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Data Sheet
10V Drive Nch MOSFET
R5016FNX
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
TO-220FM
φ3.2
10.0
4.5
1.2
1.3
14.0
2.5
8.0
15.0
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
12.0
2.8
0.8
(1) Gate
(2) Drain
(3) Source
2.54
2.54
0.75
2.6
(1) (2) (3)
 Application
Switching
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
R5016FNX
 Inner circuit
Bulk
500

 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
VGSS
ID *3
∗1
(1) Gate
(2) Drain
(3) Source
Limits
Unit
500
30
V
V
16
A
Pulsed
Continuous
IDP
IS
*1
*3
64
16
A
A
Pulsed
ISP
*1
64
A
8
17.1
50
A
mJ
W
150
55 to 150
C
C
Limits
2.5
Unit
C / W
Avalanche current
Avalanche energy
IAS *2
EAS *2
Power dissipation
Channel temperature
Range of storage temperature
PD *4
Tch
Tstg
(1)
(2)
(3)
1 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 L
500H, VDD=50V, RG=25, T ch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
 Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c) *
* T C=25°C
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1/6
2011.10 - Rev.A
Data Sheet
R5016FNX
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
-
-
100
nA
VGS=30V, VDS=0V
500
-
-
V
ID=1mA, VGS=0V
IGSS
Drain-source breakdown voltage V(BR)DSS
Conditions
IDSS
-
-
100
A
VDS=500V, VGS=0V
VGS (th)
3.0
-
5.0
V
VDS=10V, ID=1mA
RDS (on)*
-
0.25
0.325

ID=8A, VGS=10V
l Yfs l*
6.2
11
-
S
VDS=10V, ID=8A
Input capacitance
Ciss
-
1700
-
pF
VDS=25V
Output capacitance
Coss
-
1000
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
35
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
35
-
ns
VDD 250V, ID=8.0A
tr *
-
60
-
ns
VGS=10V
Turn-off delay time
td(off) *
-
110
-
ns
RL=31.25
Fall time
tf *
Qg *
Qgs *
Qgd *
-
35
-
ns
RG=10
-
46
-
nC
VDD 250V
-
11
19
-
nC
nC
ID=8.0A
VGS=10V
Min.
Typ.
Max.
VSD *
-
-
trr *
75
100
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Rise time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward voltage
Reverse recovery time
Symbol
Unit
Conditions
1.5
V
IS=16A, VGS=0V
125
ns
IS=16A, VGS=0V
di/dt=100A/s
*Pulsed
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2/6
2011.10 - Rev.A
Data Sheet
R5016FNX
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
FIg.2 Typical Output Characteristics (Ⅱ)
5
20
Ta=25℃
pulsed
Ta=25℃
pulsed
VGS=10V
4
VGS=7V
Drain Current : ID [A]
Drain Current : ID [A]
VGS=7V
VGS=8V
15
VGS=8V
3
VGS=10.0V
VGS=6.5V
VGS=6V
2
10
VGS=6V
5
VGS=5.5V
1
VGS=6.5V
VGS=5.5V
VGS=5V
0
0
0.2
0.4
0.6
0.8
VGS=5V
0
1
0
8
10
Fig.4 Gate Threshold Voltage vs. Channel Temperature
6
VDS=10V
ID=1mA
pulsed
10
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
1
Gate Threshold Voltage : VGS(th) [V]
Drain Currnt : ID [A]
6
Fig.3 Typical Transfer Characteristics
VDS=10V
pulsed
0.1
0.01
2
3
4
5
6
7
5
4
3
2
8
-50
0
Gate-Source Voltage : VGS [V]
50
100
150
Channel Temperature : Tch [℃]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
1
0.6
VGS=10V
pulsed
0.1
1
10
Static Drain-Source On-State Resistance : RDS(on) [Ω]
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
Static Drain-Source On-State Resistance
RDS(on) [Ω]
0.1
4
Drain-Source Voltage : VDS [V]
100
0.001
2
Drain-Source Voltage : VDS [V]
ID=16A
0.4
ID=8A
0.2
0
100
Drain Current : ID [A]
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VGS=10V
pulsed
-50
0
50
100
150
Channel Temperature : T ch [℃]
3/6
2011.10 - Rev.A
Data Sheet
R5016FNX
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Source Current vs. Source-Drain Voltage
100
100
VGS=0V
pulsed
10
10
Source Current : IS [A]
Forward Transfer Admittance
Yfs [S]
VDS=10V
pulsed
1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.1
0.01
0.01
0.1
1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
1
0.1
10
0.01
100
0
0.5
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
1.5
2
Fig.10 Switching Characteristics
1
10000
Ta=25℃
pulsed
0.9
VDD≒250V
VGS=10V
RG=10Ω
Ta=25℃
Pulsed
tf
0.8
1000
0.7
Switching Time : t [ns]
Static Drain-Source On-State Resistance
RDS(on) [Ω]
1
Source-Drain Voltage : VSD [V]
Drain Current : ID [A]
0.6
0.5
0.4
ID=16A
0.3
td(off)
100
0.2
td(on)
tr
10
ID=8A
0.1
0
0
2
4
6
1
8 10 12 14 16 18 20 22 24 26 28 30
0.01
0.1
Gate-Source Voltage : VGS [V]
100
100000
Ta=25℃
VDD=250V
ID=8A
Pulsed
10
10000
8
Capacitance : C [pF]
Gate-Source Voltage : VGS [V]
10
Fig.12 Typical Capacitance vs. Drain-Source Voltage
Fig.11 Dynamic Input Characteristics
12
6
4
Ta=25℃
f=1MHz
VGS=0V
1000
Ciss
Coss
100
Crss
10
2
0
1
Drain Current : ID [A]
0
10
20
30
40
50
1
60
Total Gate Charge : Qg [nC]
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0.01
0.1
1
10
100
1000
Drain-Source Voltage : VDS [V]
4/6
2011.10 - Rev.A
Data Sheet
R5016FNX
Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width
Fig.14 Maximum Safe Operating Area
1000
Ta=25℃
Single Pulse
1
100
Rth(ch-a)=48.9℃/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Drain Current : ID [ A ]
Normalized Transient Thermal Resistance : r(t)
10
0.1
0.01
PW = 100μs
10
PW = 1ms
Operation in this area
is limited by RDS(on)
(VGS = 10V)
1
PW = 10ms
0.1
0.001
Ta=25℃
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
1
10
100
0.01
1000
0.1
1
10
100
1000
Drain-Source Voltage : VDS [ V ]
Pulse width : Pw (s)
Fig.15 Reverse Recovery Time vs. Source Current
1000
Reverse Recovery Time : trr [ns]
Ta=25℃
Vgs=0V
di/dt=100A/us
Pulsed
100
10
0
1
10
100
Source Current : IS [A]
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5/6
2011.10 - Rev.A
Data Sheet
R5016FNX
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
90%
td(off)
tr
ton
tf
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
VG
VGS
ID
VDS
RL
Qg
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
VGS
IAS
VDS
V(BR)DSS
D.U.T.
RG
L
VDD
IAS
VDD
EAS =
Fig.3-1 Avalanche Measurement Circuit
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1
2
L IAS
2
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche Waveform
6/6
2011.10 - Rev.A
Notice
Notes
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R1120A
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