NTP5864N Power MOSFET 60 V, 63 A, 12.4 mW Features • • • • Low RDS(on) High Current Capability Avalanche Energy Specified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX (Note 1) 60 V 12.4 mΩ @ 10 V 63 A MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp = 10 s) VGS ±30 V ID 63 A Continuous Drain Current − RJC (Note 1) Power Dissipation − RJC (Note 1) Steady State Steady State Pulsed Drain Current TC = 25°C TC = 100°C TC = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 107 G IDM 252 A TJ, TSTG −55 to 175 °C IS 63 A EAS 80 mJ IAS 40 A TL 260 °C S W 54 MARKING DIAGRAM & PIN ASSIGNMENT THERMAL RESISTANCE RATINGS Symbol Max Units Junction−to−Case (Drain) − Steady State (Note 1) RθJC 1.4 °C/W Junction−to−Ambient − Steady State (Note 1) RθJA 33 °C/W 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). TO−220AB CASE 221A STYLE 5 1 2 3 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package 3 Source 2 Drain ORDERING INFORMATION NTP5864NG January, 2015 − Rev. 1 NTP5864NG AYWW 1 Gate Device © Semiconductor Components Industries, LLC, 2015 4 Drain 4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Parameter D 45 PD TC = 100°C tp = 10 s N−Channel 1 Package Shipping TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: NTP5864N/D NTP5864N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS V 58 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V TJ = 25°C Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 A mV/°C 1.0 A ±100 nA 4.0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ 2.0 −10 mV/°C RDS(on) VGS = 10 V, ID = 20 A 10.2 12.4 gFS VDS = 15 V, ID = 20 A 10 S 1680 pF m CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = 25 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 124 Total Gate Charge QG(TOT) 31 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 10 Rg 0.5 10 ns Gate Resistance VGS = 10 V, VDS = 48 V, ID = 20 A 189 nC 2.0 7.3 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 10 V, VDD = 48 V, ID = 20 A, RG = 2.5 tf 6.4 18 4.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.94 TJ = 125°C 0.84 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 40 A 24 VGS = 0 V, dISD/dt = 100 A/s, IS = 20 A QRR www.onsemi.com 2 V ns 16 7.9 20 2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTP5864N TYPICAL CHARACTERISTICS 125 125 7.5 V VDS ≥ 10 V TJ = 25°C 7V 100 6.5 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 10 V 5.5 V 75 5.0 V 50 4.5 V 25 100 75 50 TJ = 25°C 25 TJ = 125°C 0 1 2 3 4 2 5 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.030 ID = 20 A TJ = 25°C 0.025 0.020 0.015 0.010 0.005 0.000 4 5 6 7 8 9 10 7 0.0115 VGS = 10 V TJ = 25°C 0.0110 0.0105 0.0100 0.0095 10 15 20 VGS, GATE−TO−SOURCE VOLTAGE (V) 25 30 35 40 45 50 55 60 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current 100000 2.2 2.0 4 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0 ID = 20 A VGS = 10 V VGS = 0 V 1.8 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 0 1.6 1.4 1.2 1.0 10000 TJ = 150°C TJ = 125°C 1000 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 100 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 60 NTP5864N TYPICAL CHARACTERISTICS 10 2500 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C 2000 Ciss 1500 1000 500 Coss 0 0 Crss 10 20 30 40 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 60 QT 8 6 Qgs 4 2 ID = 20 A TJ = 25°C 0 0 5 10 15 20 25 30 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 1000 100 VDD = 48 V ID = 20 A VGS = 10 V IS, SOURCE CURRENT (A) td(off) td(on) 10 VGS = 0 V TJ = 25°C 90 100 t, TIME (ns) Qgd tr tf 80 70 60 50 40 30 20 10 0 0.40 1 1 10 100 0.60 0.70 0.80 0.90 1.00 1.10 1.20 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 80 100 s 1 ms 10 ms dc 100 10 s 10 VGS = 10 V SINGLE PULSE TC = 25°C 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 ID = 40 A 70 AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.50 10 100 60 50 40 30 20 10 0 25 50 75 100 125 150 175 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature www.onsemi.com 4 NTP5864N TYPICAL CHARACTERISTICS RJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) Figure 13. Thermal Response www.onsemi.com 5 0.1 1 10 NTP5864N PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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