Summary of differences between UT1553B/BCRTM and UT1553B/BCRTMB (6/16)

Standard Product
Summary of Differences between
UT1553B/BCRTM and UT1553B/BCRTMB
Application Note
Cobham.com/HiRel
June 10, 2016
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Table 1: Cross Reference of Applicable Products
PRODUCT NAME
BCRTM
BCRTMB
1.0
MANUFACTURER
PART NUMBER
UT1553B/BCRTM
UT1553B/BCRTMB
SMD #
DEVICE TYPE
INTERNAL PIC NUMBER
5962-89577
5962-89577
01
02
UP17L & FB14A
JD15A
Overview
In 2012, Cobham exhausted its inventory of UT1553B/BCRTM product. To minimize the
obsolescence impact on customers, Cobham migrated the product to a new fabrication facility. One
objective in the migration was to maintain FORM, FIT, and FUNCTION with the original product. This
application notes describes the differences between the obsolete and migrated versions.
2.0
Technical Background
The goal of the BCRTMB development was to provide a FORM, FIT, FUNCTIONAL replacement to the
obsolete BCRTM. Differences in the new process resulted in some minor AC and DC electrical
exceptions. The following sections summarize the product differences.
2.1
Technology Differences
Table 2. Technology and Capability Differences
Technical Feature
Fab Process
TID
SEU (no upsets)
SEL (no latch-up)
QML
Package
2.2
UT1553B/
BCRTM
1.5 µm CMOS
1E6 rad(Si)
≤ 27 MeV/mg/cm2
≤ 80 MeV/mg/cm2
Q&V
84-PIN: Ceramic
LCC, PGA, QFP
UT1553B/
BCRTMB
0.6 µm CMOS
None
NA
NA
Q
84-PIN: Ceramic
PGA, QFP
Parametric Differences
Table 3. DC Electrical Parametric Differences
Parameter
High level input voltage, TTL Inputs
Inputs with pull-up resistors (VIN=VDD)
Inputs with pull-up resistors (VIN=VSS)
950009-001
Version 1.0.0
Symbol
VIH
IIN
IIN
UT1553B/BCRTM
(Dev. Type 01)
UT1553B/BCRTMB
(Dev. Type 02)
Affected
Specification
MIN
MAX
MIN
MAX
SMD
2.0
-1
-550
1
-80
2.2
-10
-900
10
-150
X
X
X
1
Data
Sheet
X
X
X
Units
V
µA
µA
Cobham Semiconductor Solutions
Cobham.com/HiRel
Table 4. AC Electrical Parametric Differences
Parameter
Symbol
UT1553B/BCRTM
(Dev. Type 01)
UT1553B/BCRTMB
(Dev. Type 02)
Affected
Specification
MIN
MAX
MIN
MAX
SMD
Data
Sheet
Units
DMACK ↓ to DMAR High Impedance
tSHL1
0
10
-12
10
X
X
ns
DMAG ↓ to DMACK ↓ valid
tPZL2
0
45
-15
45
X
X
ns
TSCTL ↓ to ADDRESS valid
tPZL1
0
40
-15
40
X
X
ns
RWR / RRD ↑ to DMACK ↑
tHLH2
THMC1
+10
THMC2
+5
THMC1
-15
THMC2
-10
THMC1
+20
THMC2
+10
X
X
ns
TSHL1
THMC1
-10
THMC2
-10
X
X
ns
THLZ2
THMC1
-10
THMC1
-10
THMC1
-15
THMC1
+20
X
X
ns
TSHL1
THMC2
-10
THMC2
+5
THMC2
-10
THMC2
+15
X
X
ns
RWR ↓ to DATA valid
TOOZL1
0
30
-5
30
X
X
ns
RWR ↑ to DATA High Impedance
THLZ1
THMC1
-10
THMC1
+10
THMC1
-15
THMC1
+20
X
X
ns
THLZ2
THMC1
-10
THMC1
-10
THMC1
-15
THMC1
+20
X
X
ns
tHLH2
5
50
0
50
X
X
ns
WR ↓ to RWR ↓ High Impedance
tPHL2
0
30
0
35
X
X
ns
STDINTP ↓ to STDINTP ↑
tPW1
320
340
310
340
X
X
ns
8xMCLK
10xMCLK
+40ns
8xMCLK
12xMCLK
+40ns
X
X
µs
ADDRESS valid to RRD ↓
(Address Setup)
RRD ↑ to ADDRESS High
Impedance (ADDRESS Hold)
ADDRESS valid to RWR ↓
(ADDRESS Setup)
(DATA Hold)
RWR ↑ to ADDRESS High
Impedance (ADDRESS Hold)
RD + CS ↑ to DATA High Impedance
(DATA Hold)
DMAG ↓ to STDINTL ↓
3.0
tOOHL2
Summary and Conclusion
Cobham has successfully developed a practical replacement solution to the obsolete
UT1553B/BCRTM. Due to the necessary underlying technology change, some parametric differences
exist. This application note summarizes all parametric deviations from the original specification while
identifying the related technical document (i.e. SMD or DATASHEET) that is affected by the change.
950009-001
Version 1.0.0
2
Cobham Semiconductor Solutions
Cobham.com/HiRel
REVISION HISTORY
Date
Rev.
#
06/10/2016
1.0.0
950009-001
Version 1.0.0
Change Description
Initial Release
Author
TLM
3
Cobham Semiconductor Solutions
Cobham.com/HiRel
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