Data Sheet 10V Drive Nch MOSFET RCX330N25 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage VGSS garanteed to be ±30V . 12.0 2.8 0.8 2.54 2.54 2.6 0.75 (1) (2) (3) 4) High package power. Inner circuit Application Switching ∗1 Packaging specifications Package Code Basic ordering unit (pieces) RCX330N25 Type Bulk 500 (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta 25°C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) VDSS VGSS Limits Unit 250 30 V V Continuous ID *3 33 A Pulsed IDP *1 Continuous Pulsed IS ISP *3 132 33 A A *1 132 A IAS EAS *2 A mJ W Avalanche Current Avalanche Energy Power dissipation (Tc=25°C) PD 16.5 74.8 40 Channel temperature Range of storage temperature Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c) Limits 3.13 Unit C / W *2 (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C *3 Limited only by maximum temperature allowed. Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.09 - Rev.A Data Sheet RCX330N25 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR)DSS Min. Typ. Max. Unit - - 100 nA VGS=±30V, VDS=0V 250 - - V ID=1mA, VGS=0V Conditions IDSS - - 10 A VDS=250V, VGS=0V VGS (th) 3 - 5 V VDS=10V, ID=1mA RDS (on)* - 77 105 l Yfs l* 10 - - S ID=16.5A, VDS=10V Input capacitance Ciss - 4500 - pF VDS=25V Output capacitance Coss - 220 - pF VGS=0V Reverse transfer capacitance Crss - 130 - pF f=1MHz Turn-on delay time td(on) * - 50 - ns ID=16.5A, VDD 125V tr * - 200 - ns VGS=10V td(off) * - 120 - ns RL=7.6 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time m ID=16.5A, VGS=10V tf * - 140 - ns RG=10 Total gate charge Qg * - 80 - nC ID=33A, Gate-source charge Gate-drain charge Qgs * Qgd * - 25 27 - nC nC VDD 125V VGS=10V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.5 Unit V Conditions Is=33A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.09 - Rev.A Data Sheet RCX330N25 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 35 35 Ta=25°C Pulsed 30 Ta=25°C Pulsed VGS=10.0V 30 VGS=10.0V VGS=8.0V VGS=8.0V 20 VGS=7.0V 15 25 Drain Current : ID [A] Drain Current : ID [A] 25 20 VGS=7.0V 15 10 10 VGS=6.5V VGS=6.5V 5 VGS=6.0V VGS=6.0V VGS=5.5V 3 4 0 0 0 1 2 0 5 10 20 Drain-Source Voltage : VDS [V] 40 50 Fig.4 Gate Threshold Voltage vs. Channel Temperature 100 6 VDS=10V pulsed VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] 10 Drain Currnt : ID [A] 30 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 5 4 3 0.001 2 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 -50 0 50 100 150 Channel Temperature : Tch [℃] Gate-Source Voltage : VGS [V] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 200 1000 VGS=10V pulsed VGS=10V pulsed 180 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mW] Static Drain-Source On-State Resistance RDS(on) [mW] VGS=5.5V 5 100 160 140 ID=33A 120 100 ID=16.5A 80 60 40 20 10 0.01 0 0.1 1 10 -50 100 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] 3/6 2011.09 - Rev.A Data Sheet RCX330N25 Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VGS=0V pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Source Current : Is [A] Forward Transfer Admittance |Yfs | [S] VDS=10V pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 1 0.1 0.01 0.1 1 10 100 0.0 0.5 Drain Current : ID [A] 1.0 1.5 Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics 0.5 10000 VDD≒125V VGS=10V RG=10Ω Ta=25°C Pulsed 0.4 tf 1000 ID=16.5A 0.3 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=25°C Pulsed ID=33.0A 0.2 td(off) td(on) 100 tr 10 0.1 1 0 0 2 4 6 8 10 12 14 16 18 0.01 20 0.1 1 10 100 Gate-Source Voltage : VGS [V] Drain Current : ID [A] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 10000 14 Ta=25°C VDD=125V ID=33A Pulsed 12 Ciss 10 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 2.0 Source-Drain Voltage : VSD [V] 8 6 1000 Coss 100 4 Crss Ta=25°C f=1MHz VGS=0V 2 10 0 0 10 20 30 40 50 60 70 80 0.01 90 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] 4/6 2011.09 - Rev.A Data Sheet RCX330N25 Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.13 Maximum Safe Operating Area 1000 10 Drain Current : ID [ A ] 100 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse Operation in this area is limited by RDS(on) (VGS = 10V) 10 PW = 100μs 1 PW = 1ms 0.1 PW = 10ms 0.01 0.01 0.1 1 10 100 1 0.1 0.01 0.001 Rth(ch-a)=44.9°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 1000 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) Drain-Source Voltage : VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ta=25°C Single Pulse 5/6 2011.09 - Rev.A Data Sheet RCX330N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A