SiE844DF Datasheet

New Product
SiE844DF
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)e
0.007 at VGS = 10 V
44.5
0.010 at VGS = 4.5 V
37.3
VDS (V)
30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen II Power MOSFET
• Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
Qg (Typ.)
13.1 nC
Package Drawing
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PolarPAK
10
D
9
G
8
S
7
S
6
D
6
7
8
9
10
APPLICATIONS
D
D
1
G
2
S
S
3
4
Top View
D
D
5
5
S
4
G
3
2
•
•
•
•
D
D
VRM, POL
DC/DC Conversion
Server
High-Side Switch
G
1
S
Bottom View
N-Channel MOSFET
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE844DF-T1-E3 (Lead (Pb)-free)
SiE844DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
For Related Documents
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ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Limit
30
± 20
44.5
35.6
20.3a, b
16.3a, b
60
20.8
4.3a, b
25
31
25
16
5.2a, b
3.3a, b
- 55 to 150
260
Unit
V
A
mJ
TC = 25 °C
TC = 70 °C
PD
Maximum Power Dissipation
W
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
°C
Soldering Recommendations (Peak Temperature)c, d
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Based on TC = 25 °C.
Document Number: 69988
S09-1338-Rev. B, 13-Jul-09
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New Product
SiE844DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC (Drain)
RthJC (Source)
t ≤ 10 s
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain Top)
Steady State
Maximum Junction-to-Case (Source)a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Typical
20
4
5.5
Maximum
24
5
7
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS = 0 V, ID = 250 µA
30
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Drain-Source On-State Resistance
a
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 12.1 A
VGS = 4.5 V, ID = 9.7 A
VDS = 15 V, ID = 12.1 A
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 20 A
VDS = 15 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS
ISM
Pulse Diode Forward Currenta
IS = 10 A
VSD
Body Diode Voltage
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ta
Reverse Recovery Fall Time
tb
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
V
30
-6
1
mV/°C
3
± 100
1
10
25
V
nA
µA
A
0.0058
0.0081
65
2150
320
120
29
13.1
6
3.1
1.2
25
10
25
10
10
10
25
10
0.8
30
24
16
14
0.007
0.010
Ω
S
pF
44
20
1.8
40
15
40
15
15
15
40
15
20.8
60
1.2
45
36
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69988
S09-1338-Rev. B, 13-Jul-09
New Product
SiE844DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
20
VGS = 10 V thru 4 V
TC = - 55 °C
16
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
VGS = 3 V
12
8
TC = 125 °C
4
10
TC = 25 °C
VGS = 2 V
0
0.0
0.4
0.8
1.2
1.6
0
0.0
2.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2500
0.010
Ciss
2000
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.009
0.008
0.007
VGS = 10 V
0.006
1500
1000
Coss
500
0.005
Crss
0.004
0
0
10
20
30
40
50
0
60
5
ID - Drain Current (A)
10
20
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.8
ID = 12.1 A
VGS = 10 V, 4.5 V, ID = 12.1 A
1.6
8
VDS = 15 V
6
VDS = 24 V
4
2
1.4
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
15
1.2
1.0
0.8
0
0
6
12
18
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69988
S09-1338-Rev. B, 13-Jul-09
24
30
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
SiE844DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
100
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 12.1 A
TJ = 150 °C
10
0.015
TJ = 125 °C
0.010
TJ = 25 °C
0.005
TJ = 25 °C
0.000
1
0.0
0.2
0.4
0.6
0.8
0
1.0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
50
2.2
40
2.0
Power (W)
V GS(th) (V)
ID = 250 µA
1.8
1.6
30
20
1.4
10
1.2
1.0
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
TJ - Temperature (°C)
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
100 µs
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
BVDSS
TA = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69988
S09-1338-Rev. B, 13-Jul-09
New Product
SiE844DF
Vishay Siliconix
50
25
40
20
30
15
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
5
10
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69988
S09-1338-Rev. B, 13-Jul-09
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New Product
SiE844DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 55 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
Square Wave Pulse Duration (s)
10 -1
1
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Source
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69988.
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Document Number: 69988
S09-1338-Rev. B, 13-Jul-09
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Revision: 02-Oct-12
1
Document Number: 91000