UT54ACS244E*

UT54ACS244E
Octal Buffers & Line Drivers
March 2015
www.aeroflex.com/Logic
Datasheet
FUNCTION TABLE
FEATURES
• Three-state outputs drive bus lines or buffer memory address
registers
1G, 2G
A
Y
L
L
L
L
H
H
H
X
Z
• 0.6μm CRH CMOS Process
•
•
•
•
•
•
OUTPUT
INPUTS
- Latchup immune
High speed
Low power consumption
Wide power supply operating range of 3.0V to 5.5V
LOGIC SYMBOL
Available QML Q or V processes
1G (1)
20-lead flatpack
UT54ACS244E - SMD 5962-96570
DESCRIPTION
The UT54ACS244E is a performance and voltage enhanced
version of the UT54ACS244 non-inverting octal buffers and
line drivers which improve the performance and density of
three-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters.
(6)
(18) 1Y1
(16) 1Y2
(14) 1Y3
1A4 (8)
(12) 1Y4
1A1
(2)
1A2
1A3
(4)
2G (19)
EN
2A2 (13)
2A3 (15)
(9) 2Y1
(7) 2Y2
(5) 2Y3
2A4 (17)
(3) 2Y4
2A1
The device is characterized over full military temperature range
of -55°C to +125°C.
EN
(11)
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC
Publication 617-12.
PINOUT
20-Lead Flatpack
Top View
LOGIC DIAGRAM
1G
1
20
VDD
1A1
2
19
2G
2Y4
3
18
1Y1
1A2
2Y3
4
17
5
16
2A4
1Y2
1A3
6
15
2A3
2Y2
7
14
1Y3
1A4
2Y1
VSS
8
13
9
12
10
11
2A2
1Y4
2A1
1G (1)
1A1 (2)
(18) 1Y1
2A1 (11)
(9) 2Y1
1A2 (4)
(16) 1Y2
2A2 (13)
(7) 2Y2
1A3 (6)
(14) 1Y3
2A3 (15)
(5) 2Y3
(8)
(12) 1Y4
2A4 (17)
(3) 2Y4
1A4
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2G (19)
Aeroflex Microelectronics Solutions - HiRel
OPERATIONAL ENVIRONMENT 1
PARAMETER
LIMIT
UNITS
Total Dose
1.0E6
rads(Si)
SEU Threshold 2
108
MeV-cm2/mg
SEL Threshold
120
MeV-cm2/mg
Neutron Fluence
1.0E14
n/cm2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
-0.3 to 7.0
V
VI/O
Voltage any pin
-0.3 to VDD + 0.3
V
TSTG
Storage Temperature range
-65 to +150
°C
TJ
Maximum junction temperature
+175
°C
TLS
Lead temperature (soldering 5 seconds)
+300
°C
ΘJC
Thermal resistance junction to case
15
°C/W
II
DC input current
±10
mA
PD2
Maximum package power dissipation
3.2
W
permitted @ Tc = +125oC
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
2. Per MIL-STD-883, method 1012.1, Section 3.4.1, PD = (Tj(max) - Tc(max) ) / Θjc
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
3.0 to 5.5
V
VIN
Input voltage any pin
0 to VDD
V
TC
Temperature range
-55 to +125
°C
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DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS244E7
(VDD = 3.0V to 5.5V; VSS = 0V 6, -55°C < TC <+125°C);
SYMBOL
DESCRIPTION
CONDITION
VIL
Low-level input voltage 1
VDD = 3.0V to 5.5V
VIH
High-level input voltage 1
VDD = 3.0V to 5.5V
IIN
Input leakage current
VIN = VDD or VSS
Low-level output voltage 3
IOL = 100μA
VOL
MIN
MAX
UNIT
0.3VDD
V
0.7VDD
-1
V
1
μA
0.25
V
VDD = 3.0V to 5.5V
VOH
High-level output voltage 3
IOH = -100μA
VDD - .025
V
VDD = 3.0V to 5.5V
IOS1
Short-circuit output current 2 ,4
VO = VDD and VSS
-300
+300
mA
-150
+150
mA
VDD from 4.5V to 5.5V
IOS2
Short-circuit output current 2 ,4
VO = VDD and VSS
VDD from 3.0V to 3.6V
IOL1
Low level output current 10
VIN = VDD or VSS
+12
mA
+8
mA
-12
mA
-8
mA
VOL = 0.4V
VDD from 4.5V to 5.5V
IOL2
Low level output current 10
VIN = VDD or VSS
VOL = 0.4V
VDD from 3.0V to 3.6V
IOH1
High level output current 10
VIN = VDD or VSS
VOH = VDD-0.4V
VDD from 4.5V to 5.5V
IOH2
High level output current10
VIN = VDD or VSS
VOH = VDD-0.4V
VDD from 3.0V to 3.6V
IOZ
Ptotal1
Three-state output leakage current
VO = VDD and VSS
Power dissipation2, 8, 9
CL=50pF
-30
30
μA
1.5
mW/
MHz
0.75
mW/
MHz
VDD from 4.5V to 5.5V
Ptotal2
Power dissipation2, 8, 9
CL=50pF
VDD from 3.0V to 3.6V
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IDDQ
Quiescent Supply Current
VIN = VDD or VSS
25
μA
15
pF
15
pF
VDD from 3.6V to 5.5V
CIN
Input capacitance 5
ƒ = 1MHz
VDD = 0V
COUT
Output capacitance 5
ƒ = 1MHz
VDD = 0V
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%, 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density ≤5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/
MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25°C per MIL-STD-883 method 1019 condition
A up to the maximum TID level procured.
