INFINEON IPW50R350CP

IPW50R350CP
CoolMOSTM Power Transistor
Product Summary
Features
• Lowest figure-of-merit R ON x Qg
• Ultra low gate charge
V DS @Tjmax
550
V
R DS(on),max
0.350
Ω
19
nC
Q g,typ
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
TO247-3-1
CoolMOS CP is designed for:
• Hard- & soft switching SMPS topologies
• CCM PFC for Lamp Ballast, LCD & PDP TV
• PWM for Lamp Ballast, LCD & PDP TV
Type
Package
Marking
IPW50R350CP
PG-TO247
5R350P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
10
T C=100 °C
6
Pulsed drain current2)
I D,pulse
T C=25 °C
22
Avalanche energy, single pulse
E AS
I D=3.7 A, V DD=50 V
246
Avalanche energy, repetitive t AR2),3)
E AR
I D=3.7 A, V DD=50 V
0.37
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Mounting torque
Rev. 2.0
Unit
A
mJ
3.7
A
V DS=0...400 V
50
V/ns
static
±20
V
AC (f>1 Hz)
±30
T C=25 °C
89
W
-55 ... 150
°C
M3 and M3.5 screws
page 1
60
Ncm
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
IPW50R350CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
5.6
T C=25 °C
A
22
15
V/ns
Values
Unit
min.
typ.
max.
-
-
1.4
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
500
-
-
V
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.37 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=500 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=500 V, V GS=0 V,
T j=150 °C
-
10
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=5.6 A,
T j=25 °C
-
0.32
0.35
Ω
V GS=10 V, I D=5.6 A,
T j=150 °C
-
0.80
-
f =1 MHz, open drain
-
2.2
-
Gate resistance
Rev. 2.0
RG
page 2
Ω
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
IPW50R350CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1020
-
-
46
-
-
43
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
-
92
-
Turn-on delay time
t d(on)
-
35
-
Rise time
tr
-
14
-
Turn-off delay time
t d(off)
-
80
-
Fall time
tf
-
12
-
Gate to source charge
Q gs
-
4
-
Gate to drain charge
Q gd
-
6
-
Gate charge total
Qg
-
19
25
Gate plateau voltage
V plateau
-
5.2
-
V
-
0.9
1.2
V
-
250
-
ns
-
2.3
-
µC
-
19
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 400 V
V DD=400 V,
V GS=10 V, I D=5.6 A,
R G=30.9 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=5.6 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=5.6 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
I SD≤I D, di /dt ≤400A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low and high side switch
5)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
IPW50R350CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
100
limited by on-state
resistance
80
1 µs
10 µs
101
100 µs
1 ms
I D [A]
P tot [W]
60
10 ms
DC
40
100
20
10-1
0
0
25
50
75
100
125
150
100
175
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z(thJC)=f(tp);
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
30
20 V
10 V
25
Z thJC [K/W]
100
8V
7V
20
0.5
I D [A]
0.2
0.1
6V
15
0.05
10-1
10
0.02
5.5 V
0.01
single pulse
5V
5
4.5 V
10
-2
10-5
0
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 2.0
0
5
10
15
20
V DS [V]
page 4
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
IPW50R350CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
1.6
18
20 V
15
10 V
1.4
8V
10 V
7V
12
6.5 V
6V
R DS(on) [Ω]
I D [A]
5.5 V
9
5V
7V
6V
1.2
5.5 V
1
6
4.5 V
0.8
3
0.6
0
0
5
10
15
0
20
5
10
V DS [V]
15
20
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=5.6 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
0.9
35
25 °C
0.8
30
0.7
25
0.5
20
I D [A]
R DS(on) [Ω]
0.6
0.4
150 °C
15
0.3
98 %
typ
10
0.2
5
0.1
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.0
0
0
2
4
6
8
10
V GS [V]
page 5
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
IPW50R350CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=5.6 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
25 °C, 98%
8
150 °C, 98%
100 V
101
150 °C
25 °C
400 V
I F [A]
V GS [V]
6
4
100
2
10-1
0
0
5
10
15
0
20
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=3.7 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
250
580
560
200
540
E AS [mJ]
V BR(DSS) [V]
150
100
520
500
480
50
460
0
440
25
75
125
175
T j [°C]
Rev. 2.0
-60
-20
20
60
100
140
180
T j [°C]
page 6
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
IPW50R350CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
5
104
4
Ciss
10
3
102
E oss [µJ]
C [pF]
3
Coss
2
101
1
Crss
100
0
0
100
200
300
400
500
V DS [V]
Rev. 2.0
0
100
200
300
400
500
V DS [V]
page 7
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
IPW50R350CP
Definition of diode switching characteristics
Rev. 2.0
page 8
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
IPW50R350CP
PG-TO247 Outline
Rev. 2.0
page 9
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
IPW50R350CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 10
2007-11-07
Please note the new package dimensions arccording to PCN 2009-134-A
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1
New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1
Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01