2SB1216 2SD1816-D

2SB1216, 2SD1816
Bipolar Transistor
(−)100V, (−)4A, Low VCE(sat),
(PNP)NPN Single
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Features
• Low Collector to Emitter Saturation Voltage
• Small and Slim Package Facilitating Compactness of Sets
• High fT
• Good Linearity of hFE
• Fast Switching Time
ELECTRICAL CONNECTION
2,4
2,4
1
Typical Applications
• Suitable for Relay Drivers
• High Speed Inverters
• Converters
• Other General High Current Switching Applications
1
3
3
2SB1216
2SD1816
1 : Base
2 : Collector
3 : Emitter
4 : Collector
MARKING
SPECIFICATIONS ( ) : 2SB1216
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Value
Unit
(−) 120
V
(−) 100
V
(−) 6
V
(−) 4
A
(−) 8
A
1
W
Collector Dissipation
PC
Tc=25°C
20
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
B1216
LOT No.
RANK
D1816
LOT No.
RANK
4
4
1
1
2
3
IPAK / TP
2
3
DPAK / TP-FA
ORDERING INFORMATION
See detailed ordering and shipping
information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
March 2016 - Rev. 2
1
Publication Order Number :
2SB1216_2SD1816/D
2SB1216, 2SD1816
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(−)100V, IE=0A
(−)1
μA
Emitter Cutoff Current
IEBO
VEB=(−)4V, IC=0A
(−)1
μA
DC Current Gain
hFE1
hFE2
VCE=(−)5V, IC=(−)0.5A
VCE=(−)5V,IC=(−)3A
Gain-Bandwidth Product
fT
Output Capacitance
Cob
VCE=(−)10V, IC=(−)0.5A
VCB=(−)10V, f=1MHz
Collector to Emitter Saturation
Voltage
VCE(sat)
IC=(−)2A, IB=(−)0.2A
(−200) 150
(−500) 400
Base to Emitter Saturation Voltage
VBE(sat)
IC=(−)2A, IB=(−)0.2A
(−) 0.9
(−) 1.2
V(BR)CBO
IC=(−)10μA, IE=0A
(−)120
V
V(BR)CEO
IC=(−)1mA, RBE=∞
(−)100
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE=(−)10μA, IC=0A
Turn-On Time
ton
tstg
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Storage Time
See specified Test
Circuit
140*
400*
40
(130) 180
MHz
(65) 40
(−) 6
pF
mV
V
V
100
ns
(800) 900
ns
Fall Time
50
tf
ns
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*: The 2SB1216/2SD1816 are classified by 0.5A hFE as follows:
Rank
S
T
hFE
140 to 280
200 to 400
Fig.1 Switching Time Test Circuit
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2
2SB1216, 2SD1816
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3
2SB1216, 2SD1816
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4
2SB1216, 2SD1816
PACKAGE DIMENSIONS
unit : mm
IPAK / TP
CASE 369AJ
ISSUE O
1 : Base
2 : Collector
3 : Emitter
4 : Collector
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5
2SB1216, 2SD1816
PACKAGE DIMENSIONS
unit : mm
DPAK / TP-FA
CASE 369AH
ISSUE O
1 : Base
2 : Collector
3 : Emitter
4 : Collector
Recommended
Soldering Footprint
7.0
7.0
2.5
2.0
1.5
2.3
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6
2.3
2SB1216, 2SD1816
ORDERING INFORMATION
Device
2SB1216S-E
Marking
Package
Shipping (Qty / Packing)
B1216
2SB1216T-E
B1216
2SD1816S-E
D1816
2SD1816T-E
D1816
2SB1216S-H
B1216
2SB1216T-H
B1216
2SD1816S-H
D1816
2SD1816T-H
D1816
2SB1216S-TL-E
B1216
2SB1216T-TL-E
B1216
2SD1816S-TL-E
D1816
2SD1816T-TL-E
D1816
2SB1216S-TL-H
B1216
2SB1216T-TL-H
B1216
2SD1816S-TL-H
D1816
2SD1816T-TL-H
D1816
IPAK / TP
(Pb-Free)
500/ bag
IPAK / TP
(Pb-Free / Halogen Free)
DPAK / TP-FA
(Pb-Free)
700/ Tape & Reel
DPAK / TP-FA
(Pb-Free / Halogen Free)
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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