Si7407DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET® Power MOSFETS: 1.8 V Rated • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • Ultra-Low RDS(on) Available RoHS* COMPLIANT APPLICATIONS • Load Switch • PA Switch • Battery Switch PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 S 2 S S 3 G 4 D 8 D 7 D 6 G D 5 Bottom View Ordering Information: Si7407DN-T1 D Si7407DN-T1-E3 (Lead (Pb)-free) Si7407DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA = 25 °C TA = 85 °C Continuous Drain Current (TJ = 150 °C)a ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 85 °C Maximum Power Dissipationa Operating Junction and Storage Temperature Range PD 10 s Steady State - 12 ±8 V - 15.6 - 11.2 - 9.9 - 7.2 - 30 - 3.2 3.8 2.0 TJ, Tstg - 1.3 1.5 0.8 - 55 to 150 260 Soldering Recommendationsb, c Unit A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 s Steady State Steady State RthJA Typical 26 65 1.9 Maximum 33 81 2.4 Unit °C/W Maximum Junction-to-Case RthJC Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71912 S-80581-Rev. D, 17-Mar-08 www.vishay.com 1 Si7407DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.40 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 400 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistance a Diode Forward Voltage a V nA VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 85 °C -5 VDS ≤ - 5 V, VGS = - 4.5 V µA - 30 A VGS = - 4.5 V, ID = - 15.6 A 0.009 0.012 VGS = - 2.5 V, ID = - 13.5 A 0.013 0.016 VGS = - 1.8 V, ID = - 5 A 0.019 0.024 gfs VDS = - 6 V, ID = - 15.6 A 52 VSD IS = - 3.2 A, VGS = 0 V - 0.7 - 1.2 39 59 RDS(on) Forward Transconductancea - 1.0 ± 100 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDS = - 6 V, VGS = - 4.5 V, ID = - 15.6 A 11 30 VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off DelayTime Fall Time tf Source-Drain Reverse Recovery Time trr nC 6 45 50 75 200 300 165 250 60 90 IF = - 3.2 A, di/dt = 100 A/µs ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 30 30 VGS = 5 thru 2 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 1.5 V 15 10 5 20 15 10 TC = 125 °C 5 25 °C 1V - 55 °C 0 0 1 2 3 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 4 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71912 S-80581-Rev. D, 17-Mar-08 Si7407DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5000 4000 0.03 VGS = 1.8 V 0.02 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.04 VGS = 2.5 V 3000 2000 Coss Crss 0.01 1000 VGS = 4.5 V 0.00 0 0 5 10 15 20 25 30 0 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 12 1.3 VDS = 6 V ID = 15.6 A 4 VGS = 4.5 V ID = 15.6 A 3 2 1 (Normalized) 1.2 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 On-Resistance vs. Drain Current 5 1.1 1.0 0.9 0 0 9 18 27 36 0.8 - 50 45 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.04 R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.0 - 25 Qg - Total Gate Charge (nC) 30 I S - Source Current (A) 2 0.03 ID = 15.6 A 0.02 ID = 5 A 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71912 S-80581-Rev. D, 17-Mar-08 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7407DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.4 50 0.3 40 0.2 Power (W) VGS(th) Variance (V) ID = 250 µA 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* IDM Limited 1 ms I D - Drain Current (A) 10 10 ms 1 ID(on) Limited 100 ms 1s 10 s 0.1 DC TC = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71912 S-80581-Rev. D, 17-Mar-08 Si7407DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71912. Document Number: 71912 S-80581-Rev. 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