0.140 (3.5)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.795 (20.2)
0.775 (19.6)
0.048 (1.22)
0.044 (1.12)
0.225 (5.7)
0.205 (5.2)
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 2
PIN 3
CASE
Revision: 17-Aug-15
Document Number: 88794
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000