Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013-00285 Wafer Process: PHEMT-J HMC190B HMC194A HMC197B HMC199A HMC221B HMC231A HMC232A HMC233A HMC234A HMC240B HMC241A HMC244A HMC245A HMC252A HMC253A HMC270A HMC271B HMC273A HMC274A HMC284A HMC305B HMC306A HMC321A HMC322A HMC344A HMC345A HMC347A HMC348A HMC349A HMC424A HMC425A HMC427A HMC435A HMC468A HMC470A HMC472A HMC539A HMC540A HMC542B HMC544A HMC545A HMC547A HMC550A HMC574A HMC595A HMC603A HMC624A HMC625A HMC626A HMC627A HMC641A HMC681A HMC742A HMC743A Rev: 06 HMC784A HMC792A HMC849A HMC939A HMC941A HMC1018A HMC1019A HMC1084 HMC-C011A HMC-C018A HMC-C019A HMC-C025A QTR: 2013-00285 Wafer Process: PHEMT-J Rev: 06 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the PHEMT-J process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 2. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103. 3. MSL: Moisture sensitivity level pre-conditioning is performed per JESD22-A113. 4. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation. 5. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing. 6. UHAST: Unbiased Highly Accelerated Stress Test. Devices are subjected to 96 hours of 85% relative humidity at a temperature of 130°C and pressure (18.6 PSIG). This test is performed in accordance with JESD22-A118. 7. Temperature Cycle: Devices are subjected to 500 cycles of -65°C to 150°C. This test is performed in accordance with JESD22-A104. 8. THB: Temperature Humidity Bias. Devices are subjected to 1000 hours of 85% relative humidity at a temperature of 85°C and electrical bias. This test is performed in accordance with JESD22-A101. QTR: 2013-00285 Wafer Process: PHEMT-J Rev: 06 Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC6488A / HMC349A (QTR2012-00017) QTY IN 80 QTY OUT 80 Complete HTOL, 1000 hours 80 80 Complete Post HTOL Electrical Test 80 80 Pass HTSL, 1000 hours 46 46 Complete Post HTSL Electrical Test 46 46 Pass TEST Initial Electrical PASS/FAIL NOTES HMC6484 / HMC273A (QTR2012-00042) QTY IN 80 QTY OUT 80 Complete HTOL, 1000 hours 80 80 Complete Post HTOL Electrical Test 80 80 Pass HTSL, 1000 hours 80 80 Complete Post HTSL Electrical Test 80 80 Pass TEST Initial Electrical PASS/FAIL NOTES QTR: 2013-00285 Wafer Process: PHEMT-J Rev: 06 HMC284A (QTR2012-00461) QTY IN 478 QTY OUT 478 Complete HTOL, 1000 hours 160 160 Complete Post HTOL Electrical Test 160 160 Pass HTSL, 1000 hours 80 80 Complete Post HTSL Electrical Test 80 80 Pass MSL1 Preconditioning 238 238 Complete MSL1 Preconditioning Final Test 238 238 Pass UHAST (Preconditioned) 80 80 Complete UHAST Final Test 80 80 Pass Temperature Cycle (Preconditioned) 80 80 Complete Temperature Cycle Final Test 80 80 Pass THB (Preconditioned) 78 78 Complete THB Final Test 78 78 Pass TEST Initial Electrical PASS/FAIL NOTES QTR: 2013-00285 Wafer Process: PHEMT-J Rev: 06 HMC472A (QTR2013-00524) Initial Electrical QTY IN 1134 QTY OUT 1134 Complete HTOL, 168 hours 1134 1134 Complete Post HTOL Electrical Test 1134 1134 Pass QTY IN 200 QTY OUT 200 Complete HTOL, 1000 hours, Tj=150°C 80 80 Complete Post HTOL Electrical Test 80 80 Pass HTSL, 1000 hours 30 30 Complete Post HTSL Electrical Test 30 30 Pass MSL1 Preconditioning 90 90 Complete MSL1 Preconditioning Final Test 90 90 Pass UHAST (Preconditioned) 30 30 Complete UHAST Final Test 30 30 Pass Temperature Cycle (Preconditioned) 30 30 Complete Temperature Cycle Final Test 30 30 Pass THB (Preconditioned) 30 30 Complete THB Final Test 30 30 Pass TEST PASS/FAIL NOTES HMC349A (QTR2014-00445) TEST Initial Electrical PASS/FAIL NOTES QTR: 2013-00285 Wafer Process: PHEMT-J Rev: 06 HMC1190A (Q11869) TEST QTY IN QTY OUT Initial Electrical PASS/FAIL NOTES Complete HTOL, 1000 hours, Tj=125°C 49 49 Complete Post HTOL Electrical Test 49 49 Pass HTSL, 1000 hours 135 135 Complete Post HTSL Electrical Test 135 135 Pass MSL1 Preconditioning 135 135 Complete MSL1 Preconditioning Final Test 135 135 Pass Temperature Cycle (Preconditioned) 90 90 Complete Temperature Cycle Final Test 90 90 Pass THB (Preconditioned) 45 45 Complete THB Final Test 45 45 Pass ESD Results 42 42 Pass 3 lots of 45 units each. 2 lots of 45 units each. HBM pass 500V CDM pass 1000V QTR: 2013-00285 Wafer Process: PHEMT-J Rev: 06 PHEMT-J Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With Device Die Junction Temp, Tj = 85°C HMC6488A / HMC349A (QTR2012-00017) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC6484 / 273A (QTR2012-00042) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC284A (QTR2012-00461) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC472A (QTR2013-00524) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC349A (QTR2014-00445) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC1190A (Q11869) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 125°C(398°K) QTR: 2013-00285 Wafer Process: PHEMT-J Rev: 06 Device hours: HMC6488A / HMC349A (QTR2012-00017) = (80 X 1000hrs) = 80,000 hours HMC6484 / HMC273A (QTR2012-00042) = (80 X 1000hrs) = 80,000 hours HMC284A (QTR2012-00461) = (160 X 1000hrs) = 160,000 hours HMC472A (QTR2013-00524) = (1134 X 168hrs) = 190,512 hours HMC349A (QTR2014-00445) = (80 X 1000hrs) = 80,000 hours HMC1190A (Q11869) = (49 X 1000hrs) = 49,000 hours For PHEMT-J MMIC, Activation Energy = 1.46 eV Acceleration Factor (AF): HMC6488A / HMC349A (QTR2012-00017) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/398)] = 117.4 HMC6484 / 273A (QTR2012-00042) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/398)] = 117.4 HMC284A (QTR2012-00461) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/423)] = 1461.1 HMC472A (QTR2013-00524) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/423)] = 1461.1 HMC349A (QTR2014-00445) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/423)] = 1461.1 HMC1190A (Q11869) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/398)] = 117.4 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (80,000x117.4)+(80,000x117.4)+(160,000x1461.1)+(190,512x1461.1)+(80,000x1461.1) +(49,000x117.4) = 6.54x108 hours QTR: 2013-00285 Wafer Process: PHEMT-J Rev: 06 Since there was no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 85°C device junction temp; Failure Rate 60 = [(2)60,2]/(2X 6.54x108 )] = 1.8/ 1.39x109 = 1.40x10-9 failures/hour or 1.4 FIT or MTTF = 7.1x108 Hours 90 = [(2)90,2]/(2X 6.54x108 )] = 4.6/ 1.39x109 = 3.53x10-9 failures/hour or 3.5 FIT or MTTF = 2.8x108 Hours