INFINEON IPB034N06L3G

IPB034N06L3 G
Jf]R
IPI037N06L3 G
IPP037N06L3 G
™
"%&$!"# 3 Power-Transistor
Product Summary
Features
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Package
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Marking
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Maximum ratings, 2 ET W U F? =
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Parameter
Symbol Conditions
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Value
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Unit
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A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
(&1
%
%
,(
.(
%
%
)&*
)&/
*&*
Thermal characteristics
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Electrical characteristics, 2 ET W U F? =
6DD @E96CH:D6 DA64:7:65
Static characteristics
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%
(&)
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V 9I / V =I / T W U
%
)(
)((
K
t6
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A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
)((((
)+((( ]<
%
)/((
*+((
Dynamic characteristics
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%
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%
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%
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%
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%
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%
%
+.(
%
(&1-
)&*
K
%
,,
%
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%
..
%
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V 99 / V =I /
K
Reverse Diode
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II
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A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
1 Power dissipation
2 Drain current
P a\a4S"T 8#
I 94S"T 8 V =I" /
100
160
80
120
60
I D [A]
P tot [W]
200
80
40
40
20
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94S"V 9I T 8 U D 4(
Z [email protected]"t ]#
A2 C2 > 6E6C t ]
A2 C2 > 6E6C
D 4t ]'T
103
100
=
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6
_R`V`aN[PR
XD
(&-
XD
102
XD
(&*
10
1
Z thJC [K/W]
I D [A]
>D
>D
98
(&)
10
-1
(&((&(*
(&()
D:? 8=
6 AF=
D6
100
10-1
10
10-2
-1
10
0
10
1
10
2
V DS [V]
, 6G
10-5
10-4
10-3
10-2
10-1
100
t p [s]
A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94S"V 9I T W U
R 9I"\[#4S"I 9 T W U
A2 C
2 > 6E6C V =I
A2 C2 > 6E6C
V =I
320
/
/
15
/
/
/
/
/
12
240
R DS(on) [m ]
I D [A]
/
160
9
6
/
/
/
80
/
3
)(K
/
0
0
0
1
2
3
4
5
0
50
100
V DS [V]
150
/
200
250
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94S"V =I L
V 9Ih5*hI 9hR 9I"\[#ZNe
g S`4S"I 9 T W U
A2 C
2 > 6E6C T W
320
200
160
240
g fs [S]
I D [A]
120
160
80
80
40
U
U
0
0
0
1
2
3
4
5
, 6G
0
50
100
150
I D [A]
V GS [V]
A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9I"\[#4S"T W I 9 V =I /
V =I"aU#4S"T W V =I4V 9I
A2 C2 > 6E6C
I9
8
2.5
7
2
6
5
V GS(th) [V]
R DS(on) [m ]
X
ZNe
4
af]
1.5
X
1
3
2
0.5
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 4S"V 9I V =I / f ' " K
I <4S"V I9#
A2 C2 > 6E6C
TW
105
103
8V``
10
4
U
102
U U
I F [A]
C [pF]
8\``
103
U 101
8_``
102
101
100
0
20
40
60
V DS [V]
, 6G
0
0.5
1
1.5
2
V SD [V]
A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6I4S"t 6K R =I "
V =I4S"Q TNaR I 9 AF=
D65
A2 C
2 > 6E6C T W"`aN_a#
A2 C2 > 6E6C
V 99
1000
12
/
10
/
100
/
V GS [V]
I AS [A]
8
U
U
6
U
10
4
2
1
0
1
10
100
1000
0
50
100
150
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 7H"9II#4S"T W I 9 > 65
V =I
Qg
V BR(DSS) [V]
60
V T `"aU#
55
Q T "aU#
Q `d
Q T`
50
-60
-20
20
60
100
140
Q g ate
Q TQ
180
T j [°C]
, 6G
A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
PG-TO-220-3
, 6G
A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
PG-TO-262-3 (I²-Pak)
, 6G
A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
PG-TO-263 (D²-Pak)
, 6G
A2 86 IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
, 6G
A2 86