Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013- 00245 Wafer Process: MESFET-B HMC128 HMC129 HMC130 HMC135 HMC136 HMC137 HMC141 HMC142 HMC143 HMC144 HMC158 HMC170 HMC171 HMC175 HMC187 HMC188 HMC199 HMC203 HMC204 HMC205 HMC226 HMC256 HMC258 HMC259 HMC260 HMC266 HMC292 HMC294 HMC329 HMC330 HMC331 HMC446 HMC473 HMC520 HMC521 HMC522 HMC523 HMC524 HMC525 HMC526 HMC526 HMC527 HMC528 HMC553 HMC554 HMC555 HMC556 HMC557 HMC558 HMC560 Rev: 04 HMC567 HMC568 HMC569 HMC619 HMC620 HMC637 HMC663 HMC710 HMC773 HMC774 HMC775 HMC787 HMC798 HMC1042 HMC1048 HMC7641 QTR: 2013- 00245 Wafer Process: MESFET-B Rev: 04 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the MESFET-B process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. ESD: Electro-Static Discharge. A sudden transfer of electrostatic charge between bodies or surfaces at different electrostatic potentials. 2. HBM: Human Body Model. A specified ESD testing circuit characterizing an event that occurs when a device is subjected to an electro-static charge stored in the human body and discharged through handling of the electronic device. This test was performed in accordance with JEDEC 22-A114. 3. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 4. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103. 5. MSL: Moisture sensitivity level pre-conditioning is performed per JESD22-A113. 6. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation. 7. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing. 8. UHAST: Unbiased Highly Accelerated Stress Test. Devices are subjected to 96 hours of 85% relative humidity at a temperature of 130°C and pressure (18.6 PSIG). This test is performed in accordance with JESD22-A118. QTR: 2013- 00245 Wafer Process: MESFET-B Rev: 04 Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC260, HMC292 (QTR2002-00001) TEST Initial Electrical HTOL, 1000 hours Post HTOL Electrical Test Bond Pull Die Shear SEM Inspection Metal and Dielectric Thickness QTY IN 23 20 23 20 23 20 10 10 10 10 10 10 10 10 QTY OUT 23 20 23 20 23 20 10 10 10 10 10 10 10 10 PASS/FAIL Complete Complete Pass Pass Pass Pass Pass NOTES HMC260 HMC293 QTR: 2013- 00245 Wafer Process: MESFET-B Rev: 04 HMC128, HMC129 (QTR2002-00003) TEST Initial Electrical HTOL, 1000 hours Post HTOL Electrical Test Bond Pull Die Shear SEM Inspection Metal and Dielectric Thickness QTY IN 33 12 33 12 33 12 5 5 4 4 5 5 5 5 QTY OUT 33 12 33 12 33 12 5 5 4 4 5 5 5 5 PASS/FAIL Complete Complete Pass Pass Pass Pass Pass NOTES HMC128 HMC129 QTR: 2013- 00245 Wafer Process: MESFET-B Rev: 04 HMC6505 (QTR2012-00267) TEST QTY IN QTY OUT PASS/FAIL Initial electrical Test 350 350 Pass MSL-3 160 160 Complete Final Electrical Test Post MSL-3 160 160 Pass UHAST – Post PC Final electrical Test – Post UHAST Temp. Cycle – Post PC 80 80 Complete 80 80 Pass 80 80 Complete Final electrical Test – Post T/C 80 80 Pass HTSL 80 80 Complete Final Electrical Test – Post HTSL 80 80 Pass HTOL 80 80 Complete Final Electrical test – Post HTOL 80 80 Pass Physical Dimensions 15 15 Pass Solderability 6 6 Pass ESD Exposure - HBM 9 9 Complete Electrical Test – Post ESD 9 9 Pass – 250V NOTES HBM Class 1A QTR: 2013- 00245 Wafer Process: MESFET-B Rev: 04 HMC7641 (QTR2014-00349) TEST QTY IN QTY OUT PASS/FAIL Initial electrical Test 164 164 Pass MSL-3 Preconditioning 30 30 Complete Final Electrical Test Post MSL-3 30 30 Pass UHAST (Preconditioned) 30 30 Complete UHAST Final electrical Test 30 30 Pass HTSL 30 30 Complete HTSL Final Electrical Test 30 30 Pass HTOL 80 80 Complete HTOL Final Electrical Test 80 80 Pass ESD Exposure 24 24 Complete Electrical Test – Post ESD 24 24 Pass NOTES HBM pass 250V (Class 1A) CDM Pass 2kV (Class C3) QTR: 2013- 00245 Wafer Process: MESFET-B Rev: 04 MESFET-B Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With device backside case temp, TC = 85°C HMC260, HMC292 (QTR2002-00001) Operating Junction Temp (Toj) =85°C(358°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC128, HMC129 (QTR2002-00003) Operating Junction Temp (Toj) =85°C(358°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC6505 (QTR2012-00267) Operating Junction Temp (Toj) =135°C(408°K) Stress Junction Temp (Tsj) = 175°C(448°K) HMC7641 (QTR2014-00349) Operating Junction Temp (Toj) =145°C(418°K) Stress Junction Temp (Tsj) = 175°C(448°K) Device hours: HMC260, HMC292 (QTR2002-00001) = (43 X 1000hrs) = 43,000 hours HMC128, HMC129 (QTR2002-00003) = (45 X 1000hrs) = 45,000 hours HMC6505 (QTR2012-00267) = (80 X 1000hrs) = 80,000 hours HMC7641 (QTR2014-00349) = (80 X 1000hrs) = 80,000 hours For MESFET-B MMIC, Activation Energy = 1.6 eV QTR: 2013- 00245 Wafer Process: MESFET-B Rev: 04 Acceleration Factor (AF): HMC260, HMC292 (QTR2002-00001) Acceleration Factor = exp[1.6/8.6 e-5(1/358-1/423)] = 2938.6 HMC128, HMC129 (QTR2002-00003) Acceleration Factor = exp[1.6/8.6 e-5(1/358-1/423)] = 2938.6 HMC6505 (QTR2012-00267) Acceleration Factor = exp[1.6/8.6 e-5(1/408-1/448)] = 58.6 HMC7641 (QTR2014-00349) Acceleration Factor = exp[1.6/8.6 e-5(1/418-1/448)] = 19.7 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (43,000x2938.6)+(45,000x2938.6)+(80,000x58.6)+(80,000x19.7) = 2.65x108 hours Since there were no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 85°C package backside temp; Failure Rate 60 = [(2)60,2]/(2X 2.65x108 )] = 1.8/ 5.30x108 = 3.45x10-9 failures/hour or 3.5 FIT or MTTF = 2.89x108 Hours 90 = [(2)90,2]/(2X 2.65x108 )] = 4.6/ 5.30x108 = 8.70x10-9 failures/hour or 8.7 FIT or MTTF = 1.15x108 Hours