ENA1897 D

Ordering number : ENA1897A
SFT1445
N-Channel Power MOSFET
http://onsemi.com
100V, 17A, 111mΩ, Single TP/TP-FA
Features
•
•
ON-resistance RDS(on)1=85mΩ(typ.)
Halogen free compliance
•
•
Input Capacitance Ciss=1030pF(typ.)
Protection diode in
4V drive
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (PW≤10μs)
100
V
±20
V
17
A
PW≤10μs, duty cycle≤1%
68
A
1.0
W
Allowable Power Dissipation
PD
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Tc=25°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7518-004
7003-004
5.5
7.0
5.5
4
0.85
0.7
0.5
1.5
1.5
4
0.5
0.6
1
2
2.3
2
3
0 to 0.2
0.6
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
3
2.5
0.8
1
7.5
0.8
1.6
0.85
1.2
1.2
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
TP-FA
TP
2.3
SFT1445-TL-H
2.3
6.5
5.0
1.2
SFT1445-H
0.5
7.0
2.3
6.5
5.0
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
T1445
2,4
Electrical Connection
1
LOT No.
TL
3
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/D2210PA TKIM TC-00002529 No. A1897-1/9
SFT1445
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
RDS(on)1
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Conditions
Ratings
min
typ
Unit
max
100
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
V
1.2
1
μA
±10
μA
2.6
V
VDS=10V, ID=8.5A
ID=8.5A, VGS=10V
8.9
S
85
111
mΩ
ID=4A, VGS=4.5V
ID=4A, VGS=4V
90
126
mΩ
93
130
mΩ
1030
pF
78
pF
Crss
42
pF
td(on)
tr
10
ns
35
ns
60
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=50V, VGS=10V, ID=17A
60
ns
19
nC
3.6
nC
3.8
IS=17A, VGS=0V
0.96
nC
1.2
V
Switching Time Test Circuit
10V
0V
VDD=50V
VIN
ID=8.5A
RL=5.9Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
SFT1445
P.G
50Ω
S
Ordering Information
Device
SFT1445-H
SFT1445-TL-H
Package
Shipping
TP
500pcs./bag
TP-FA
700pcs./reel
memo
Pb Free and Halogen Free
No. A1897-2/9
SFT1445
ID -- VDS
10
12
10
V
8
6
3.0V
4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
6
0
2.0
180
ID=4.0A
8.5A
140
120
100
80
60
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
10
7
5
°C
--25
Tc=
C
75°
3
2
1.0
7
5
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5 7 100
IT16193
SW Time -- ID
1000
7
5
VDD=50V
VGS=10V
100
7
5
td(off)
tf
3
2
tr
td(on)
10
7
5
1.0
0.1
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT16195
4.0
IT16190
.0A
=4
, ID
V
.5
A
140
.0
=4
, ID
V
.0
120
=4
S
VG
100
=4
S
VG
.5A
=8
, ID
V
0
.
80
0
1
S=
60
VG
40
20
--40
--20
0
20
40
60
80
100
120
140
160
IT16192
IS -- VSD
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
Ciss, Coss, Crss -- VDS
10000
7
5
1.2
IT16194
f=1MHz
3
2
Ciss
1000
7
5
3
2
100
7
5
Coss
Crss
3
2
3
2
3.5
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
3
2
3.0
160
0.01
7
5
3
2
0.001
2
2
2.5
180
100
7
5
3
2
3
0.1
0.1
2.0
Case Temperature, Tc -- °C
Source Current, IS -- A
25°C
1.5
RDS(on) -- Tc
0
--60
16
VDS=10V
3
2
1.0
IT16191
| yfs | -- ID
100
7
5
0.5
200
Tc=25°C
160
0
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
8
IT16189
RDS(on) -- VGS
200
Forward Transfer Admittance, | yfs | -- S
10
2
VGS=2.5V
Drain-to-Source Voltage, VDS -- V
40
12
--25°
C
0
14
4
2
Switching Time, SW Time -- ns
16
V
4.5 3.5V
V
0
6.
.0
16
18
V
4.0
C --25°C
V
.0
Tc=
75°
C
25°C
Drain Current, ID -- A
8.0
VDS=10V
25 °
V
14
ID -- VGS
20
Tc=
75
°C
Tc=25°C
Drain Current, ID -- A
17
16
10
0
10
20
30
40
50
60
70
80
Drain-to-Source Voltage, VDS -- V
90
100
IT16196
No. A1897-3/9
SFT1445
VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
Total Gate Charge, Qg -- nC
PD -- Ta
18
20
0.6
0.4
0.2
0
20
40
60
80
100
ID=17A
10
7
5
3
2
DC
1.0
7
5
3
2
120
Ambient Temperature, Ta -- °C
140
160
IT16199
1m
s
ms
ope
ion
10
Operation in
this area is
limited by RDS(on).
0.1
7
5
3
2
s
0μ
s
10
rat
0m
s
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
Drain-to-Source Voltage, VDS -- V
PD -- Tc
40
0.8
0
10
IT16197
1.0
10μ
IDP=68A (PW≤10μs)
0.01
0.1
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.2
ASO
100
7
5
3
2
VDS=50V
ID=17A
3
5 7 100
IT16198
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT16200
No. A1897-4/9
SFT1445
Taping Specification
SFT1445-TL-H
No. A1897-5/9
SFT1445
Outline Drawing
SFT1445-TL-H
Land Pattern Example
Mass (g) Unit
0.282 mm
* For reference
Unit: mm
7.0
7.0
2.5
2.0
1.5
2.3
2.3
No. A1897-6/9
SFT1445
Bag Packing Specification
SFT1445-H
No. A1897-7/9
SFT1445
Outline Drawing
SFT1445-H
Mass (g) Unit
0.315 mm
* For reference
No. A1897-8/9
SFT1445
Note on usage : Since the SFT1445 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A1897-9/9
Similar pages