Si7909DN Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 7.7 0.048 at VGS = - 2.5 V - 6.8 0.068 at VGS = - 1.8 V - 5.7 • Halogen-free Option Available • TrenchFET® Power MOSFETS: 1.8 V Rated • New Low Thermal Resistance PowerPAK® Package • Advanced High Cell Density Process • Ultra-Low RDS(on), and High PD Capability RoHS COMPLIANT APPLICATIONS • • • • PowerPAK 1212-8 Load Switch PA Switch Battery Switch Bi-Directional Switch S1 S1 3.30 mm S2 3.30 mm 1 G1 2 S2 3 G2 4 D1 8 G1 D1 G2 7 D2 6 D2 5 Bottom View D2 D1 Ordering Information: Si7909DN-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si7909DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA = 25 °C TA = 85 °C Continuous Drain Current (TJ = 150 °C)a ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 85 °C Maximum Power Dissipationa Operating Junction and Storage Temperature Range PD 10 s Steady State - 12 ±8 V - 7.7 - 5.5 - 5.3 - 3.8 - 20 - 2.3 2.8 1.5 TJ, Tstg - 1.1 1.3 0.85 - 55 to 150 260 Soldering Recommendationsb, c Unit A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 s Steady State Steady State RthJA Typical 35 75 4 Maximum 44 94 5 Unit °C/W Maximum Junction-to-Case RthJC Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71996 S-81544-Rev. D, 07-Jul-08 www.vishay.com 1 Si7909DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.40 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 700 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 7.7 A 0.031 0.037 RDS(on) VGS = - 2.5 V, ID = - 6.8 A 0.040 0.048 VGS = - 1.8 V, ID = - 3.0 A 0.057 0.068 gfs VDS = - 6 V, ID = - 7.7 A 17 VSD IS = - 2.3 A, VGS = 0 V - 0.7 - 1.2 15.5 24 Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltage a - 1.0 V ± 100 nA VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 85 °C -5 µA - 20 A Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDS = - 6 V, VGS = - 4.5 V, ID = - 7.7 A 4.3 25 VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off DelayTime Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.5 IF = - 2.3 A, dI/dt = 100 A/µs 40 45 70 90 135 85 130 70 110 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 20 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 2V 12 8 1.5 V 4 12 8 TC = 125 °C 4 25 °C 1V - 55 °C 0 0 1 2 3 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71996 S-81544-Rev. D, 07-Jul-08 Si7909DN Vishay Siliconix TA = 25 °C, unless otherwise noted 0.12 2400 0.09 1800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω ) TYPICAL CHARACTERISTICS VGS = 1.8 V 0.06 VGS = 2.5 V VGS = 4.5 V Ciss 1200 Coss 600 0.03 Crss 0 0.00 0 4 8 12 16 20 0 4 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 12 1.3 VDS = 6 V ID = 7.7 A VGS = 4.5 V ID = 7.7 A 1.2 3 2 1 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 2 1.1 1.0 0.9 0 0 4 8 12 16 0.8 - 50 20 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.12 20 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.10 10 TJ = 150°C TJ = 25°C ID = 7.7 A 0.08 ID = 3 A 0.06 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71996 S-81544-Rev. D, 07-Jul-08 5 www.vishay.com 3 Si7909DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.4 50 ID = 700 µA 40 0.2 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 DC TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-To-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = P DMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71996 S-81544-Rev. D, 07-Jul-08 Si7909DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71996. Document Number: 71996 S-81544-Rev. 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