E12511

PDIC for Blu-ray Disc Player
CXA2958EN
Description
The CXA2958EN is a PDIC (photodetector IC) developed as a photodetector for optical pickups of Blu-ray disc players.
This IC has the photodetector area separately for BD/DVD and CD. Therefore, the optical pickup can be configured with the
minimum number of parts using the two-wavelength one package laser diode.
(Applications: Optical pickups for Blu-ray disc players)
Features
◆ CD/DVD/BD three wavelengths supported (Blue laser + CD/DVD two-wavelength laser configuration)
◆ Gain switching function (0 dB, 9 dB and 15 dB)
◆ High sensitivity photodiode (0.285 A/W @ 405 nm)
◆ Low noise amplifier
◆ Reflow mounting possible
Package
Open photodetector type resin molded ultra-small package (18 pin)
Structure
CMOS silicon monolithic IC
1
CXA2958EN
Absolute Maximum Ratings
(Ta = 25 °C)
・ Supply voltage
VCC
5.7
V
・ Operating temperature
Topr
-10 to +80
°C
・ Storage temperature
Tstg
-40 to +125
°C
・ Allowable power dissipation
PD
400
・ Supply voltage 1
VCC
4.5 to 5.5
V
・ Supply voltage 2
Vc
1.65 to 2.5
V
・ SW select voltage range (Low)
Vsw
0 to 0.4
V
・ SW select voltage range (Middle)
Vsw
1.3 to 2.0
V
・ SW select voltage range (High)
Vsw
2.5 to VCC
V
mW
Operating Conditions
Output Sensitivity Table
Gain
Gain ratio
[dB]
Output sensitivity [mV/µW]
Sub
Main
RF±
Blue
DVD
CD
Blue
DVD
CD
Blue
DVD
CD
High gain
15
69.9
91.7
129.9
394.8
518.3
733.9
35.0
45.9
65.0
Middle gain
9
35.0
45.9
45.6
197.9
259.5
257.6
17.5
23.0
22.8
Low gain
0
12.3
16.1
―
69.4
91.2
―
6.15
8.07
―
Sleep
―
Hi-Z
Hi-Z
Hi-Z
The sensitivity table is specified according to the measurement conditions of electrical and optical characteristics.
Note) The output sensitivity ratio is as shown right. 405 nm : 650 nm : 780 nm = 1 : 1.312 : 1.302
2
CXA2958EN
Mode Setting
SW1
SW2
Mode
Gain
H
High gain
M
H
Blue mode
L
Low gain
H
High gain
M
M
Middle gain
DVD mode
Middle gain
L
Low gain
H
High gain
CD mode
M
L
Middle gain
L
Sleep
Hi-Z
SW3
Sub PD mode
H
Blue/DVD-differential astigmatism
L
Blue/DVD-DPP
Note) SW1 to SW3 internal pull-down resistor: 50 kΩ
SW1: Mode switching
SW2: Gain switching
SW3: Sub PD switching
Photodetector Switching
Connected PD
Pin name
Blue/DVD-differential
CD mode
Blue/DVD-DPP mode
astigmatism mode
A
a
A
B
b
B
C
c
C
D
d
D
E
e+h
e+i
E
F
f+g
g+k
F
G
i +l
h+l
G
H
j+k
f+j
H
RF+
+ 0.5 × (a + b + c + d)
+ 0.5 × (A + B + C + D)
RF-
- 0.5 × (a + b + c + d)
- 0.5 × (A + B + C + D)
3
CXA2958EN
Block Diagram
Vcc 10
8
GND1
2
9
GND2
+
-
5
E
+
-
4
F
+
-
16 G
+
-
15 H
Vc
Ao
A
+
-
+
-
6
a
A
Bo
+
-
+
-
B 12
b
B
Co
+
-
+
-
C 11
c
e
h
i
E
+
-
f
g
k
F
+
-
l
+
-
C
G
Do
D
7
+
-
+
-
d
+
-
j
D
H
RF+ 13
+
-
Ao
Bo
Co
Do
3
SW1
50 kΩ
Reference voltage
1.6 V
17 SW2
50 kΩ
RF- 14
+
-
18 SW3
Reference voltage
2.9 V
50 kΩ
Ao
Bo
Co
Do
1
Each output pin is Hi-Z in sleep mode.
