Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB 34% PAE @ Psat = +26 dBm • 802.11a WLAN 11 • HiperLAN WLAN 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal • Access Points Supply Voltage: +3V • UNII & ISM Radios Power Down Capability LINEAR & POWER AMPLIFIERS - SMT Low External Part Count General Description Functional Diagram The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 & HMC415LP3E achieve an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements. Electrical Specifi cations, TA = +25° C, Vs = 3V, Vpd = 3V Parameter Min. Frequency Range Max. Min. 4.9 - 5.1 Gain 18 Gain Variation Over Temperature Max. Min. 5.1 - 5.4 20 0.04 Typ. 18.5 0.05 20.5 0.04 16 0.05 Typ. Max. Units 5.4 - 5.9 GHz 19 dB 0.04 0.05 dB / °C Input Return Loss 10 9 8 dB Output Return Loss 10 12 8 dB 21.5 21.0 dBm 24 dBm 30 dBm Output Power for 1dB Compression (P1dB) Icq = 285 mA Icq = 200 mA 20 Saturated Output Power (Psat) Error Vector Magnitude (54 Mbps OFDM Signal @ +15 dBm Pout) 22.5 22.0 20.5 25.5 Output Third Order Intercept (IP3) 28 31 Icq = 200 mA Noise Figure 11 - 66 Typ. 23.0 22.5 18 26 29 32 27 3.7 % 6 6 6 dB 0.002 / 285 0.002 / 285 0.002 / 285 mA Supply Current (Icq) Vpd = 0V/3V Control Current (Ipd) Vpd = 3V 7 7 7 mA Switching Speed tOn, tOff 45 45 45 ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 24 20 22 20 15 S21 S11 S22 5 16 GAIN (dB) 0 -5 -10 -15 14 12 10 +25 C 8 +85 C 6 -40 C -20 2 -25 3 4 5 6 7 0 4.8 8 5 FREQUENCY (GHz) -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 0 -10 -20 4.8 +25 C +85 C -40 C 5 5.2 5.4 5.6 5.8 5 5.2 5.4 5.6 5.8 6 5.8 6 FREQUENCY (GHz) Psat vs. Temperature 28 26 26 24 24 Psat (dBm) 30 28 22 20 +25 C +85 C -40 C 22 20 +25 C +85 C -40 C 18 16 14 12 10 4.8 6 -15 30 14 5.8 -10 -20 4.8 6 P1dB vs. Temperature 16 5.6 +25 C +85 C -40 C FREQUENCY (GHz) 18 5.4 Output Return Loss vs. Temperature 0 -15 5.2 FREQUENCY (GHz) Input Return Loss vs. Temperature P1dB (dBm) 11 4 LINEAR & POWER AMPLIFIERS - SMT RESPONSE (dB) 18 10 12 5 5.2 5.4 5.6 FREQUENCY (GHz) 5.8 6 10 4.8 5 5.2 5.4 5.6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 67 HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Power Compression @ 5.2 GHz Output IP3 vs. Temperature 40 32 38 Pout (dBm) Gain (dB) PAE (%) 28 36 34 OIP3 (dBm) 24 20 16 30 28 +25 C +85 C 8 24 -40 C 4 22 -8 -6 -4 -2 0 2 4 6 8 10 20 4.8 12 5 INPUT POWER (dBm) Noise Figure vs. Temperature 5.6 5.8 6 Gain (dB), P1dB (dBm), Psat (dBm) 28 9 8 NOISE FIGURE (dB) 5.4 Gain & Power vs. Supply Voltage 10 7 6 5 4 3 +25 C +85 C -40 C 2 1 0 4.8 5.2 FREQUENCY (GHz) 5 5.2 5.4 5.6 5.8 27 26 25 24 23 22 21 20 Gain P1dB Psat 19 18 2.7 6 3 FREQUENCY (GHz) 3.3 Vcc Supply Voltage (Vdc) Reverse Isolation vs. Temperature Power Down Isolation vs. Temperature 0 0 -10 -10 ISOLATION (dB) +25 C +25 C +85 C -40 C -20 -30 -40 -50 4.8 +85 C -40 C -20 -30 -40 5 5.2 5.4 5.6 FREQUENCY (GHz) 11 - 68 32 26 12 0 -12 -10 ISOLATION (dB) LINEAR & POWER AMPLIFIERS - SMT 11 Pout (dBm), GAIN (dB), PAE (%) 36 5.8 6 -50 4.8 5 5.2 5.4 5.6 5.8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz EVM vs. Supply Current, F = 5.2 GHz EVM vs. Temperature, Icc = 240 mA, F = 5.2 GHz Icc=160mA Icc=200mA Icc=240mA Icc=280mA 6 5 4 3 2 1 0 7 6 +25 C +85 C 5 -40 C 4 11 3 2 1 0 10 11 12 13 14 15 16 17 18 10 11 12 OUTPUT POWER (dBm) 13 14 15 16 OUTPUT POWER (dBm) Gain, Power & Quiescent Supply Current vs. Vpd @ 5.2 GHz 1.5 330 310 290 270 250 230 210 190 170 150 130 110 90 70 50 30 Gain P1dB Psat Icc 1.75 2 2.25 2.5 2.75 Icc (mA) 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 3 Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 17 18 LINEAR & POWER AMPLIFIERS - SMT ERROR VECTOR MAGNITUDE (%) 8 7 GAIN (dB), P1dB (dBm), Psat (dBm) ERROR VECTOR MAGNITUDE (%) 8 11 - 69 HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Absolute Maximum Ratings LINEAR & POWER AMPLIFIERS - SMT 11 Collector Bias Voltage (Vcc) +5Vdc Control Voltage (Vpd) +3.5 Vdc RF Input Power (RFIN)(Vs = Vpd = +3.0 Vdc) +13 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 17 mW/°C above 85 °C) 1.105 W Thermal Resistance (junction to ground paddle) 59 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC415LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC415LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 415 XXXX [2] 415 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 70 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Pin Descriptions Function Description 1 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. 2, 3, 5, 6, 7, 8, 9, 12, 13, 15, 16 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 4 RFIN This pin is AC coupled and matched to 50 Ohms from 5.0 to 6.0 GHz. 10, 11 RFOUT RF output and DC bias for the output stage. 14 Vpd Power control pin. For maximum power, this pin should be connected to 3.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 LINEAR & POWER AMPLIFIERS - SMT Pin Number 11 - 71 HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Evaluation PCB LINEAR & POWER AMPLIFIERS - SMT 11 List of Materials for Evaluation PCB 105173 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 2 mm DC Header C1 - C3 330 pF Capacitor, 0603 Pkg. C4 2.2 μF Capacitor, Tantalum C5 0.5 pF Capacitor, 0603 Pkg. C6 7.0 pF Capacitor, 0402 Pkg. L1 3.0 nH Inductor, 0805 Pkg. U1 HMC415LP3 / HMC415LP3E Amplifier PCB [2] 104723 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 11 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Application Circuit Recommended Component Values L1 3.0 nH C1, C2, C3 330 pF C4 2.2 μF C5 0.5 pF C6 7.0 pF Note 1: C1 should be located < 0.1” (2.54mm) from Pin 1 (Vcc) Note 2: C3 should be located < 0.1” (2.54mm) from L1. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 73