HMC797

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HMC797
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HMC797
v02.1011
Amplifiers - Linear & Power - Chip
3
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Typical Applications
Features
The HMC797 is ideal for:
High P1dB Output Power: +28 dBm
• Test Instrumentation
High Psat Output Power: +31 dBm
• Microwave Radio & VSAT
High Gain: 14.5 dB
• Military & Space
High Output IP3: +40 dBm
• Telecom Infrastructure
Supply Voltage: +10 V @ 400 mA
• Fiber Optics
50 Ohm Matched Input/Output
Die Size: 2.89 x 1.55 x 0.1 mm
Functional Diagram
General Description
The HMC797 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC
and 22 GHz. The amplifier provides 14.5 dB of gain,
40 dBm output IP3 and +28 dBm of output power at
1 dB gain compression while requiring 400mA from
a +10V supply. This versatile PA exhibits a positive gain slope from 3 to 21 GHz making it ideal for
EW, ECM, Radar and test equipment applications.
The HMC797 amplifier I/Os are internally matched
to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2 = +3.5V, Idd = 400 mA*
Parameter
Min.
Frequency Range
Typ.
Max.
Min.
DC - 10
Typ.
Max.
Min.
10 - 18
Typ.
Max.
Units
18 - 22
GHz
dB
Gain
13.5
14.5
15.5
Gain Flatness
±0.5
±0.7
±0.4
dB
Gain Variation Over Temperature
0.009
0.01
0.012
dB/ °C
dB
Input Return Loss
16
17
18
Output Return Loss
16
18
17
dB
28
dBm
31
dBm
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
27
28.5
27
28.5
31
31
26.5
Output Third Order Intercept (IP3)
41
40
39
dBm
Noise Figure
3.5
3
3.5
dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400
400
400
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd = 400 mA typical.
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC797
v02.1011
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Gain & Return Loss
Gain vs. Temperature
20
18
16
3
14
-10
12
10
-20
+25C
+85C
-55C
8
-30
6
0
5
10
15
20
25
30
0
4
8
FREQUENCY (GHz)
0
-10
-10
-20
+25C
+85C
-55C
-40
20
24
+25C
+85C
-55C
-20
-30
-40
0
4
8
12
16
20
24
0
4
8
FREQUENCY (GHz)
12
16
20
24
FREQUENCY (GHz)
Noise Figure vs. Frequency
Reverse Isolation vs. Temperature
7
0
-10
6
NOISE FIGURE (dB)
+25C
+85C
-55C
-20
ISOLATION (dB)
16
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
RETURN LOSS (dB)
Input Return Loss vs. Temperature
-30
12
FREQUENCY (GHz)
Amplifiers - Linear & Power - Chip
S21
S11
S22
0
GAIN (dB)
RESPONSE (dB)
10
-30
-40
-50
-60
5
4
3
2
1
-70
0
-80
0
4
8
12
16
FREQUENCY (GHz)
20
24
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-2
HMC797
v02.1011
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
P1dB vs. Temperature
Psat vs. Temperature
34
34
32
Psat (dBm)
P1dB (dBm)
30
28
28
26
24
24
+25C
+85C
-55C
22
0
4
8
12
16
20
24
0
4
8
FREQUENCY (GHz)
16
20
24
20
24
Psat vs. Vdd
34
34
32
32
30
30
P1dB (dBm)
P1dB (dBm)
12
FREQUENCY (GHz)
P1dB vs. Vdd
28
26
28
+10V
+11V
26
+10V
+11V
24
24
22
22
0
4
8
12
16
20
24
0
4
8
FREQUENCY (GHz)
12
16
FREQUENCY (GHz)
Output IP3 vs.
