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HMC347C8
v01.0404
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Typical Applications
Features
The HMC347C8 is ideal for:
Isolation: 50 dB @ 2.5 GHz
36 dB @ 8 GHz
• Telecom Infrastructure
Insertion Loss: 2 dB Typical
• Microwave Radio & VSAT
Non-Reflective Design
• Military Radios, Radar & ECM
Surface Mount Ceramic Package
• Test Instrumentation
General Description
The HMC347C8 is a broadband high isolation nonreflective GaAs MESFET SPDT switch in a nonhermetic surface mount ceramic package. Covering
DC to 8 GHz, the switch features >50 dB isolation
up to 2 GHz and >35 dB isolation up to 8 GHz. The
switch operates using complementary negative
control voltage logic lines of -5/0V and requires no
bias supply. This SPDT is an excellent replacement
for the HMC132C8 SPDT.
SWITCHES - SMT
10
Functional Diagram
Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
10 - 214
Frequency
Min.
Typ.
Max.
Units
1.7
2.0
2.4
2.0
2.4
2.8
dB
dB
dB
Insertion Loss
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
Isolation
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
49
35
32
54
40
36
dB
dB
dB
10
7
6
13
10
9
dB
dB
dB
9
6
6
dB
dB
dB
Return Loss
“On State”
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
Return Loss RF1, RF2
“Off State”
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
Input Power for 1 dB Compression
0.5 - 8.0 GHz
19
23
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 8.0 GHz
38
43
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
3
6
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC347C8
v01.0404
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Insertion Loss
Isolation
0
0
-10
ISOLATION (dB)
-2
-3
RF1
RF2
-20
-30
-40
-50
+ 25C
+ 85C
- 40C
-4
-60
-70
-5
0
1
2
3
4
5
6
7
8
0
1
2
FREQUENCY (GHz)
Return Loss
3
4
5
FREQUENCY (GHz)
6
7
8
10
0.1 and 1 dB Input Compression Point
0
30
INPUT P1dB (dBm)
-5
-10
RFC
RF1, RF2 ON
RF1, RF2 OFF
-15
-20
25
20
15
10
0
1
2
3
4
5
6
7
8
0
1
2
3
FREQUENCY (GHz)
4
5
6
7
8
FREQUENCY (GHz)
Input Third Order Intercept Point
50
45
INPUT IP3 (dBm)
RETURN LOSS (dB)
1 dB Compression Point
0.1 dB Compression Point
SWITCHES - SMT
INSERTION LOSS (dB)
-1
40
+25C
+85C
-40C
35
30
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 215
HMC347C8
v01.0404
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Absolute Maximum Ratings
SWITCHES - SMT
10
Control Voltages
RF Input Power (Vctl = -5V)
+27 dBm
State
Bias Condition
Control Voltage Range (A & B)
+0.5V to -7.5 Vdc
Low
0 to -0.2V @ 10 uA Max.
Channel Temperature
150 °C
High
-5V @ 10 uA Typ. to -7V @ 40 uA Typ. (± 0.5 Vdc)
Thermal Resistance
(Insertion Loss Path)
440 °C/W
Thermal Resistance
(Terminated Path)
540 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Truth Table
Control Input
Signal Path State
A
B
RFC to RF1
RFC to RF2
High
Low
On
Off
Low
High
Off
On
Caution: Do not “Hot Switch” power levels greater than +13
dBm (Vctl = 0/-5 Vdc).
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92%
2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER
3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER
ELECTROLYTIC NICKEL 100-250 MICROINCHES.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID
SEAL PROTRUSION .005 PER SIDE.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
10 - 216
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC347C8
v01.0404
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Suggested Driver Circuit
Pin Descriptions
Pin Number
Function
Description
1, 4, 7
RFC, RF1, RF2
This pin is DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
2, 3, 8
GND
Package bottom must also
be connected to PCB RF ground.
5
CTLA
See truth table and control voltage table.
6
CTLB
See truth table and control voltage table.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SMT
10
10 - 217
HMC347C8
v01.0404
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Evaluation PCB
SWITCHES - SMT
10
List of Materials for Evaluation PCB 107261 [1]
Item
Description
J1 - J3
PCB Mount SMA RF Connector
J4 - J6
DC Pin
U1
HMC347C8 SPDT Switch
PCB [2]
102088 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
10 - 218
The circuit board used in the final application should
be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown above. The evaluation circuit board shown above is available from
Hittite Microwave Corporation upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC347C8
v01.0404
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
Notes:
SWITCHES - SMT
10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10 - 219