Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC174MS8 / 174MS8E v04.0109 GaAs MMIC T/R SWITCH DC - 3 GHz Typical Applications Features The HMC174MS8(E) is ideal for: Low Insertion Loss: 0.5 dB • Infrastructure & Repeaters High Input IP3: +60 dBm • Cellular/3G & WiMAX Positive Control: 0/+3V to 0 /+8V • Portable Wireless High RF power Capability • LNA Protection MSOP - 8 SMT package, 14.8 mm2 • Automotive Telematics • Test Equipment General Description Functional Diagram The HMC174MS8 & HMC174MS8E are low-cost SPDT switches in 8-lead MSOP packages for use in transmit-receive applications which require very low distortion at high signal power levels. The device can control signals from DC to 3 GHz and is especially suited for cellular/3G and WiMAX applications with only 0.5 dB loss. The design provides exceptional intermodulation performance; providing a +60 dBm third order intercept at 8 Volt bias. RF1 and RF2 are reflective shorts when “OFF”. On chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. SWITCHES - SPDT T/R - SMT 11 Electrical Specifi cations, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency Insertion Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz Isolation DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz Return Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 21 21 18 15 Typ. Max. Units 0.4 0.5 0.8 1.3 0.7 0.8 1.1 1.8 dB dB dB dB 26 26 23 20 dB dB dB dB 25 20 15 12 dB dB dB dB Input Power for 1 dB Compression 0/8V Control 0.5 - 1.0 GHz 0.5 - 3.0 GHz 32 32 36 36 dBm dBm Input Third Order Intercept 0/8V Control 0.5 - 1.0 GHz 0.5 - 3.0 GHz 55 49 60 56 dBm dBm 10 24 ns ns Switching Characteristics DC - 3.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 11 - 2 Min. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC174MS8 / 174MS8E v04.0109 GaAs MMIC T/R SWITCH DC - 3 GHz Insertion Loss Isolation Between RFC & RF1/RF2 0 0 -10 -0.5 ISOLATION (dB) INSERTION LOSS (dB) -5 -1 +25C +85C -40C -1.5 +25C +85C -40C -15 -20 -25 -30 -35 -40 -2 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 0 2.5 3 3.5 4 11 0 -5 RETURN LOSS (dB) RF1 ON RF2 ON -15 -20 -25 -30 -35 -10 -15 -20 -25 -30 +25C +85C -40C -35 -40 -40 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 FREQUENCY (GHz) 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Input P1dB vs. Vdd Input P0.1dB vs. Vdd 45 40 40 P1dB (dBm) 45 35 30 25 35 30 3V 5V 8V 25 3V 5V 8V 20 SWITCHES - SPDT T/R - SMT -5 -10 ISOLATION (dB) 2 Return Loss RF1 to RF2 Isolation P0.1dB (dBm) 1.5 FREQUENCY (GHz) FREQUENCY (GHz) 20 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 3 HMC174MS8 / 174MS8E v04.0109 GaAs MMIC T/R SWITCH DC - 3 GHz Input P1dB vs. Temperature 45 45 40 40 P1dB (dBm) P0.1dB (dBm) Input P0.1dB vs. Temperature 35 30 +25C +85C -40C 25 35 30 +25C +85C -40C 25 20 20 0 0.5 1 1.5 2 2.5 3 0 0.5 FREQUENCY (GHz) 60 70 HARMONICS (dBc) 80 IP3 (dBm) 50 40 30 3v 5v 8v 10 2 2.5 60 50 40 30 2Fo 3Fo 20 10 0 0 0 0.5 1 1.5 2 2.5 3 3 4 5 6 7 Absolute Maximum Ratings 2nd & 3rd Harmonics @ 1900 MHz 80 Bias Voltage Range (Vdd) -0.2 to +10 Vdc 70 Control Voltage Range (A & B) -0.2 to +Vdd Vdc 60 Storage Temperature -65 to +150 °C 50 Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A 40 30 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 2Fo 3Fo 10 0 3 4 5 6 8 Vdd (VOLTS) FREQUENCY (GHz) 20 7 8 Vdd (VOLTS) 11 - 4 3 2nd & 3rd Harmonics @ 900 MHz 70 20 1.5 FREQUENCY (GHz) Input Third Order Intercept HARMONICS (dBc) SWITCHES - SPDT T/R - SMT 11 1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC174MS8 / 174MS8E v04.0109 GaAs MMIC T/R SWITCH DC - 3 GHz Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc Control Input* Vdd (Vdc) A (Vdc) Bias Current B (Vdc) Idd (uA) Control Current Signal Path State Ia (uA) Ib (uA) RF to RF1 RF to RF2 3 0 0 30 -15 -15 OFF OFF 3 0 Vdd 25 -25 0 ON OFF 3 Vdd 0 25 0 -25 OFF ON 5 0 0 110 -55 -55 OFF OFF 5 0 Vdd 115 -100 -15 ON OFF 5 Vdd 0 115 -15 -100 OFF ON 10 0 0 380 -190 -190 OFF OFF 10 0 Vdd 495 -275 -220 ON OFF 10 Vdd 0 495 -220 -275 OFF ON 5 -Vdd Vdd 600 -600 225 ON OFF 5 Vdd -Vdd 600 225 -600 OFF ON Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 11 SWITCHES - SPDT T/R - SMT Bias Package Information Part Number Package Body Material Lead Finish MSL Rating HMC174MS8 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC174MS8E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H174 XXXX [2] H174 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 5 HMC174MS8 / 174MS8E v04.0109 GaAs MMIC T/R SWITCH DC - 3 GHz Pin Descriptions Pin Number Function Description 1 A See truth table and control voltage table. 2 B See truth table and control voltage table. 3, 5, 8 RFC, RF1, RF2 This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required. 4 Vdd Supply Voltage. 6, 7 GND This pin must be connected to RF/DC ground. Interface Schematic Typical Application Circuit SWITCHES - SPDT T/R - SMT 11 Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +8V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 11 - 6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC174MS8 / 174MS8E v04.0109 GaAs MMIC T/R SWITCH DC - 3 GHz Evaluation Circuit Board List of Materials for Evaluation PCB 104124 [1] Item Description J1 - J3 PCB Mount SMA RF Connector J4 - J7 DC Pin C1 - C3 100 pF capacitor, 0402 Pkg. C4 10,000 pF capacitor, 0603 Pkg. U1 HMC174MS8(E) T/R Switch PCB [2] 104122 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. SWITCHES - SPDT T/R - SMT 11 [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 7