ONSEMI NTP5404NRG

NTB5404N, NTP5404N
Power MOSFET
40 V, 136 A, Single N−Channel, D2PAK &
TO−220
Features
•
•
•
•
Low RDS(on)
High Current Capability
Low Gate Charge
This is a Pb−Free Device
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V(BR)DSS
RDS(ON) TYP
ID MAX
(Note 1)
40 V
3.5 mΩ @ 10 V
136 A
Applications
D
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
N−Channel
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
136
A
PD
167
Continuous Drain
Current − RJC (Note 1)
Steady
State
Power Dissipation −
RJC (Note 1)
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
TC = 25°C
tp = 10 s
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 45 A,
L = 1 mH, RG = 25 )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
W
IDM
258
A
TJ,
TSTG
−55 to
175
°C
IS
75
A
EAS
1000
mJ
TL
260
°C
THERMAL RESISTANCE RATINGS
Junction−to−Case (Drain)
MARKING
DIAGRAMS
96
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Parameter
S
Symbol
Max
Units
RθJC
0.9
°C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
D2PAK
CASE 418B
STYLE 2
2
NTB5404NG
AYWW
3
1
4
TO−220AB
CASE 221A
STYLE 5
1
2
NTP5404NRG
AYWW
3
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTB5404NT4G
D2PAK
800 / Tape & Reel
(Pb−Free)
NTP5404NRG
TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 2
1
Publication Order Number:
NTB5404N/D
NTB5404N, NTP5404N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
34
IDSS
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 100°C
10
IGSS
VDS = 0 V, VGS = ±30 V
VGS(TH)
VGS = VDS, ID = 250 A
±100
A
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
1.5
3.5
−8.2
RDS(on)
gFS
V
mV/°C
VGS = 10 V, ID = 40 A
3.5
4.5
VGS = 5.0 V, ID = 15 A
5.1
7.0
VDS = 10 V, ID = 15 A
35
m
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 32 V
4300
7000
1075
1700
450
1000
Total Gate Charge
QG(TOT)
125
Threshold Gate Charge
QG(TH)
5.5
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 10 V, VDS = 32 V,
ID = 40 A
pF
nC
12.5
55
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
ns
10
VGS = 10 V, VDD = 32 V,
ID = 40 A, RG = 2.5 tf
65
85
85
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
ns
25
VGS = 5 V, VDD = 20 V,
ID = 20 A, RG = 2.5 tf
175
46
62
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 20 A
TJ = 25°C
0.8
TJ = 125°C
0.65
tRR
ta
tb
75
VGS = 0 V, dISD/dt = 100 A/s,
IS = 20 A
QRR
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2
V
ns
38
38
140
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.1
nC
NTB5404N, NTP5404N
TYPICAL PERFORMANCE CURVES
175
200
TJ = 25°C
VGS = 8 V to 10 V
7V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
200
6V
150
5V
125
4.8 V
100
4.6 V
75
4.4 V
4.2 V
4V
3.8 V
50
25
0
0
2
1
3
5
4
6
8
7
9
VDS ≥ 10 V
175
150
125
100
75
50
TJ = 25°C
25
TJ = 125°C
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
6
7
8
9
3
5
4
1
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.01
ID = 40 A
TJ = 25°C
0.008
0.007
0.006
0.005
0.004
0.003
0.002
3
5
4
7
6
9
8
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.01
0.008
0.007
VGS = 5 V
0.006
0.005
0.004
0.003
VGS = 10 V
0.002
0.001
20 30
40
50
60
100000
1.4
1.2
1
90 100 110 120 130 140
VGS = 0 V
TJ = 175°C
10000
1.6
80
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID = 40 A
VGS = 10 V
1.8
70
ID, DRAIN CURRENT (AMPS)
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2
TJ = 25°C
0.009
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.2
10
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
0.009
TJ = −55°C
0
1000
TJ = 100°C
100
0.8
0.6
−50
−25
0
25
50
75
100
150
125
175
10
4
8
12
16
20
24
28
32
36
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTB5404N, NTP5404N
VDS = 0 V VGS = 0 V
C, CAPACITANCE (pF)
10000
TJ = 25°C
Ciss
8000
6000
Crss
Ciss
4000
Coss
2000
0
10
Crss
5
0
5
VGS VDS
10
15
25
20
30
35
40
36
12
QT
10
VDS
8
12
4
2
ID = 40 A
TJ = 25°C
0
20
tf
tr
td(on)
10
1
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 25°C
35
30
25
20
15
10
5
0
0.4
100
0.5
0.7
0.6
0.8
0.9
1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
10 s
100
100 s
1 ms
10
10 ms
dc
VGS = 10 V
SINGLE PULSE
TC = 25°C
0.1
0.1
1.1
Figure 10. Diode Forward Voltage vs. Current
1000
1
0
140
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
ID, DRAIN CURRENT (AMPS)
t, TIME (ns)
100
80
100
120
40
60
QG, TOTAL GATE CHARGE (nC)
6
40
IS, SOURCE CURRENT (AMPS)
td(off)
24
QGD
Figure 7. Capacitance Variation
VDS = 32 V
ID = 40 A
VGS = 10 V
VGS
18
QGS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
30
6
0
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
12000
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
NTB5404N, NTP5404N
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
t, TIME (s)
Figure 12. Thermal Response
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5
0.1
RJC(t) = r(t) RJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RJC(t)
1.0
10
NTB5404N, NTP5404N
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
W
H
M
T B
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
M
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
SOLDERING FOOTPRINT*
VARIABLE
CONFIGURATION
ZONE
10.49
L
M
8.38
16.155
F
2X
3.504
VIEW W−W
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTB5404N, NTP5404N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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NTB5404N/D