Ordering number : ENA1897A SFT1445 N-Channel Power MOSFET http://onsemi.com 100V, 17A, 111mΩ, Single TP/TP-FA Features • • ON-resistance RDS(on)1=85mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=1030pF(typ.) Protection diode in 4V drive • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) 100 V ±20 V 17 A PW≤10μs, duty cycle≤1% 68 A 1.0 W Allowable Power Dissipation PD 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-004 7003-004 5.5 7.0 5.5 4 0.85 0.7 0.5 1.5 1.5 4 0.5 0.6 1 2 2.3 2 3 0 to 0.2 0.6 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.5 0.8 1 7.5 0.8 1.6 0.85 1.2 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain TP-FA TP 2.3 SFT1445-TL-H 2.3 6.5 5.0 1.2 SFT1445-H 0.5 7.0 2.3 6.5 5.0 Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL T1445 2,4 Electrical Connection 1 LOT No. TL 3 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/D2210PA TKIM TC-00002529 No. A1897-1/9 SFT1445 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | RDS(on)1 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Conditions Ratings min typ Unit max 100 ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V VDS=10V, ID=8.5A ID=8.5A, VGS=10V 8.9 S 85 111 mΩ ID=4A, VGS=4.5V ID=4A, VGS=4V 90 126 mΩ 93 130 mΩ 1030 pF 78 pF Crss 42 pF td(on) tr 10 ns 35 ns 60 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=50V, VGS=10V, ID=17A 60 ns 19 nC 3.6 nC 3.8 IS=17A, VGS=0V 0.96 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=50V VIN ID=8.5A RL=5.9Ω VIN D PW=10μs D.C.≤1% VOUT G SFT1445 P.G 50Ω S Ordering Information Device SFT1445-H SFT1445-TL-H Package Shipping TP 500pcs./bag TP-FA 700pcs./reel memo Pb Free and Halogen Free No. A1897-2/9 SFT1445 ID -- VDS 10 12 10 V 8 6 3.0V 4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 6 0 2.0 180 ID=4.0A 8.5A 140 120 100 80 60 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 10 7 5 °C --25 Tc= C 75° 3 2 1.0 7 5 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT16193 SW Time -- ID 1000 7 5 VDD=50V VGS=10V 100 7 5 td(off) tf 3 2 tr td(on) 10 7 5 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT16195 4.0 IT16190 .0A =4 , ID V .5 A 140 .0 =4 , ID V .0 120 =4 S VG 100 =4 S VG .5A =8 , ID V 0 . 80 0 1 S= 60 VG 40 20 --40 --20 0 20 40 60 80 100 120 140 160 IT16192 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 Ciss, Coss, Crss -- VDS 10000 7 5 1.2 IT16194 f=1MHz 3 2 Ciss 1000 7 5 3 2 100 7 5 Coss Crss 3 2 3 2 3.5 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF 3 2 3.0 160 0.01 7 5 3 2 0.001 2 2 2.5 180 100 7 5 3 2 3 0.1 0.1 2.0 Case Temperature, Tc -- °C Source Current, IS -- A 25°C 1.5 RDS(on) -- Tc 0 --60 16 VDS=10V 3 2 1.0 IT16191 | yfs | -- ID 100 7 5 0.5 200 Tc=25°C 160 0 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 8 IT16189 RDS(on) -- VGS 200 Forward Transfer Admittance, | yfs | -- S 10 2 VGS=2.5V Drain-to-Source Voltage, VDS -- V 40 12 --25° C 0 14 4 2 Switching Time, SW Time -- ns 16 V 4.5 3.5V V 0 6. .0 16 18 V 4.0 C --25°C V .0 Tc= 75° C 25°C Drain Current, ID -- A 8.0 VDS=10V 25 ° V 14 ID -- VGS 20 Tc= 75 °C Tc=25°C Drain Current, ID -- A 17 16 10 0 10 20 30 40 50 60 70 80 Drain-to-Source Voltage, VDS -- V 90 100 IT16196 No. A1897-3/9 SFT1445 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC PD -- Ta 18 20 0.6 0.4 0.2 0 20 40 60 80 100 ID=17A 10 7 5 3 2 DC 1.0 7 5 3 2 120 Ambient Temperature, Ta -- °C 140 160 IT16199 1m s ms ope ion 10 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 s 0μ s 10 rat 0m s Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V PD -- Tc 40 0.8 0 10 IT16197 1.0 10μ IDP=68A (PW≤10μs) 0.01 0.1 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 ASO 100 7 5 3 2 VDS=50V ID=17A 3 5 7 100 IT16198 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16200 No. A1897-4/9 SFT1445 Taping Specification SFT1445-TL-H No. A1897-5/9 SFT1445 Outline Drawing SFT1445-TL-H Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. A1897-6/9 SFT1445 Bag Packing Specification SFT1445-H No. A1897-7/9 SFT1445 Outline Drawing SFT1445-H Mass (g) Unit 0.315 mm * For reference No. A1897-8/9 SFT1445 Note on usage : Since the SFT1445 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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