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. Guaranteed by characterization, but not tested.
AC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS244E2
(VDD = 3.0V to 5.5V; VSS = 0V 1, -55°C < TC < +125°C);
SYMBOL
tPLH
tPHL
tPZL
tPZH
tPLZ
tPHZ
PARAMETER
Input to Yn
Input to Yn
G low to Yn active
G low to Yn active
G high to Yn three-state
G high to Yn three-state
Condition
VDD
CL = 50pF
4.5V to 5.5V
CL = 50pF
CL = 50pF
CL = 50pF
CL = 50pF
CL = 50pF
MINIMUM
MAXIMUM
UNIT
1
6.5
ns
3.0V to 3.6V
1
9.5
4.5V to 5.5V
1
7.5
3.0V to 3.6V
1
10.5
4.5V to 5.5V
1
6
3.0V to 3.6V
1
8
4.5V to 5.5V
1
7
3.0V to 3.6V
1
9.5
4.5V to 5.5V
1
6
3.0V to 3.6V
1
7.5
4.5V to 5.5V
1
9.5
3.0V to 3.6V
1
11
ns
ns
ns
ns
ns
Notes:
1. Maximum allowable relative shift equals 50mV.
2. For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25°C per MIL-STD-883 method 1019 condition
A up to the maximum TID level procured.
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Packaging
1. All exposed metallized areas are gold plated over
electroplated nickel per MIL-PRF-38535.
2. The lid is electrically connected to VSS.
3. Lead finishes are in accordance with MIL-PRF38535.
4. Dimension symbol is in accordance with MILPRF-38533.
5. Lead position and colanarity are not measured.
Figure 1. 20-lead Flatpack
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Ordering Information: UT54ACS244E: SMD
5962 * ***** ** * * *
Lead Finish: (Notes 1 & 2)
A = Solder
C = Gold
X = Optional
Package Type:
X = 20-lead ceramic bottom-brazed dual-in-line Flatpack
Class Designator:
Q = QML Class Q
V = QML Class V
Device Type:
02 = 1 rad(Si)/sec
03 = 50 to 300 rads(Si)/sec
Drawing Number:
96570 = UT54ACS244E
Total Dose: (Notes 3 & 4)
R = 1E5 rads(Si)
F = 3E5 rads(Si)
G = 5E5 rads(Si)
H = 1E6 rads(Si)
Notes:
1. Lead finish (A,C, or X) must be specified.
2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold).
3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening. For prototype inquiries, contact factory.
4. Device type 02 is only offered with a TID tolerance guarantee of 3E5 rads(Si) or 1E6 rads(Si) and is tested in accordance with MIL-STD-883 Test Method 1019
Condition A and section 3.11.2. Device type 03 is only offered with a TID tolerance guarantee of 1E5 rads(Si), 3E5 rads(Si), and 5E5 rads(Si), and is tested in
accordance with MIL-STD-883 Test Method 1019 Condition A.
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Datasheet Revision History
Revision Date
March 2015
Version 1.0.0
36-00-04-002
Ver. 1.0.0
Description of Change
Initial Release of Datasheet
8
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