TEST (Pin 1): Sony test pin (Use it with left open or grounded.)
Note) Short-circuit GND1 and GND2 on the flexible printed circuit board.
Arithmetic formulas
RF+ = (A + B + C + D)/2
RF- = -(A + B + C + D)/2
4
TEST
CXA2958EN
Pin Description
Pin
Symbol
I/O
Equivalent circuit
Description
No.
VCC
1
TEST
Sony test pin.
1
I
(Leave open or connect to GND.)
GND
VCC
2
VC
2
I
Reference voltage input.
GND
VCC
300 kΩ
3
SW1
17
SW2
18
SW3
I
3
17
18
Mode switching input.
0 V to 0.4 V : Low
1 kΩ
1.3 V to 2.0 V : Middle
50 kΩ
2.5 V to VCC : High
GND
VCC
5
E
4
F
O
16
G
15
H
5
4
16
15
Output of voltage signals
converted from optical signals.
GND
5
CXA2958EN
Pin
Symbol
I/O
Equivalent circuit
Description
No.
VCC
6
A
12
B
O
11
C
7
D
6
12
11
7
Output of voltage signals converted from
optical signals.
GND
VCC
8
GND1
9
GND2
10
VCC
I
Ground.
8
9
—
I
Positive power supply.
VCC
13
RF+
O
Non-inverted output of added A to D
signals.
13
GND
VCC
14
RF–
O
14
Inverted output of added A to D signals.
GND
6
CXA2958EN
Electrical and Optical Characteristics
(Vcc = 5.0 V, Vc = 2.2 V, Ta = 25 ˚C)
1. Current Consumption
Item
Symbol
Current consumption
Icc
Current consumption Sleep
Iccs
Current consumption Vc
Ivc1
Current consumption Vc
Ivc2
Conditions
Output
Gain
In the dark
―
―
For output
Min.
Typ.
Max.
―
28
35
―
0.32
0.56
―
0.1
―
―
-1.4
―
Unit
mA
voltage of 1 V
2. Output Offset Voltage
Item
Output offset voltage
Symbol
Voff
Conditions
Output
Gain
Min.
Typ.
Max.
High
- 35
―
35
A to D
Middle
- 35
―
35
In the dark,
Low
- 35
―
35
Vc reference
High
- 45
―
45
Middle
- 40
―
40
Low
- 40
―
40
1.45
1.6
1.75
V
2.65
2.9
3.15
V
High
- 70
―
70
Middle
- 70
―
70
Low
- 70
―
70
High
-70
―
70
Middle
- 70
―
70
Low
- 70
―
70
High
- 100
―
100
E to H
RFP reference
voltage
RFN reference
voltage
VRFP
VRFN
In the dark,
RF+
GND reference
Low
In the dark,
RF-
GND reference
Middle
Low
A+B
+C + D
voltage difference
Middle
High
(A + C)
- (B + D)
ΔVoff
mV
High
(A + D)
- (B + C)
Output offset
Unit
Middle
- 100
―
100
In the dark,
Low
- 100
―
100
Vc reference
High
- 90
―
90
Middle
- 80
―
80
Low
- 80
―
80
(E + H)
- (F + G)
(E + G)
- (F + H)
E+F
+G + H
7
High
- 90
―
90
Middle
- 80
―
80
Low
- 80
―
80
High
- 90
―
90
Middle
- 80
―
80
Low
- 80
―
80
mV
CXA2958EN
3. Output Offset Temperature Drift
Item
Symbol
Conditions
Output
A to D
Output offset
temperature drift*
ΔVoff/T
In the dark
Vc reference
0 °C to 80 °C
E to H
RF+
RF-
Gain
High
Middle
Low
High
Middle
Low
High
Middle
Low
Min.
