BAS78A...BAS78D Silicon Switching Diodes Switching applications 4 High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78C BAS 78C 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78D BAS 78D 1=A 2=C 3 = n.c. 4 = C SOT223 Maximum Ratings Parameter Symbol BAS BAS BAS BAS 78A 78B 78C 78D Unit Diode reverse voltage VR 50 100 200 400 V Peak reverse voltage VRM 50 100 200 400 Forward current IF 1 Peak forward current IFM 1 Surge forward current, t = 1 s IFS 10 Total power dissipation, TS = 124 °C Ptot 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg A -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 22 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BAS78A...BAS78D Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Breakdown voltage V V(BR) I(BR) = 100 µA BAS78A 50 - - BAS78B 100 - - BAS78C 200 - - BAS78D 400 - - IF = 1 A - - 1.6 IF = 2 A - - 2 IR - - 1 IR - - 50 CD - 10 - pF trr - 1 - µs Forward voltage VF Reverse current µA VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 200mA Test circuit for reverse recovery time DUT tr tp 10% ΙF t t rr ΙF t Oscillograph Ι R = 20 mA 90% EHN00020 VR Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF 2 Aug-20-2001 BAS78A...BAS78D Forward current IF = f (TS ) Forward current IF = f (V F) TA = 25°C 10 1 1200 mA ΙF BAS 78A...D EHB00047 A 1000 10 0 900 IF 800 700 10 -1 600 500 400 10 -2 300 200 100 0 0 15 30 45 60 75 90 105 120 °C 10 -3 150 TS 0 1 V 2 VF Reverse current IR = f (TA) VR = VRmax 10 5 BAS 78A...D EHB00048 nA ΙR 10 max 4 5 10 typ 3 5 10 2 5 10 1 0 50 100 C 150 TA 3 Aug-20-2001