MSD20N10 N-Channel 100-V (D-S) MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Application • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters Packing & Order Information Part No./ R：2,500/Reel Part No./ T：80/Tube , 4,000/Box Graphic symbol Publication Order Number: [MSD20N10] © Bruckewell Technology Corporation Rev. A -2014 MSD20N10 N-Channel 100-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current (TC=25°C) 11 A IDM Pulsed Drain Current 50 A IS Continuous Source Current (Diode Conduction) 28 mJ PD Power Dissipation (TC=25°C) 50 W TJ,TSTG Operating Junction and Storage Temperature -55 to + 175 °C b Thermal Resistance Characteristics Symbol Parameter RθJC RθJA Maximum Junction-to-Case Maximum Junction-to- Ambient a Typ. Max. -- 3 -- 40 Units °C/W Notes a.Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics b.Pulse width limited by maximum junction temperature Static Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250μA IGSS Gate-Body Leakage Max. Units 3.5 V VDS = 0 V, VGS = 20 V ±100 nA Zero Gate Voltage Drain VDS = 80 V, VGS = 0 V 1 Current VDS = 80 V, VGS = 0 V, TJ = 55°C 25 ID(on) On-State Drain Current VDS = 5 V, VGS = 10 V r Drain-Source VGS = 10 V, ID = 4.5 A 280 On-Resistance VGS = 4.5 V, ID = 4 A 355 gfs Forward Transconductance VGS = 15 V , ID = 4.5 A VSD Diode Forward Voltage IS = 14 A , VGS = 0 V Dynamic Symbol Parameter td(on) Turn-On Time IDSS DS(on) tr Turn-On Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Publication Order Number: [MSD20N10] Test Conditions VDD = 50 V, ID = 4.5 A, RGEN = 6 Ω , RL = 14.3 Ω VGEN = 10 V Min Typ. 1 34 uA A mΩ 5 S 0.95 V Min Typ. Max. Units -- 4.8 -- ns -- 3.9 -- ns -- 12.7 -- ns -- 3.2 -- ns © Bruckewell Technology Corporation Rev. A -2014 MSD20N10 N-Channel 100-V (D-S) MOSFET Dynamic Symbol Parameter Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Rq Gate Resistance Test Conditions VDS = 50 V,ID = 4.5 A, VGS = 4.5 V VDS = 15 V, VGS = 0 V, f = 1.0MHz f = 1.0MHz Min Typ. Max. Units -- 3.8 -- nC -- 1.3 -- nC -- 1.7 -- nC -- 332 -- pF -- 40 -- pF -- 29 -- pF -- 0.3 -- Ω Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Publication Order Number: [MSD20N10] © Bruckewell Technology Corporation Rev. A -2014 MSD20N10 N-Channel 100-V (D-S) MOSFET ■Typical Electrical Characteristics FIG.1-ON REGION VS DRAIN CURRENT FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON-RESISTANCE VS GATE-TO-SOURCE FIG.4-DRAIN-TO-SOURCE FORWARD VOLTAGE VOLTAGE FIG.5-OUTPUT CHARACTERISTICS Publication Order Number: [MSD20N10] FIG.6-CAPACITANCE © Bruckewell Technology Corporation Rev. A -2014 MSD20N10 N-Channel 100-V (D-S) MOSFET ■Typical Electrical Characteristics FIG.7-GATE CHARGE FIG.8-NORMALIZED ON-RESISTANCE VS JUNCTION TEMPERATURE FIG.9-SAFE OPERATING AREA FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT Publication Order Number: [MSD20N10] © Bruckewell Technology Corporation Rev. A -2014 MSD20N10 N-Channel 100-V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSD20N10] © Bruckewell Technology Corporation Rev. A -2014