Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC-AUH317 v04.0511 Amplifiers - Linear & Power - Chip 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This HMC-AUH317 is ideal for: Gain: 22 dB • Short Haul / High Capacity Links P1dB: +17.5 dBm • Wireless LAN Bridges Supply Voltage: +4V • Military & Space 50 Ohm Matched Input/Output • E-Band Communication Systems Die Size: 2.65 x 1.6 x 0.05 mm Functional Diagram General Description The HMC-AUH317 is a high dynamic range, three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 81 and 86 GHz. The HMCAUH317 provides 22 dB of gain, and an output power of +17.5 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-AUH317 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1 = Idd2 = 80 mA [2] Parameter Min. Frequency Range Gain 19 Typ. Max. Units 81 - 86 GHz 22 dB Input Return Loss 9 dB Output Return Loss 5 dB Output power for 1dB Compression (P1dB) 17.5 dBm Saturated Output Power (Psat) 19.5 dBm Supply Current (Idd1+Idd2) 160 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA. Products and product information are subject to change without notice. 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-AUH317 v04.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Fixtured Output Power vs. Frequency Linear Gain vs. Frequency 24 GAIN (dB) 22 20 18 16 14 20 3 19 18 17 PSat P1dB 16 15 80 82 84 86 88 90 92 80 82 FREQUENCY (GHz) 86 88 90 92 FREQUENCY (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 OUTPUT RETURN LOSS (dB) 0 INPUT RETURN LOSS (dB) 84 -5 -10 -15 -20 -5 -10 -15 -20 80 82 84 86 88 FREQUENCY (GHz) 90 92 80 82 84 86 88 90 92 FREQUENCY (GHz) Amplifiers - Linear & Power - Chip INPUT RETURN LOSS (dB) 21 Note: Measured Performance Characteristics (Typical Performance at 25°C) Vdd1 = Vdd2 = 4V, Idd1 = 80mA, Idd2 = 80mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-2 HMC-AUH317 v04.0511 Absolute Maximum Ratings Amplifiers - Linear & Power - Chip 3 Reliability Information Nominal 4.0V Supply to GND 0.0V to +4.5V Gate Bias Voltage -0.8V to +0.3V RF Input Power (Vdd = +4.0V) +3 dBm Storage Temperature Max Peak Reflow Temperature -65 to +150 °C 260 °C Junction Temperature to Maintain 1 Million Hour MTTF 180 °C Nominal Junction Temperature (T = 85 °C) 156.1 °C Thermal Resistance (Junction to Die Bottom) 111.0 °C/W Operating Temperature -55 to +85 °C Drain Bias Current (Idd1) 100 mA Drain Bias Current (Idd2) 100 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3-3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. BACKSIDE METALLIZATION: GOLD. 3. BACKSIDE METAL IS GROUND. 4. BOND PAD METALLIZATION: GOLD. 5. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 6. OVERALL DIE SIZE ±.002” 7. DIE THICKNESS IS 0.002” [0.050 mm] 8 TYPICAL BOND PAD IS 0.004” [0.100 mm] SQUARE UNLESS NOTED For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-AUH317 v04.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 3 Vgg1, Vgg2 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. 5, 6 Vdd1, Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3 Amplifiers - Linear & Power - Chip Pad Number 3-4 HMC-AUH317 v04.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Assembly Diagram Amplifiers - Linear & Power - Chip 3 Note 1: Bypass caps should be 100 pF (approximately) single-layer placed no farther than 30 mils from the amplifier. Note 2: Best performance is obtained by minimizing the length of the ribbon, 1.5 by 0.5 mil, on the input and output. 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-AUH317 v04.0511 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.05mm (0.002”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3 Amplifiers - Linear & Power - Chip The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 3-6