Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC490LP5 / 490LP5E v04.0213 LOW NOISE AMPLIFIER - SMT GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Typical Applications Features The HMC490LP5(E) is ideal for: Noise Figure: 2.5 dB • Point-to-Point Radios P1dB Output Power: +25 dBm • Point-to-Multi-Point Radios Gain: 23 dB • VSAT Output IP3: +34 dBm +5V Supply • Military EW, ECM & C I 3 50 Ohm Matched Input/Output 32 Lead 5x5mm SMT Package: 25mm² Functional Diagram General Description The HMC490LP5(E) is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier which operates between 12 and 16 GHz. The HMC490LP5(E) provides 23 dB of gain, 2.5 dB noise figure and an output IP3 of +34 dBm from a +5V supply voltage. This versatile amplifier combines excellent, stable +25 dBm P1dB output power with very low noise figure making it ideal for receive and transmit applications. The amplifier is packaged in a leadless 5x5 mm QFN surface mount package. Electrical Specifications, TA = +25° C, Vdd = 5V, Idd = 200 mA* Parameter Min. Frequency Range Gain Typ. Max. 12 - 16 20 Units GHz 23 dB Gain Variation Over Temperature 0.03 0.04 dB/ °C Noise Figure 2.5 3.5 dB Input Return Loss 8 Output Return Loss 8 dB 25 dBm 27 dBm Output Third Order Intercept (IP3) 34 dBm Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 200 mA Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 22 dB * Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC490LP5 / 490LP5E v04.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Broadband Gain & Return Loss Gain vs. Temperature 30 30 26 24 GAIN (dB) RESPONSE (dB) 20 10 0 22 20 18 16 14 -10 12 10 -20 8 8 10 12 14 16 18 20 10 11 12 FREQUENCY (GHz) S21 S11 15 16 17 18 +85 C -40 C Output Return Loss vs. Temperature 0 0 -2 -4 RETURN LOSS (dB) RETURN LOSS (dB) 14 +25 C S22 Input Return Loss vs. Temperature -4 -6 -8 -10 -8 -12 -16 -12 -20 -14 10 11 12 13 14 15 16 17 18 10 11 12 +25 C 13 14 15 16 17 18 FREQUENCY (GHz) FREQUENCY (GHz) +85 C +25 C -40 C Noise Figure vs. Temperature +85 C -40 C Output IP3 vs. Temperature 40 10 35 8 30 IP3 (dBm) NOISE FIGURE (dB) 13 FREQUENCY (GHz) LOW NOISE AMPLIFIER - SMT 28 6 4 25 20 2 15 0 10 10 11 12 13 14 15 16 17 18 10 11 12 FREQUENCY (GHz) +25 C +85 C 13 14 15 16 17 18 FREQUENCY (GHz) -40 C +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC490LP5 / 490LP5E v04.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz 32 28 28 24 24 20 20 Psat (dBm) P1dB (dBm) Psat vs. Temperature 32 16 12 16 12 8 8 4 4 0 0 10 11 12 13 14 15 16 17 18 10 11 12 13 FREQUENCY (GHz) +85 C +25 C -40 C GAIN (dB), IP3 (dBm) Gain, Noise Figure & OIP3 vs. Supply Voltage @ 14 GHz, Idd= 200 mA 40 5 36 4 32 3 28 2 24 1 4 4.5 Vdd (V) 16 17 18 5 +85 C -40 C 30 25 20 15 10 5 0 -20 0 20 3.5 15 Power Compression @ 14 GHz Pout (dBm), GAIN (dB), PAE (%) +25 C 14 FREQUENCY (GHz) NOISE FIGURE (dB) LOW NOISE AMPLIFIER - SMT P1dB vs. Temperature 5.5 -15 -10 -5 0 5 10 INPUT POWER (dBm) Gain IP3 Pout Gain PAE Noise Figure Gain, Noise Figure & IP3 vs. Supply Current @ 14 GHz, Vdd= 5V* 40 5 36 4 32 3 28 2 Power Dissipation 2 1 20 0 POWER DISSIPATION (W) 24 NOISE FIGURE (dB) GAIN (dB), IP3 (dBm) 1.8 1.6 1.4 1.2 1 0.8 0.6 3.5 4 4.5 Vdd (V) 5 Gain 5.5 -15 -10 -5 0 5 10 INPUT POWER (dBm) IP3 Noise Figure 0.4 -20 Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz * Idd is controlled by varying Vgg 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC490LP5 / 490LP5E v04.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Reverse Isolation vs. Temperature 0 LOW NOISE AMPLIFIER - SMT ISOLATION (dB) -10 -20 -30 -40 -50 -60 -70 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +25 C Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5V Gate Bias Voltage (Vgg) -4 to 0V RF Input Power (RFIN)(Vdd = +5V) +10 dBm Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 17.9 mW/°C above 85 °C) 1.6 W Thermal Resistance (channel to ground paddle) 56 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C +85 C -40 C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +3.0 140 +3.5 154 +4.0 168 +4.5 188 +5.0 200 +5.5 208 Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC490LP5 / 490LP5E v04.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz LOW NOISE AMPLIFIER - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC490LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC490LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H490 XXXX H490 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC490LP5 / 490LP5E v04.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Pin Descriptions Function Description 1, 2, 6 - 12, 14 - 19, 23, 24, 26, 27, 29 - 31 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 3, 5, 20, 22 GND Package bottom must also be connected to RF/DC ground. 4 RFIN This pad is AC coupled and matched to 50 Ohms. 13 Vgg Gate control for amplifier. Adjust to achieve Idd of 200 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.01 µF are required. 21 RFOUT This pad is AC coupled and matched to 50 Ohms. 25, 28, 32 Vdd3, 2, 1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 µF are required. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] LOW NOISE AMPLIFIER - SMT Pin Number 6 HMC490LP5 / 490LP5E v04.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz LOW NOISE AMPLIFIER - SMT Evaluation PCB List of Materials for Evaluation PCB 108402 Item Description J1 - J2 PCB Mount SMA Connector J3 - J8 DC Pin C1 - C4 1000 pF Capacitor, 0402 Pkg. C5 - C8 4.7 µF Capacitor, Tantalum U1 HMC490LP5 / HMC490LP5E PCB [2] 108540 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 7 [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC490LP5 / 490LP5E v04.0213 GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz LOW NOISE AMPLIFIER - SMT Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8