PDF Data Sheet

Analog Devices Welcomes
Hittite Microwave Corporation
NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
www.analog.com
www.hittite.com
THIS PAGE INTENTIONALLY LEFT BLANK
HMC-ALH445
v03.0410
AMPLIFIERS - LOW NOISE - CHIP
1
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 - 40 GHz
Typical Applications
Features
This HMC-ALH445 is ideal for:
Noise Figure: 3.9 dB @ 28 GHz
• Wideband Communication Systems
Gain: 9 dB
• Point-to-Point Radios
P1dB Output Power: +12 dBm @ 28 GHz
• Point-to-Multi-Point Radios
Supply Voltage: +5V @ 45 mA
• Military & Space
Die Size: 1.6 x 1.6 x 0.1 mm
• Test Instrumentation
Functional Diagram
General Description
The HMC-ALH445 is a GaAs MMIC HEMT self-biased,
wideband Low Noise Amplifier die which operates
between 18 and 40 GHz. The amplifier provides
9 dB of gain, 3.9 dB noise figure at 28 GHz and
+12 dBm of output power at 1 dB gain compression
while requiring only 45 mA from a single +5V supply.
The HMC-ALH445 amplifier is ideal for integration into
Multi-Chip-Modules (MCMs) due to its small size.
Electrical Specifi cations*, TA = +25° C, Vdd= +5V
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
18 - 28
8
Typ.
Max.
28 - 40
9
8
5
GHz
10
3.9
Units
dB
Noise Figure
4
4.5
Input Return Loss
10
10
dB
Output Return Loss
15
15
dB
Output Power for 1 dB Compression
12
13
dBm
Supply Current (Idd) (Vdd = 5V)
45
45
mA
dB
*Unless otherwise indicated, all measurements are from probed die
1 - 192
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-ALH445
v03.0410
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 - 40 GHz
14
15
10
5
RESPONSE (dB)
GAIN (dB)
12
10
8
+25C
+85C
- 55C
6
S21
S11
S22
-5
-10
-15
-20
-25
4
-30
18
20
22
24
26 28 30 32 34
FREQUENCY (GHz)
36
38
40
Input Return Loss vs. Frequency
10
-10
-15
-15
-20
-25
+25C
+85C
- 55C
-30
15
20
25
30
35
FREQUENCY (GHz)
40
45
50
Output Return Loss vs. Frequency
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
0
-20
+25C
+85C
- 55C
-25
AMPLIFIERS - LOW NOISE - CHIP
1
Broadband Gain vs. Return Loss
Gain vs. Temperature
-30
-35
-35
18
20
22
24
26 28 30 32 34
FREQUENCY (GHz)
36
38
40
Reverse Isolation vs. Temperature
18
20
22
24
26 28 30 32 34
FREQUENCY (GHz)
36
38
40
Noise Figure vs. Frequency
RETURN LOSS (dB)
-10
+25C
+85C
- 55C
-15
-20
-25
-30
18
20
22
24
26 28 30 32 34
FREQUENCY (GHz)
36
38
40
Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd1 = 5V, Id1 = 45 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 - 193
HMC-ALH445
v03.0410
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 - 40 GHz
AMPLIFIERS - LOW NOISE - CHIP
1
Absolute Maximum Ratings
On-Wafer P1dB vs. Frequency
Drain Bias Voltage
+5.5 Vdc
Drain Bias Current
60 mA
RF Input Power
10 dBm
Thermal Resistance
(channel to die bottom)
201.2 °C/W
Channel Temperature
180 °C
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 194
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-ALH445
v03.0410
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 - 40 GHz
Pad Number
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2, 4
Vdd
Power Supply Voltage for the amplifier. See
assembly for required external components.
3
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
Assembly Diagram
AMPLIFIERS - LOW NOISE - CHIP
1
Pad Descriptions
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
Note 3: Biasable from either side.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 - 195
HMC-ALH445
v03.0410
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 - 40 GHz
AMPLIFIERS - LOW NOISE - CHIP
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
1 - 196
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-ALH445
v03.0410
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 - 40 GHz
1
AMPLIFIERS - LOW NOISE - CHIP
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 - 197