PNP Silicon AF Transistors ● ● ● ● ● BCX 78 BCX 79 High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low frequencies Complementary types: BCX 58, BCX 59 (NPN) 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BCX 78 BCX 78-VII BCX 78-VIII BCX 78-IX BCX 78-X BCX 79 BCX 79-VII BCX 79-VIII BCX 79-IX BCX 79-X – Q62702-C717 Q62702-C626 Q62702-C627 Q62702-C628 Q62702-C629 Q62702-C718 Q62702-C630 Q62702-C631 Q62702-C632 Q62702-C633 C TO-92 1) B E For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCX 78 BCX 79 Maximum Ratings Parameter Symbol BCX 78 Values BCX 79 Unit Collector-emitter voltage VCE0 32 45 Collector-base voltage VCB0 32 45 Emitter-base voltage VEB0 Collector current IC 100 Peak collector current ICM 200 Peak base current IBM 200 Total power dissipation, TC = 70 ˚C Ptot 500 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V 5 mA – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 250 Junction - case1) Rth JC ≤ 160 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 K/W BCX 78 BCX 79 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 32 45 – – – – 32 45 – – – – 5 – – – – – – – – – – 20 20 10 10 DC characteristics Collector-emitter breakdown voltage IC = 2 mA BCX 78 BCX 79 V(BR)CE0 Collector-base breakdown voltage IC = 10 µA BCX 78 BCX 79 V(BR)CB0 Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C ICB0 BCX 78 BCX 79 BCX 78 BCX 79 Collector cutoff current VCB = 32 V, VBE = 0.2 V,TA = 100 ˚C VCB = 45 V, VBE = 0.2 V,TA = 100 ˚C ICE0 Emitter cutoff current VEB = 4 V IEB0 DC current gain IC = 10 µA, VCE = 5 V BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, IC = 2 mA, VCE = 5 V BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, IC = 100 mA, VCE = 1 V1) BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, hFE 1) – – – – 20 20 – – 20 nA – 20 30 40 100 140 200 270 340 – – – – BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X 120 180 250 380 170 250 350 500 220 310 460 630 BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X 40 45 60 60 – – – – – – – – 3 nA nA µA µA µA BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group V BCX 78 BCX 79 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 2.5 mA VCEsat – – 0.6 Base-emitter saturation voltage1) IC = 100 mA, IB = 2.5 mA VBEsat – – 1.0 Base-emitter voltage IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 100 mA, VCE = 1 V 1) VBE(on) – 0.55 – 0.52 0.65 0.93 – 0.75 – 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 4 V BCX 78 BCX 79 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT – 250 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 3 – pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – 10 – Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, h11e – – – – BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 78 VII, BCX 79 VII BCX 78 VIII, BCX 79 VIII BCX 78 IX, BCX 79 IX BCX 78 X, BCX 79 X h12e Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 78 VII, BCX 79 VII BCX 78 VIII, BCX 79 VIII BCX 78 IX, BCX 79 IX BCX 78 X, BCX 79 X h21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 78 VII, BCX 78 VIII, BCX 78 IX, BCX 78 X, h22e F 5 – – – – 1.5 2 2 3 – – – – – – – – – BCX 79 VII BCX 79 VIII BCX 79 IX BCX 79 X 2.7 3.6 4.5 7.5 10– 4 – – – – Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 1 kHz, ∆f = 200 Hz Semiconductor Group kΩ 200 260 330 520 – – – – µS – – – – 18 24 30 50 – – – – – 2 – dB BCX 78 BCX 79 Total power dissipation Ptot = f (TA; TC) Collector current IC = f (VBE) VCE = 5 V Permissible pulse load RthJA = f (tp) Collector cutoff current ICB0 = f (TA) for max. permissible reverse voltage Semiconductor Group 6 BCX 78 BCX 79 DC current gain hFE = f (IC) VCE = 5 V (common emitter configuration) Transition frequency fT = f (IC) VCE = 5 V Collector-emitter saturation voltage IC = f (VCEsat) hFE = 20 Base-emitter saturation voltage IC = f (VBEsat) hFE = 20 Semiconductor Group 7