Si7858DP Datasheet

Si7858DP
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
12
rDS(on) (W)
ID (A)
0.003 @ VGS = 4.5 V
29
0.004 @ VGS = 2.5 V
23
APPLICATIONS
D Low Output Voltage, High Current
Synchronous Rectifiers
PowerPAK SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
G
4
D
8
D
7
D
S
6
D
5
N-Channel MOSFET
Bottom View
Ordering Information: Si7858DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
12
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current (10 ms Pulse Width)
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
18
23
IDM
Continuous Source Current (Diode Conduction)a
V
29
ID
14
A
60
4.5
1.6
5.4
1.9
3.4
1.2
TJ, Tstg
Unit
W
_C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Case (Drain)
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
18
23
50
65
1.0
1.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71832
S-31727—Rev. B, 18-Aug-03
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Si7858DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VGS(th)
VDS = VGS, ID = 250 mA
0.6
0.95
1.3
V
IGSS
VDS = 0 V, VGS = "8 V
"100
nA
VDS = 9.6 V, VGS = 0 V
1
VDS = 9.6 V, VGS = 0 V, TJ = 55_C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS w 5 V, VGS = 4.5 V
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
30
mA
A
VGS = 4.5 V, ID = 29 A
0.0024
0.003
VGS = 2.5 V, ID = 23 A
0.0031
0.004
gfs
VDS = 6 V, ID = 29 A
130
VSD
IS = 2.9 A, VGS = 0 V
0.75
1.1
40
60
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
nC
6.7
9.2
1.4
2.3
td(on)
40
60
tr
40
60
140
210
70
100
50
80
Rise Time
Turn-Off Delay Time
VDS = 6 V, VGS = 4.5 V, ID = 29 A
0.5
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, di/dt = 100 A/ms
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
VGS = 5 thru 2 V
50
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
10
40
30
TC = 125_C
20
25_C
10
1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
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2
3.0
0
0.0
-55_C
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Document Number: 71832
S-31727—Rev. B, 18-Aug-03
Si7858DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
7500
0.004
6000
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
On-Resistance vs. Drain Current
0.005
VGS = 2.5 V
0.003
VGS = 4.5 V
0.002
0.001
Ciss
4500
3000
Coss
Crss
1500
0.000
0
0
10
20
30
40
50
60
0
2
ID - Drain Current (A)
Gate Charge
8
10
12
On-Resistance vs. Junction Temperature
1.6
VDS = 6 V
ID = 25 A
4
r DS(on) - On-Resistance ( W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
6
VDS - Drain-to-Source Voltage (V)
5
3
2
1
0
0
9
18
27
36
1.2
1.0
0.8
0.6
-50
45
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.015
r DS(on) - On-Resistance ( W )
60
TJ = 150_C
10
TJ = 25_C
0.012
0.009
0.006
ID = 25 A
0.003
0.000
1
0.00
VGS = 4.5 V
ID = 25 A
1.4
Qg - Total Gate Charge (nC)
I S - Source Current (A)
4
0.2
0.4
0.6
0.8
VSD - Source-to-Drain Voltage (V)
Document Number: 71832
S-31727—Rev. B, 18-Aug-03
1.0
1.2
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
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Si7858DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
200
160
ID = 250 mA
-0.0
Power (W)
V GS(th) Variance (V)
0.2
-0.2
-0.4
120
80
-0.6
40
-0.8
-1.0
-50
-25
0
25
50
75
100
125
150
0
0.001
0.01
TJ - Temperature (_C)
0.1
1
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10 - 4
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4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71832
S-31727—Rev. B, 18-Aug-03
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Document Number: 91000
Revision: 18-Jul-08
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