SFT1345 D

SFT1345
Power MOSFET
–100V, 275mΩ, –11A, Single P-Channel
This P-Channel Power MOSFET is produced using ON Semiconductor’s
trench technology, which is specifically designed to minimize gate charge
and low on resistance. This device is suitable for applications with low gate
charge driving or low on resistance requirements.
Features
 Low On-Resistance
 4V drive
 100% Avalanche Tested
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
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VDSS
RDS(on) Max
275mΩ@ 10V
ID Max
100V
315mΩ@ 4.5V
11A
330mΩ@ 4V
ELECTRICAL CONNECTION
P-Channel
Typical Applications
 Reverse Battery Protection
 Load Switch
2,4
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS
ID
20
V
11
A
IDP
44
A
1.0
W
35
W
150
C
Drain Current (DC)
Drain Current
PW  10s, duty cycle  1%
Power Dissipation
Tc=25C
Junction Temperature
PD
Tj
3
PACKING TYPE : TL
LOT No.
TL
Parameter
Symbol
Value
Unit
RJC
3.57
RJA
125
© Semiconductor Components Industries, LLC, 2016
February 2016 - Rev. 1
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THERMAL RESISTANCE RATINGS
Junction to Ambient (Note 2)
Note 2 : Insertion mounted
MARKING
T1345
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Junction to Case Steady State
1 : Gate
2 : Drain
3 : Source
4 : Drain
1
1
2
3
IPAK(TP)
2
3
DPAK(TP-FA)
C/W
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
1
Publication Order Number :
SFT1345/D
SFT1345
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3)
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
Gate Threshold Voltage
Forward Transconductance
Conditions
Value
min
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=16V, VDS=0V
100
VDS=10V, ID=1mA
1.2
typ
max
Unit
V
1
A
10
A
2.6
V
VDS=10V, ID=5.5A
8.5
RDS(on)1
RDS(on)2
ID=5.5A, VGS=10V
210
275
m
ID=3A, VGS=4.5V
225
315
m
RDS(on)3
Ciss
ID=3A, VGS=4V
235
330
m
Output Capacitance
Coss
VDS=20V, f=1MHz
72
pF
Reverse Transfer Capacitance
Crss
43
pF
Turn-ON Delay Time
td(on)
9.5
ns
Rise Time
tr
25
ns
Turn-OFF Delay Time
td(off)
Fall Time
tf
Static Drain to Source On-State
Resistance
Input Capacitance
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
1020
See specified Test Circuit
VDS=50V, VGS=10V, ID=11A
S
pF
105
ns
55
ns
21
nC
3.6
nC
4.5
nC
VSD
Forward Diode Voltage
IS=11A, VGS=0V
0.93
1.5
V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--10V
VDD= --50V
VIN
ID= --5.5A
RL=9.1
VIN
D
VOUT
PW=10s
D.C.≤1%
G
SFT1345
P.G
50
S
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2
SFT1345
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3
SFT1345
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SFT1345
PACKAGE DIMENSIONS
unit : mm
DPAK / TP-FA
CASE 369AH
ISSUE O
to
1 : Gate
2 : Drain
3 : Source
4 : Drain
Recommended
Soldering Footprint
7.0
7.0
2.5
2.0
1.5
2.3
2.3
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SFT1345
PACKAGE DIMENSIONS
unit : mm
IPAK / TP
CASE 369AJ
ISSUE O
1 : Gate
2 : Drain
3 : Source
4 : Drain
ORDERING INFORMATION
Device
Package
Shipping (Qty / Packing)
IPAK / TP
500 / Bag
(Pb-Free / Halogen Free)
DPAK / TP-FA
700 / Tape & Reel
SFT1345-TL-H
T1345
(Pb-Free / Halogen Free)
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
SFT1345-H
Marking
T1345
Note on usage : Since the SFT1345 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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