Temperature @ Pout = 18 dBm Tone
Output IP3 vs. Output Power @ 10 GHz
50
45
45
40
40
IP3 (dBm)
50
35
+25C
+85C
-55C
30
300 mA
350 mA
400 mA
35
30
25
25
0
4
8
12
16
FREQUENCY (GHz)
3-3
30
26
22
IP3 (dBm)
Amplifiers - Linear & Power - Chip
3
32
+25C
+85C
-55C
20
24
10
12
14
16
18
20
22
24
OUTPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC797
v02.1011
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Power Compression @ 10 GHz
Power Compression @ 2 GHz
32
24
20
16
12
8
4
0
28
Pout
Gain
PAE
24
16
12
8
4
0
0
3
6
9
12
15
18
21
0
3
6
INPUT POWER (dBm)
12
15
18
21
Power Dissipation
32
6
Pout
Gain
PAE
28
POWER DISSIPATION (W)
Pout (dBm), GAIN (dB), PAE (%)
9
INPUT POWER (dBm)
Power Compression @ 22 GHz
24
20
16
12
8
4
0
5
4
3
2
Max Pdis @ 85C
2 GHz
20 GHz
1
0
0
3
6
9
12
15
18
0
4
INPUT POWER (dBm)
8
12
16
20
INPUT POWER (dBm)
Second Harmonics vs.
Vdd @ Pout = 18 dBm
Second Harmonics vs.
Temperature @ Pout = 18 dBm
70
70
60
+25C
+85C
-55C
50
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
3
20
40
30
20
Amplifiers - Linear & Power - Chip
Pout
Gain
PAE
28
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
32
60
+8V
+10V
+11V
50
40
30
20
10
10
0
0
0
4
8
12
16
FREQUENCY(GHz)
20
24
0
4
8
12
16
20
24
FREQUENCY(GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-4
HMC797
v02.1011
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
3-5
Second Harmonics vs. Pout
70
70
60
60
SECOND HARMONIC (dBc)
Amplifiers - Linear & Power - Chip
3
SECOND HARMONIC (dBc)
Second Harmonics vs.
Idd @ Pout = 18 dBm
300 mA
350 mA
400 mA
50
40
30
20
10
+12 dBm
+14 dBm
+16 dBm
+18 dBm
+20 dBm
+22 dBm
+24 dBm
50
40
30
20
10
0
0
0
4
8
12
16
20
24
0
4
FREQUENCY(GHz)
Absolute Maximum Ratings
8
12
16
20
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+12 Vdc
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
+9
400
Gate Bias Voltage (Vgg2)
Vgg2 = (Vdd -6.5V) to 4.5V. For
Vdd <8.5V, Vgg2 must remain >2V
+10
400
+11
400
RF Input Power (RFIN)
+27 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 69 mW/°C above 85 °C)
4.5 W
Thermal Resistance
(channel to die bottom)
14.5 °C/W
Output Power into VSWR >7:1
29 dBm
Storage Temperature
-65 to 150°C
Operating Temperature
-55 to 85 °C
24
FREQUENCY(GHz)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC797
v02.1011
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Outline Drawing
This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area.
Die Packaging Information
[1]
Standard
Alternate
WP-19 (Waffle Pack)
[2]
[1] Refer to the “Packaging Information” section on our
website for die packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE ±.002”
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Amplifiers - Linear & Power - Chip
3
3-6
HMC797
v02.1011
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Pad Number
Function
Description
3
1
RFIN
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
Amplifiers - Linear & Power - Chip
Pad Descriptions
2
VGG2
Gate control 2 for amplifier. Attach bypass
capacitors per application circuit herein. For nominal
operation +3.5V should be applied to Vgg2.
4, 7
ACG2, ACG4
Low frequency termination. Attach bypass
capacitors per application circuit herein.
3
ACG1
Low frequency termination. Attach bypass
capacitors per application circuit herein.
5
RFOUT & VDD
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6
ACG3
Low frequency termination. Attach bypass
capacitor per application circuit herein.
8
VGG1
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
3-7
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC797
v02.1011
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Assembly Diagram
Application Circuit
Amplifiers - Linear & Power - Chip
3
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 500mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-8
HMC797
v02.1011
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Amplifiers - Linear & Power - Chip
3
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
3-9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC797
v02.1011
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Notes:
Amplifiers - Linear & Power - Chip
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3 - 10