Typ.
Max.
-100
―
100
Unit
µV/°C
-200
―
200
-1.5
―
1.5
mV/°C
Gain
Min.
Typ.
Max.
Unit
High
52.4
69.9
87.4
Middle
26.3
35.0
43.8
4. Output Sensitivity
Item
Symbol
Conditions
Po
Output
5 μW
5 μW
λ = 405 nm
A to D
15 μW
Low
9.2
12.3
15.4
2 μW
High
296.1
394.8
493.5
Middle
148.4
197.9
247.4
15 μW
Low
52.1
69.4
86.8
5 μW
High
26.3
35.0
43.8
Middle
13.1
17.5
21.9
Low
4.61
6.15
7.69
High
68.8
91.7
114.6
5 μW
5 μW
15 μW
E to H
RF+
RF-
5 μW
5 μW
Output sensitivity*
DCS
λ = 650 nm
Middle
34.4
45.9
57.4
15 μW
Low
12.1
16.1
20.1
mV
2 μW
High
388.7
518.3
647.9
/µW
Middle
194.6
259.5
324.4
Low
68.4
91.2
114.0
5 μW
A to D
E to H
15 μW
5 μW
5 μW
15 μW
3 μW
5 μW
λ = 780 nm
2 μW
5 μW
3 μW
5 μW
Vomax
DC
Output saturation
RF+
RFA to D
E to H
High
34.4
45.9
57.4
Middle
17.3
23.0
28.8
Low
6.08
8.10
10.13
High
97.4
129.9
162.4
Middle
34.2
45.6
57.0
High
550.4
733.9
917.4
Middle
193.2
257.6
322.0
RF+
High
48.8
65.0
81.3
17.1
22.8
28.5
3.6
3.8
―
RF-
Middle
A to D
High
E to H
Middle
RF+
Low
voltage
V
High
Vomin
DC
RF-
Middle
Low
8
―
1.2
1.4
CXA2958EN
5. AC Characteristics
Item
Symbol
Conditions
Output
Gain
Min.
Typ.
Max.
High
90
120
―
Middle
132
160
―
Low
132
160
―
High
1
4
―
Middle
1
4
―
Low
1
4
―
High
90
120
―
Middle
132
160
―
Low
132
160
―
High
40
70
―
Middle
40
70
―
High
1
4
―
Middle
1
4
―
RF+
High
40
70
―
RF-
Middle
40
70
―
―
0.5
1.5
―
0.5
1.5
―
0.5
1.5
―
0.5
1.5
―
0.5
1.5
―
0.5
1.5
―
0.5
1.5
―
0.5
1.5
―
0.5
1.5
―
0.5
1.5
A to D
λ = 405 nm, 650 nm
100 kHz ref. -3 dB
E to H
BD/DVD mode
Frequency
RF+
fc
response*
RF-
A to D
λ = 780 nm
100 kHz ref. -3 dB
E to H
CD mode
λ = 405 nm, 650 nm
A to D
1 MHz to 66 MHz
(RF+)
BD/DVD mode
- (RF-)
(RF+)
MHz
High
A to D
λ = 405 nm, 650 nm
Unit
Middle
- (RF-)
1 MHz to 99 MHz
Group delay
A to D
BD/DVD mode
ΔGd
(RF+)
difference*
Low
ns
- (RF-)
A to D
(RF+)
λ = 780 nm
High
- (RF-)
1 MHz to 30 MHz
A to D
CD mode
(RF+)
- (RF-)
9
Middle
CXA2958EN
6. Output Noise Level
Item
Symbol
Conditions
Output
1 MHz to 66 MHz,
RBW = 30 kHz,
in the dark
BD/DVD mode
A to D
RF+,
RF-
Gain
RF+,
RF-
Output noise level*
RF+,
RF-
RF+,
RF-
-74
-69
―
-73
-68
―
-76.5
-73
―
-75.5
-72
―
-85.5
-82
―
-84
-81
―
-73
-68
―
-72
-67
―
-80
-75
―
-79
-74
Unit
dBm
High
A to D
RF+,
RF-
―
Low
A to D
1 MHz to 30 MHz,
RBW = 30 kHz,
in the dark
CD mode
Max.
