Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC608LC4 v03.0514 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Typical Applications Features The HMC608LC4 is ideal for: Output IP3: +33 dBm • Point-to-Point Radios Saturated Power: +27.5 dBm @ 23% PAE • Point-to-Multi-Point Radios Gain: 29.5 dB • Military End-Use Supply: +5V @ 310 mA 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm SMT Package Functional Diagram General Description The HMC608LC4 is a high dynamic range GaAs pHEMT MMIC Medium Power Amplifier housed in a leadless “Pb free” SMT package. The amplifier has two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left open). The electrical specifications in the table below are shown for the amplifier operating in high gain mode. Operating from 9.5 to 11.5 GHz, the amplifier provides 29.5 dB of gain, +27.5 dBm of saturated power and 23% PAE from a +5V supply voltage. Noise figure is 6 dB while output IP3 is +33 dBm. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC608LC4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1], Vpd = GND [2] Parameter Min. Frequency Range Gain [3] 27 Gain Variation Over Temperature Output Third Order Intercept (IP3) 23 Units GHz dB 0.03 13 Output Return Loss Saturated Output Power (Psat) Max. 29.5 0.02 Input Return Loss Output Power for 1 dB Compression (P1dB) Typ. 9.5 - 11.5 dB/ °C dB 19 dB 27 dBm 27.5 dBm 33 dBm Noise Figure 6.0 Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3] 310 dB 350 mA [[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical. [2] Vpd= ground for high gain mode, Vpd = open for low gain mode. [3] In low gain mode, typical gain is 22 dB and typical current is 67 mA. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC608LC4 v03.0514 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Gain vs. Temperature 32 S21 S11 S22 30 28 +25C +85C -40C 26 24 7 8 9 10 11 12 13 9 14 9.5 Input Return Loss vs. Temperature 11 11.5 0 -5 RETURN LOSS (dB) -4 RETURN LOSS (dB) 10.5 Output Return Loss vs. Temperature 0 -8 -12 +25C +85C -40C -16 +25C +85C -40C -10 -15 -20 -25 -20 -30 9 9.5 10 10.5 11 11.5 9 9.5 FREQUENCY (GHz) 30 30 25 25 Psat (dBm) 35 20 +25C +85C -40C 10 10.5 11 11.5 11 11.5 Psat vs. Temperature 35 15 10 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 10 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - SMT 34 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 20 15 +25C +85C -40C 10 5 5 0 0 9 9.5 10 10.5 FREQUENCY (GHz) 11 11.5 9 9.5 10 10.5 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC608LC4 v03.0514 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Output IP3 vs. Temperature Noise Figure vs. Temperature 10 8 NOISE FIGURE (dB) IP3 (dBm) 30 +25C +85C -40C 20 10 4 +25C +85C -40C 0 9 9.5 10 10.5 11 9 11.5 9.5 10 Gain, Power & Output IP3 vs. Supply Voltage @ 10.3 GHz 11 11.5 Reverse Isolation vs. Temperature 35 0 -10 ISOLATION (dB) 33 31 Gain P1dB Psat IP3 29 -20 +25C +85C -40C -30 -40 -50 27 -60 25 4.5 5 -70 5.5 9 9.5 10 Vdd Supply Voltage (Vdc) 4 30 3.5 25 20 15 10 Pout Gain PAE 5 -18 -16 -14 -12 -10 -8 Pin (dBm) -6 11 11.5 Power Dissipation 35 0 -20 10.5 FREQUENCY (GHz) POWER DISSIPATION (W) Pout (dBm), GAIN (dB), PAE (%) 10.5 FREQUENCY (GHz) FREQUENCY (GHz) Power Compression @ 10.3 GHz 3 6 2 0 GAIN (dB), P1dB(dBm), Psat (dBm), IP3(dBm) AMPLIFIERS - LINEAR & POWER - SMT 40 -4 -2 0 2 9 GHz 9.5 GHz 10 GHz 10.5 GHz 11.0 GHz 11.5 GHz 3 2.5 2 1.5 1 -30 -25 -20 -15 -10 -5 0 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC608LC4 v03.0514 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Low Gain Mode, Broadband Gain & Return Loss Low Gain Mode, Gain vs. Temperature 26 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 15 -5 22 18 -15 +25C +85C -40C 14 -25 10 -35 7 8 9 10 11 12 13 9 14 9.5 10.5 11 11.5 Low Gain Mode, Output Return Loss vs. Temperature 0 0 -4 -5 RETURN LOSS (dB) RETURN LOSS (dB) Low Gain Mode, Input Return Loss vs. Temperature -8 -12 +25C +85C -40C -16 10 FREQUENCY (GHz) FREQUENCY (GHz) -20 +25C +85C -40C -10 -15 -20 -25 -24 -30 9 9.5 10 10.5 FREQUENCY (GHz) 11 11.5 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] AMPLIFIERS - LINEAR & POWER - SMT 30 25 4 HMC608LC4 v03.0514 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz AMPLIFIERS - LINEAR & POWER - SMT Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) 7 Vdc Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +5Vdc) Typical Supply Current vs. Vdd Vdd (Vdc) Idd (mA) -4.0 to -1.0 Vdc +4.5 300 +10 dBm +5.0 310 Channel Temperature 175 °C +5.5 325 Continuous Pdiss (T= 85 °C) (derate 22.18 mW/°C above 85 °C) 2W Thermal Resistance (channel to ground paddle) 45 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 310 mA at +5V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC608LC4 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H608 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC608LC4 v03.0514 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz Pin Descriptions Function Description 1 Vgg Gate control for amplifier. Adjust to achieve Id of 310 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF, 1000 pF and 2.2 µF are required. 2, 3, 7 - 12, 16 - 18, 22, 24 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 4, 6, 13, 15 GND Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. 5 RFIN This pin is AC coupled and matched to 50 Ohms. 14 RFOUT This pin is AC coupled and matched to 50 Ohms. 21, 20, 19 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 µF are required. 23 Vpd High gain (connect to ground) / low gain mode pin control (open circuit). External bypass capacitors of 100 pF, 1000 pF and 2.2 µF are required. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] AMPLIFIERS - LINEAR & POWER - SMT Pin Number 6 HMC608LC4 v03.0514 GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz AMPLIFIERS - LINEAR & POWER - SMT Evaluation PCB List of Materials for Evaluation PCB 112763 [1] Item Description J1, J2 PC mount SMA connector J3 - J8 DC Pin C1 - C6 100 pF capacitor, 0402 pkg. C6 - C10 1,000 pF Capacitor, 0603 pkg. C11 - C15 2.2µF Capacitor, Tantalum U1 HMC608LC4 Amplifier PCB [2] 112761 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. 7 The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC608LC4 v03.0514 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8