SiE800DF Datasheet

SiE800DF
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Qgd for Low Switching Losses
• TrenchFET® Power MOSFET
• Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided
Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
ID (A)a
RDS(on) (Ω)
Silicon
Limit
0.0072 at VGS = 10 V
90
50
0.0115 at VGS = 4.5 V
73
50
VDS (V)
30
Package
Qg (Typ.)
Limit
12 nC
Package Drawing
www.vishay.com/doc?73398
PolarPAK
10
D
9
G
8
S
7
S
6
D
6
7
8
9
10
APPLICATIONS
D
D
1
G
2
S
3
D
S
4
D
5
5
Top View
Top surface is connected to pins 1, 5, 6, and 10
S
4
3
G
D
2
1
• VRM
• DC/DC Conversion: High-Side
• Synchronous Rectification
D
G
Bottom View
S
N-Channel MOSFET
For Related Documents
Ordering Information: SiE800DF-T1-E3 (Lead (Pb)-free)
SiE800DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
www.vishay.com/ppg?74414
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
ID
IDM
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
Limit
30
± 20
90 (Silicon Limit)
50a (Package Limit)
50a
20.6b, c
16.5b, c
60
50a
4.3b, c
40
80
104
66
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
TC = 25 °C
TC = 70 °C
PD
W
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
Soldering Recommendations (Peak Temperature)d, e
Notes:
a. Package limited is 50 A.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
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1
SiE800DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t ≤ 10 s
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain Top)a
Steady State
Maximum Junction-to-Case (Source)a, c
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Symbol
RthJA
RthJC (Drain)
RthJC (Source)
Typical
20
1
2.8
Maximum
24
1.2
3.4
Unit
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VGS = 0 V, ID = 250 µA
30
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 9 A
VDS = 15 V, ID = 11 A
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 18.5 A
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 4.5 V, ID = 18.5 A
IS
ISM
VSD
trr
Qrr
ta
tb
TC = 25 °C
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Pulse Diode Forward Current
IS = 10 A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
1.5
V
34.5
- 6.7
2.2
mV/°C
3.0
± 100
1
10
25
V
nA
µA
A
0.006
0.0095
50
1600
750
120
23
12
5.6
3
1.3
20
15
15
8
15
15
25
10
0.8
45
41
21
24
0.0072
0.0115
Ω
S
pF
35
18
1.95
30
25
25
15
25
25
40
15
50
60
1.2
70
65
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
25
VGS = 10 V thru 5 V
50
20
I D - Drain Current (A)
I D - Drain Current (A)
4V
40
30
20
15
10
TC = 125 °C
5
10
25 °C
3V
0
0.0
0.4
0.8
1.2
1.6
- 55 °C
0
1.5
2.0
2.0
VDS - Drain-to-Source Voltage (V)
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.014
2500
0.012
2000
C - Capacitance (pF)
RDS(on) - On-Resistance (mΩ)
2.5
VGS = 4.5 V
0.010
0.008
VGS = 10 V
Ciss
1500
1000
Coss
500
0.006
Crss
0
0.004
0
10
20
30
40
50
0
60
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.8
10
ID = 10.8 A
ID = 18.5 A
1.6
8
VDS = 15 V
6
VDS = 24 V
4
2
1.4
(Normalized)
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
VGS = 10 V
VGS = 4.5 V
1.2
1.0
0.8
0
0
5
10
15
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
20
25
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
RDS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
60
TJ = 150 °C
10
TJ = 25 °C
1
0.0
ID = 10.8 A
0.016
0.012
TA = 125 °C
0.008
TA = 25 °C
0.004
0.2
0.4
0.6
0.8
1.0
0
1.2
2
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
3.0
50
2.6
40
ID = 250 µA
2.2
Power (W)
VGS(th) (V)
4
1.8
30
20
1.4
1.0
- 50
10
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited by RDS(on)*
1 ms
ID - Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
SiE800DF
Vishay Siliconix
120
120
100
100
Power Dissipation (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
60
40
80
60
40
Package Limited
20
20
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
www.vishay.com
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SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 55 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73199.
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Document Number: 73199
S11-0212-Rev. G, 14-Feb-11
Legal Disclaimer Notice
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Revision: 02-Oct-12
1
Document Number: 91000