Middle
A to D
Vn
Typ.
High
A to D
1 MHz to 99 MHz,
RBW = 30 kHz,
in the dark
BD/DVD mode
Min.
Middle
7. Supply Voltage Rejection Ratio
Item
Supply voltage
rejection ratio*
Symbol
PSRR
Conditions
In the dark,
Ripple voltage 100 mV
10 kHz to 200 kHz
Output
Gain
Min.
Typ.
Max.
Unit
(RF+)
- (RF-)
High
―
30
―
dB
Conditions
Output
Gain
Min.
Typ.
Max.
Unit
―
55
―
―
200
―
―
55
―
8. Output Impedance
Item
Symbol
A to D
Output impedance*
Zo
In the dark
E to H
RF+
RF-
High
Middle
Low
Ω
Notes on Measurement (for all modes)
1. Vc is the reference for output offset voltage of A to D and E to H.
2. Output voltage: Vc is the reference for A to D and E to H. 1.6 V is the reference for RF+. 2.9 V is the reference for RF–.
Then, the offset voltage is excluded.
3. GND is the reference for the maximum output potential and minimum output potential.
4. Items with an asterisk (*) are design guaranteed items.
5. Measurement by optical input: Measurement is made by emitting light to the center of each photodiode.
6. Load conditions (for Vc) are as follows.): A to D: 2.5 kΩ//5 pF,
E to H: 10 kΩ//5 pF,
RF±: 0.1 μF + (2.5 kΩ//5 pF)
10
CXA2958EN
Measurement Circuit
2.2 V
1
TEST
SW3
18
2
Vc
SW2
17
3
SW1
G
16
4
F
H
15
5
E
RF-
14
6
A
RF+
13
7
D
B
12
8
GND1
C
11
9
GND2
VCC
10
0.1 µF
5.0 V
0.1 µF
The load conditions (for Vc)
: A to D:2.5 kΩ//5 pF, E to H:10 kΩ//5 pF
RF±:0.1 μF + (2.5 kΩ//5 pF)
11
CXA2958EN
Photodetector Dimensions
Unit (μm)
Top View
CD
BD / DVD
10
10
90
105
147.2
27
105
f
b
l
i
90
k
j
147.2
c
D A
C B
G
H
105
10
13.6
a
90
d
90
27
105
15.2 15.2
90
□110
122.7
122.7
g
90
E
F
h e
10
Photodetector center
162.6
AL shaded area
Pin Configuration
Top View (Viewed from the photodetector side)
TEST
1
18
SW3
Vc
2
17
SW2
SW1
3
16
G
15
H
14
RF-
AB
DC
GH
4
EF
E
5
e f a b i j
h g dc l k
A
6
13
RF+
D
7
12
B
GND1
8
11
C
GND2
9
10
Vcc
F
TEST: Sony test pin (Leave open or connect to GND.)
