SPICE Device Model SiZ700DT Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics SUBCIRCUIT MODEL SCHEMATIC S1/D2 D1 D D R1 3 M2 G G1 Rg G G2 CGS Rg M1 R1 3 M2 DBD CGS DBD M1 S S S2 Note This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to the appropriate datasheet of the same number for guaranteed specification limits. Document Number: 65645 S09-2401-Rev. A, 16-Nov-09 www.vishay.com 1 SPICE Device Model SiZ700DT Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL SIMULATED MEASURED DATA DATA TEST CONDITIONS UNIT Static Gate-Source Threshold Voltage Drain-Source On-State Resistanceb VDS = VGS, ID = 250 µA VGS(th) RDS(on) Forward Transconductancea gfs Diode Forward Voltagea VSD Ch-1 1.3 - Ch-2 1.6 - VGS = 10 V, ID = 15 A Ch-1 0.007 0.007 VGS = 10 V, ID = 20 A Ch-2 0.0044 0.0047 VGS = 4.5 V, ID = 10 A Ch-1 0.0089 0.0088 VGS = 4.5 V, ID = 15 A Ch-2 0.0055 0.0054 VDS = 10 V, ID = 15 A Ch-1 48 60 VDS = 10 V, ID = 20 A Ch-2 72 100 IS = 2 A, VGS = 0 V Ch-1 0.74 0.80 IS = 2.3 A, VGS = 0 V Ch-2 0.72 0.80 Ch-1 1290 1300 V Ω S V Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Ciss Channel 1 VDS = 10 V, VGS = 0 V, f = 1 MHz Ch-2 3860 3860 Ch-1 293 290 Channel 2 VDS = - 10 V, VGS = 0 V, f = 1 MHz Ch-2 765 760 Ch-1 133 132 Ch-2 356 350 VDS = 10 V, VGS = 10 V, ID = 15 A Ch-1 20 20 VDS = 10 V, VGS = 10 V, ID = 20 A Ch-2 58 55 Ch-1 9.9 9.5 Ch-2 Channel 1 VDS = 10 V, VGS = 4.5 V, ID = 15 A Ch-1 28 27 3.2 3.2 Ch-2 Channel 2 VDS = 10 V, VGS = 4.5 V, ID = 20 A Ch-1 9.2 9.2 2.4 2.4 Ch-2 7.1 7.1 Coss Crss Qg Qgs Qgd pF nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 65645 S09-2401-Rev. A, 16-Nov-09 SPICE Device Model SiZ700DT Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted Channel 1 1.2 60 TJ = 125 °C VGS = 10 V, 7 V, 6 V, 5 V, 4 V VGS = 3 V ID - Drain Current (A) 45 ID - Drain Current (A) 1.0 30 0.8 0.6 TJ = - 55 °C 0.4 15 0.2 TJ = 25 °C 0 0 0.3 0.6 0.9 1.2 0.0 0.0 1.5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 0.016 1800 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1500 0.012 VGS = 4.5 V 0.008 VGS = 10 V 1200 900 600 0.004 Coss 300 Crss 0 0.000 0 15 30 45 60 0 5 ID - Drain Current (A) 10 15 20 VDS - Drain-to-Source Voltage (V) 10 100 10 8 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) ID = 15 A VDS = 10 V 6 VDS = 15 V 4 1 TJ = 25 °C TJ = 150 °C 0.1 0.01 2 0.001 0 0 5 10 15 Qg - Total Gate Charge (nC) 20 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Note Dots and squares represent measured data. Document Number: 65645 S09-2401-Rev. A, 16-Nov-09 www.vishay.com 3 SPICE Device Model SiZ700DT Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted Channel 1 0.030 1.8 ID = 10 A ID = 15 A RDS(on) - On-Resistance (Ω) 0.025 RDS(on) - On-Resistance Normalized 1.5 VGS = 10 V, 4.5 V 1.2 0.9 0.020 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 0.6 - 50 0.000 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Note Dots and squares represent measured data. www.vishay.com 4 Document Number: 65645 S09-2401-Rev. A, 16-Nov-09 SPICE Device Model SiZ700DT Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted Channel 2 1.2 60 TJ = 125 °C 1.0 VGS = 10 V, 7 V, 6 V, 5 V, 4 V, 3 V ID - Drain Current (A) ID - Drain Current (A) 45 30 0.8 0.6 0.4 15 TJ = - 55 °C 0.2 TJ = 25 °C 0 0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 0.010 5000 0.008 4000 0.006 VGS = 4.5 V 0.004 VGS = 10 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 3000 2000 Coss 0.002 1000 0.000 0 Crss 0 15 30 45 60 0 5 ID - Drain Current (A) 10 15 20 VDS - Drain-to-Source Voltage (V) 100 10 10 8 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) ID = 20 A 6 VDS = 10 V 4 VDS = 15 V 1 TJ = 150 °C TJ = 25 °C 0.1 0.01 2 0.001 0 0 11 22 33 Qg - Total Gate Charge (nC) 44 55 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Note Dots and squares represent measured data. Document Number: 65645 S09-2401-Rev. 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