MSD39N08 30V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 30V, 55A, RDS(ON) =9mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • 100% EAS Guaranteed • RoHS compliant package Applications • MB / VGA / Vcore • POL Applications • SMPS 2nd SR Packing & Order Information Shipping：80/Tube ; 2,500/Box TO-252 Package Graphic symbol Publication Order Number: [MSD39N08] © Bruckewell Technology Corporation Rev. A -2014 MSD39N08 30V N-Channel MOSFETs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V Drain Current - Continuous (TC=25°C) 55 A Drain Current - Continuous (TC=100°C) 35 A ID 220 A 45 mJ 2 30 A 40 W Power Dissipation - Derate above 25°C 0.32 W/°C TJ Operating Junction Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C EAS IAS PD Drain Current - Pulsed 1 2 IDM Single Pulse Avalanche Energy Single Pulse Avalanche Current Power Dissipation (TC=25°C) Thermal Characteristics Symbol Parameter Typ. Max. RΘjA Thermal Resistance Junction to ambient -- 62 RθJC Thermal Resistance Junction to Case -- 3.1 Units °C/W Electrical Characteristics (TJ=25℃, unless otherwise noted) Static State Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA BVDSS Temperature Coefficient Reference to 25°C , ID = 1mA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current RDS(on) Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS = VGS, ID =-250μA △VGS(th) V GS(th) Temperature Coefficient VDS = VGS, ID =-250μA -4 mV/°C gfs Forward Tranconductance VDS = 10 V , ID = 8 A 14 S BVDSS △BVDSS /△TJ Publication Order Number: [MSD39N08] 3 30 V 0.04 V/°C ±100 VDS = 30 V , VGS = 0 V , TJ= 25°C 1 VDS = 24 V , VGS = 0 V , TJ= 125°C 10 VGS = 10 V, ID = 16 A 7.5 9 VGS = 4.5 V , ID = 8 A 10 13 1.6 2.5 1 nA uA mΩ V © Bruckewell Technology Corporation Rev. A -2014 MSD39N08 30V N-Channel MOSFETs Dynamic Characteristics Symbol Parameter Qg Test Conditions Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time 3,4 3,4 Max. Units -- 7.5 -- nC -- 1.3 -- nC -- 4.5 -- nC -- 4.8 -- ns ID = 15 A , RG = 3.3 Ω, -- 12.5 -- ns VGS = 10 V , VDD = 15 V -- 27.6 -- ns -- 8.2 -- ns -- 750 -- pF -- 150 -- pF -- 110 -- pF -- 2.7 -- Ω Min Typ. Max. Units 12 -- -- mJ Min Typ. Max. Units -- -- 55 A -- -- 220 A VDS = 15 V , ID = 20 A, VGS = 4.5 V 3,4 3,4 3,4 3,4 tf Fall Time CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Rg Gate Charge Drain-Source Diode Characteristics Symbol Parameter Single Pulse Avalanche Energy Drain-Source Diode Characteristics Symbol Parameter IS Typ. Total Gate Charge Qgs EAS Min 3,4 Continuous Source Current VDS = 25 V f = 1 MHz , VGS = 0 V VDS = 0 V , f = 1 MHz , VGS = 0 V Test Conditions VDD = 25 V,L = 0.1mH, IAS = 15 A Test Conditions VG = VD = 0 V , Force Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS = 0 V , IS = 1 A , TJ = 25°C -- -- 1 V Trr Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/μs -- -- -- ns Qrr Reverse Recovery Charge TJ=25°C -- -- -- nC Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2.VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25Ω,Starting TJ=25℃. 3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4.Essentially independent of operating temperature. Publication Order Number: [MSD39N08] © Bruckewell Technology Corporation Rev. A -2014 MSD39N08 30V N-Channel MOSFETs ■Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MSD39N08] © Bruckewell Technology Corporation Rev. A -2014 MSD39N08 30V N-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MSD39N08] FIG.8-EAS WAVEFORM © Bruckewell Technology Corporation Rev. A -2014 MSD39N08 30V N-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSD39N08] © Bruckewell Technology Corporation Rev. A -2014