12
CXA2958EN
Photodetector Position
Y
±0.15 mm
Height of receiving surface
Receiving
surface
±0.15 mm
1.2±0.15
X
Organic
substrate
Bottom of
the package
±0.2mm
Resin
Chip
Side View
Top View
Position accuracy: X,Y ±0.15 mm
θ ±2°
PKG Top View
Product mark
±0.2mm
1pin INDEX
13
Concavities for removing
the protective tape×4
CXA2958EN
Example of Representative Characteristics
Frequency response
(X: 1 MHz to 1 GHz log, Y: 3 dB/div)
・BD High Gain Mode
・BD Middle Gain Mode
A to D
3.0
0.0
0.0
-3.0
-3.0
-6.0
-6.0
Gain[dB]
Gain[dB]
A to D
3.0
-9.0
-9.0
-12.0
-12.0
-15.0
-15.0
-18.0
-18.0
1M
10 M
100 M
1M
1G
10 M
3.0
3.0
0.0
0.0
-3.0
-3.0
-6.0
-6.0
Gain[dB]
Gain[dB]
1G
100 M
1G
100 M
1G
E to H
E to H
-9.0
-9.0
-12.0
-12.0
-15.0
-15.0
-18.0
-18.0
1M
10 M
100 M
1M
1G
10 M
Frequency[Hz]
Frequency[Hz]
(RF+) - (RF-)
3.0
3.0
0.0
0.0
-3.0
-3.0
-6.0
-6.0
Gain[dB]
Gain[dB]
100 M
Frequency[Hz]
Frequency[Hz]
-9.0
-9.0
-12.0
-12.0
-15.0
-15.0
-18.0
1M
10 M
100 M
(RF+) - (RF-)
-18.0
1G
1M
Frequency[Hz]
10 M
Frequency[Hz]
14
CXA2958EN
Frequency response
(X: 1 MHz to 1 GHz log, Y: 3 dB/div)
・BD Low Gain Mode
A to D
3.0
0.0
-3.0
Gain[dB]
-6.0
-9.0
-12.0
-15.0
-18.0
1M
10 M
100 M
1G
100 M
1G
100 M
1G
Frequency[Hz]
E to H
3.0
0.0
-3.0
Gain[dB]
-6.0
-9.0
-12.0
-15.0
-18.0
1M
10 M
Frequency[Hz]
(RF+) - (RF-)
3.0
0.0
Gain[dB]
-3.0
-6.0
-9.0
-12.0
-15.0
-18.0
1M
10 M
Frequency[Hz]
15
CXA2958EN
Frequency response
(X: 1 MHz to 1 GHz log, Y: 3 dB/div)
・DVD High Gain Mode
・DVD Middle Gain Mode
A to D
3.0
0.0
0.0
-3.0
-3.0
-6.0
-6.0
Gain[dB]
Gain[dB]
A to D
3.0
-9.0
-9.0
-12.0
-12.0
-15.0
-15.0
-18.0
-18.0
1M
10 M
100 M
1M
1G
10 M
100 M
1G
100 M
1G
E to H
E to H
3.0
3.0
0.0
0.0
-3.0
-3.0
-6.0
-6.0
Gain[dB]
Gain[dB]
1G
Frequency[Hz]
Frequency[Hz]
-9.0
-9.0
-12.0
-12.0
-15.0
-15.0
-18.0
-18.0
1M
10 M
100 M
1M
1G
10 M
Frequency[Hz]
Frequency[Hz]
(RF+) - (RF-)
3.0
3.0
0.0
0.0
-3.0
-3.0
-6.0
-6.0
Gain[dB]
Gain[dB]
100 M
-9.0
-9.0
-12.0
-12.0
-15.0
-15.0
-18.0
1M
10 M
100 M
(RF+) - (RF-)
-18.0
1G
1M
Frequency[Hz]
10 M
Frequency[Hz]
16
CXA2958EN
Frequency response
(X: 1 MHz to 1 GHz log, Y: 3 dB/div)
・DVD Low Gain Mode
A to D
3.0
0.0
-3.0
Gain[dB]
-6.0
-9.0
-12.0
-15.0
-18.0
1M
10 M
100 M
1G
100 M
1G
100 M
1G
Frequency[Hz]
E to H
3.0
0.0
-3.0
Gain[dB]
-6.0
-9.0
-12.0
-15.0
-18.0
1M
10 M
Frequency[Hz]
(RF+) - (RF-)
3.0
0.0
Gain[dB]
-3.0
-6.0
-9.0
-12.0
-15.0
-18.0
1M
10 M
Frequency[Hz]
17
CXA2958EN
Frequency response
(X: 1 MHz to 1 GHz log, Y: 3 dB/div)
・CD High Gain Mode
・CD Middle Gain Mode
A to D
3.0
0.0
0.0
-3.0
-3.0
-6.0
-6.0
Gain[dB]
Gain[dB]
A to D
3.0
-9.0
-9.0
-12.0
-12.0
-15.0
-15.0
-18.0
-18.0
1M
10 M
100 M
1M
1G
10 M
Frequency[Hz]
E to H
0.0
0.0
-3.0
-3.0
-6.0
-6.0
-9.0
100 M
1G
-9.0
-12.0
-12.0
-15.0
-15.0
-18.0
-18.0
1M
10 M
100 M
1M
1G
10 M
Frequency[Hz]
Frequency[Hz]
(RF+) - (RF-)
3.0
(RF+) - (RF-)
3.0
0.0
0.0
-3.0
-3.0
-6.0
-6.0
Gain[dB]
Gain[dB]
1G
E to H
3.0
Gain[dB]
Gain[dB]
3.0
100 M
Frequency[Hz]
-9.0
-9.0
-12.0
-12.0
-15.0
-15.0
-18.0
-18.0
1M
10 M
100 M
1M
1G
10 M
100 M
Frequency[Hz]
Frequency[Hz]
18
1G
CXA2958EN
Notes on Handling
1. Mechanical strength of package
The mechanical strength of the package is not guaranteed for the CXA2958EN.
Do not employ a mounting method which applies a heavy load to the package such as supporting a board with the
package.
2. Visual inspection standards
The visual inspection standards over the photodetector are as follows.
(1) Foreign object limit
: Equivalent area 10 μmϕ or less
(2) Inspection method
: Focus on the photodetector and measure the size of the foreign object.
(3) Inspection range
: Entire photodetector area (on page 12)
3. Bypass capacitors
Connect 0.1 μF capacitors between the Vcc and GND pins and between the Vc and GND pins to lower the power supply
line impedance. Use a flexible printed circuit (FPC) pattern or take other measures so that the bypass capacitors can be
located near (3 mm or less) the PDIC.
4. Soldering
It has been confirmed that the following conditions are satisfied for the reflow soldering.
R390 and IPC/JEDEC J-STD-020D MSL 3
Floor Life 30 ˚C 60 % RH 168 hours
<Reflow soldering recommended conditions in actual use>
(1) Perform infrared or hot air reflow, or use an oven that combines these methods.
(2) Perform reflow soldering a maximum of three times.
(3) Finish reflow soldering within the conditions of 30 ˚C and 60 % RH in 168 hours after unsealing the
moisture-proof packing.
(4) Mount this IC at the reflow peak temperature of 255 ˚C or less according to the reflow profile of
IPC/JEDEC J-STD-020D.
(5) Unless reflow soldering can be performed within the specifications above, bake the IC before reflow soldering.
[Baking conditions]
・125 ˚C, 10 to 48 h
・Transfer to a heat proof tray or a heat proof vessel for baking.
・Perform baking only one time.
(6) Finish reflow soldering within the specifications above after baking.
5. Others
(1) If outgas is emitted from the materials used such as an uncured portion of the adhesive, foreign objects may deposit
on the photodetector by laser irradiation. Cure the adhesive thoroughly and check it thoroughly by laser aging, etc.
(2) This package has a bare-chip structure. Avoid using materials that emit strong corrosive outgas.
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CXA2958EN
Package Outline
(Unit: mm)
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CXA2958EN
Marking
2958
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CXA2958EN
Note
Sony reserves the right to change products and specifications noted in this data sheet without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume
responsibility for any problems arising out of the use of these circuits.
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